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    DIODE BZW Search Results

    DIODE BZW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BZW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DZ800S17K3

    Abstract: FF800R17KE3
    Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data


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    PDF DZ800S17K3 DZ800S17K3 FF800R17KE3

    MOZ 23

    Abstract: DD1000S33HE3 48 H diode
    Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values


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    PDF DD1000S33HE3 MOZ 23 DD1000S33HE3 48 H diode

    DD1000S33

    Abstract: FZ1000R33HE3
    Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values


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    PDF DD1000S33HE3 DD1000S33 FZ1000R33HE3

    DZ800S17K3

    Abstract: No abstract text available
    Text: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit EmCon3 Diode 62mm C-series module with EmCon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values


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    PDF DZ800S17K3 DZ800S17K3

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 100 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung


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    DD B6U 84 N 16 RR

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung


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    Untitled

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 100 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung


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    Untitled

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT DD B6U 84 N 16 RR Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode Periodische Spitzensperrspannung


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    diode

    Abstract: DD400S17K6CB2
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    Untitled

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    diode

    Abstract: DD400S17K6CB2
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    thyristor JD

    Abstract: No abstract text available
    Text: BZW 04-5V8 . BZW 04-376B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter - ? 3 ,   /   Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and


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    PDF 04-5V8 04-376B 04-5V8. 04-376B thyristor JD

    M933

    Abstract: BZW 10 diode cib 34 73
    Text: BZW 06-5V8 . BZW 06-376B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter - ? 3 ,   /   Absolute Maximum Ratings Symbol Conditions Axial lead diode Unidirectional and


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    PDF 06-5V8 06-376B 06-5V8. 06-376B M933 BZW 10 diode cib 34 73

    C67067-A2900-A70

    Abstract: VR25
    Text: BYM 300 A 120 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 120 DN 2 Type VR25 IFDC BYM 300 A 120 DN2 1200V 450A Package Ordering Code


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    PDF C67067-A2900-A70 C67067-A2900-A70 VR25

    200GAR

    Abstract: BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70
    Text: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70


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    PDF BSM300GA120DN2 200GAR C67070-A2301-A70 200GAR BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Transient suppressor diode BZW14 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC01 OR DATA SHEET A double-diffused silicon glass passivated diode in a herm etically sealed axial-leaded glass envelope


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    PDF BZW14 OD-64.

    BZW14 diode

    Abstract: BZW14
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSBTBl QOHbTT'i 070 M A P X BZW14 A TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended for transient suppression in telephony equipment.


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    PDF BZW14 OD-64. 22/iF 7Z89449 BZW14 diode BZW14

    BZW14

    Abstract: No abstract text available
    Text: BZW14 _ FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC01 OR DATA SHEET TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a herm etically sealed axial-leaded glass envelope intended fo r transient suppression in telephony equipment.


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    PDF BZW14 OD-64. BZW14

    sod64 dimensions

    Abstract: No abstract text available
    Text: BZW14 _ FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC01 OR DATA SHEET TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a herm etically sealed axial-leaded glass envelope intended fo r transient suppression in telephony equipment.


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    PDF BZW14 OD-64. sod64 dimensions

    BZW14 diode

    Abstract: BZW14 SOD64
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSB'ìBl DQ2b7'ìcì Q7G * A P X BZW14 TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended fo r transient suppression in telephony equipment.


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    PDF BZW14 OD-64. 40Aim; S20MF bbS3T31 7Z89449 BZW14 diode BZW14 SOD64

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE I> ^ 5 3 ^ 3 1 Q02b7'n Q7Q I IAPX BZW14 TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended fo r transient suppression in telephony equipment.


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    PDF Q02b7 BZW14 OD-64. bbS3T31

    BZW14

    Abstract: diode 1123
    Text: 5bE D m TllDöSb [1040035 m PHILIPS INTERNATIONAL • PHIN BZW14 5bE Bi wmm N T-d- zi M W TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended fo r transient suppression in telephony equipment.


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    PDF BZW14 OD-64. 711002b 711005b T-11-23 BZW14 diode 1123

    BZW14 diode

    Abstract: BZW14 diode SOD 64 suppressor diode
    Text: b3E D m bb53T24 007ÛÛ27 Tbb H S I C 3 BZW14 NAPC/PHILIPS SEMICOND FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC01 OR DATA SHEET TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a herm etically sealed axial-leaded glass envelope


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    PDF bb53T24 007flfl27 BZW14 OD-64. BZW14 diode BZW14 diode SOD 64 suppressor diode

    Untitled

    Abstract: No abstract text available
    Text: BZW03 SERIES A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC01 OR DATA SHEET REGULATOR DIODES Glass passivated diode:; in hermetically sealed axial-leaded glass envelopes. They are intended fo r use as voltage regulator and lr<msient suppressor diode in medium power regulation and transient suppression


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    PDF BZW03 W03-C7V5 BZW03-C510 OD-64.