DIODE C100 Search Results

transistor c114

Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Contextual Info: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC

smd zener diode 5v

Abstract: 13.8 8w zener diode transistor 12p smd 12p smd CZRM27C3V6P CZRM27C6V8P CZRM27C7V5P CZRM27C8V2P CZRM27C110P CZRM27C200P
Contextual Info: COMCHIP SMD DIODE SPECIALIST Surface Mount Zener Diode CZRM27C3V6P THRU C200P Features ‘ Low profile surface-mount package ‘ Zener and surge current specification ‘ Low leakage current ‘ Power Dissipation 0.8Watts MINI-SMA 0.161 4.1 0.146(3.7) Excellent stability

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR KB-C100SRW Features ! UNIFORM ! LOW Description LIGHT EMITTING AREA. CURRENT OPERATION. ! EASILY ! FLUSH The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. MOUNTED ON P.C. BOARDS.

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR KB-C100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with LOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. EASILY MOUNTED ON P.C. BOARDS.

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR KB-C100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with LOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. EASILY MOUNTED ON P.C. BOARDS.

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR KB-C100SRW Features SUPER BRIGHT RED Description UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with LOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. EASILY MOUNTED ON P.C. BOARDS.

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SURKW Features Hyper Red Description Uniform light emitting area. The Hyper Red source color devices are made with Al- Low current operation. GaInP on GaAs substrate Light Emitting Diode. Easily mounted on P.C. boards.

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SRW SUPER BRIGHT RED Features Description zUNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with zLOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. zEASILY MOUNTED ON P.C. BOARDS.

Contextual Info: SKB B.C1000L5B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter !"53 !""3 !!"35  4 " ! % & 8&& 6&& %&&& ! 8& %)+ )+& @6& 2 5<= =8&%&&&>+= 5<= =6&%&&&>+=

KB-C100SRD

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SRD SUPER BRIGHT RED Features Description zUNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with zLOW CURRENT OPERATION. Gallium Aluminum Arsenide Red Light Emitting Diode. zEASILY MOUNTED ON P.C. BOARDS.

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation. GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C. boards.

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation. GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C. boards.

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SRW Super Bright Red Features Description z Uniform light emitting area. The Super Bright Red source color devices are made with z Low current operation. Gallium Aluminum Arsenide Red Light Emitting Diode. z Easily mounted on P.C. boards.

Contextual Info: 8.89mmx8.89mm LED LIGHT BAR Part Number: KB-C100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation. GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C. boards.

Contextual Info: Schottky Barrier Diode Twin Diode Wtm OUTLINE Package : FTO-220 SF20SC9 Unit-mm Weight 1.9g Typ 4.5 90V 20A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrs m • 71 [ Æ - J U K • F u ll M o ld e d Rating • High lo R a tlng-S m all-P K G

ATC-C1000-100

Abstract: photodiode free space
Contextual Info: 1,0 W CW Laser Diode Model ATC-C1000-100 Key features Applications • • • • • • • • • • • 1.0 W CW output power 100 µm emitting aperture High efficiency MOCVD InAlGaAs quantum well design High reliability C-mount, ATC and TO-3 packages

Photodiode

Contextual Info: 1 W CW Laser Diode Model ATC-C1000-3800 Key features Applications • • • • • • • • 1 W CW output power 380 µm emitting aperture High efficiency MOCVD InAlGaAs quantum well design High reliability С-mount, ATC and TO-3 packages Medical, ophthalmic and dental application

Contextual Info: □ IX Y S Advanced Technical Information Low VrP/ . IGBT u t s a t with Diode . ISOPLUS247 OES _ _ . ^025 ” 75 A ^ C E (s a t) ” 1-7 V (Electrically Isolated Back Surface) Symbol TestC onditions V v CGR Tj Tj V v GEM ^C25 ^C100 ^CM Maximum Ratings

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

Bz027

Abstract: C510 C82 diode BZD27 c82 004 BZD27-C3V6 BZD27-C7V5 C100 C270 C7V5
Contextual Info: Philips Sem icpnductors DD 2b 72D 52T BBAPX Product specification Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surlace mounted implosion diode SMID glass envelopes. They are intended