DIODE C209 Search Results

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.

Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.

C1684 r

Abstract: C1684R C1680 C1685 R transistor
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~

C1681

Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35

C1243

Abstract: C2090
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86

MCA255

Abstract: C1894 C2090 MCA230 MCA231 Quality Technologies optocouplers
Contextual Info: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 PACKAGE db dh .Æ DESCRIPTION r- 6.86 6.3S o The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington

4N35 QUALITY TECHNOLOGIES

Abstract: 4n35 equivalent C1684 r .85 transistor
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. t 6.86

C 1153

Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT210 PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%,

MCA255

Abstract: MCA230 mca231 MCA255 equivalent
Contextual Info: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 DESCRIPTION The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington transistor. The device is supplied in a standard plastic

transistor C2075

Abstract: g10 smd transistor SMD Transistor 1c
Contextual Info: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from

C1303

Abstract: LF 358 C1251 C1298 C2079 C2090 MCT272
Contextual Info: DESCRIPTION PACKAGE DIMENSIONS The MCT272 is a phototransistor-type optically coupled isolator. A gallium arsenide Infrared emitting diode is selectively coupled with an NPN silicon phototransistor. t 6.86 .270 6.35 (.250) _ —•—j ‘ 1 8.89 (.350)

Contextual Info: HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS The H11DX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled

4N25 APPLICATION NOTE

Abstract: 4N25 RFT 100k
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS 1 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS ffc rft cii The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. WWW FEATURES & APPLICATION!

C1685 transistor

Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
Contextual Info: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic

MOC3021 equivalent

Abstract: mcp3020
Contextual Info: m NON-ZERO-CROSSING TRIACS OPTOELECTRONICS II MCP3020 MCP3021 MCP3022 PACKAG E DIMENSIONS DESCRIPTION The MCP3020, MCP3021 and MCP3022 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral switch, which

Contextual Info: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is

Optocoupler IC MCT2E

Abstract: MCT2E equivalent optocoupler mct2e ic MCT2e
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT2E PACKAGE DIMENSIONS t 6.86 DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. r* 6.35 O I W W L-w FEATURES A APPLICATIONS 8.89

c1685

Abstract: C1683 C1680 C1294 C1296A
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT2 ;e DESCRIPTION d im en sio n s The M C T 2 is a N P N silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. ft ft & O FEATURES & APPLICATIONS 8.89 1.78 REF 8.38

C2090

Abstract: MCP3010
Contextual Info: QUALITY TECHNOLOGIES NON-ZERO-CROSSING TRIACS 1 l MCP3009* MCP3010 MCP3011 PACKAGE DIMENSIONS ft ft ft "WWW 8.89 1.78 REF DESCRIPTION The MCP3009, MCP3010 and MCP3011 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon

Contextual Info: QUALITY TECHNOLOGIES • MCT271 The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r f t tSi rSi t 6.86 ww ' 6.35 1 _ 8.89 ■ Controlled Current Transfer Ratio— 45% to 90%