E81734
Abstract: BYW series BYT16P-400 BYW29G-200 BYW4200B BYW51G-200 BYW77G-200 SMBYW01-200 SMBYW02-200 STPR1020CB
Text: POWER RECTIFIERS ULTRAFAST DIODES SMA SMB SMC D2PAK DPAK SURFACE MOUNT ULTRAFAST RECTIFIERS Voltage max Current 1 Amp 2 Amps 4 Amps 200 Volts 400 Volts 8 Amps 2 x 5 Amps 2 x 8 Amps 2 x 10 Amps 25 Amps 1 Amp 3 Amps 30 Amps Part Number VF (max) (*) @ rated current
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STPR120A
SMBYW01-200
SMBYW02-200
SMBYW04-200
BYW4200B
BYW29G-200
STPR1020CB
STPR1020CG
STPR1620CG
BYW51G-200
E81734
BYW series
BYT16P-400
BYW29G-200
BYW4200B
BYW51G-200
BYW77G-200
SMBYW01-200
SMBYW02-200
STPR1020CB
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BYW77100
Abstract: BYW77-150 BVW77-150 BYW31-100 BYW31-150 BYW31-50 BYW77-100 BYW77-50 UES701 UES702
Text: UES701 BYW31-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 RECTIFIERS High Efficiency, 25 A FEATURES DESCRIPTION • • • • • • Designed to meet the efficiency'dem and of sw itchin g type power supp lies, these devices are useful in m any sw itching
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UES701
UES702
UES703
BYW31-50
BYW77-50
BYW31-100
BYW77-100
BYW31-150
BYW77-150
BYW77100
BYW77-150
BVW77-150
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Untitled
Abstract: No abstract text available
Text: UES701 BYW31-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 RECTIFIERS High Efficiency, 25 A DE S C R IP T IO N Designed to meet the efficiency demand of sw itching type power supplies, these devices are useful in m any sw itching applications.
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UES701
BYW31-50
BYW77-50
UES702
BYW31-100
BYW77-100
UES703
BYW31-150
BYW77-150
UES701
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Diode LT 9250
Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY
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00G2252
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode LT 9250
diode BYW 92
LT 9250
diode lt 0236
5 amp diode byw 92-200
diode BYW 92-200
diodes byw 92
diodes byw
diode BYW 19
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diode BYW 66
Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Text: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T
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diode BYW 92
Abstract: 5 amp diode byw 92 diode BYW 92-200 SA 9259 diode puissance 30 amp BYW 90 diode BYW 66 diodes byw 5 amp diode byw 92-200 rms p2f
Text: S G S- TH OM SO N O STC T H O M D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) S O N - C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH H IG H E F F IC IE N C Y FAST R E C O V E R Y R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT
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0DG2252
7T2C1537
0QQ22S7
diode BYW 92
5 amp diode byw 92
diode BYW 92-200
SA 9259
diode puissance 30 amp
BYW 90
diode BYW 66
diodes byw
5 amp diode byw 92-200
rms p2f
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77150
Abstract: diode BYW 31 200
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF IE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT
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QGGE22Û
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
77150
diode BYW 31 200
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diodes byw 92
Abstract: BYW 200 ZTF 160 thomson diodes diode BYW 92 diode La AV8080 diode BYW 66
Text: STC D 1• 7 ^ 5 3 7 S G S—THOMSON 59C 0 2 2 1 6 D OüüEait. 7 T-*>2~U BYW 08-50-200, R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T SUPERSW ITCH
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BYW08
diodes byw 92
BYW 200
ZTF 160
thomson diodes
diode BYW 92
diode La
AV8080
diode BYW 66
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aval
Abstract: No abstract text available
Text: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
aval
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Diode BYW 56
Abstract: tfk 731 BYW56 BYW 56 V diodes byw BYW 52 TFK 03 diodes diode BYW N5059 DIODE in 5060
Text: m 'W ? BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power rectifier Besondere Merkmale: Features: • Stoßspannungsfest • Controlled avalanche characteristics • Hermetische G laspassivierung
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77150
Abstract: diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSON aCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E FFIC IE N C Y FAST R ECO V ERY R E C TIFIE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT 59C 02228
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PIAVI51
BVW77
77150
diode puissance 30 amp
diode BYW 76
diode BYW 66
BYW 77
high efficiency fast recovery diode byw
diode BYW
BYW 90
22313
diodes byw
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BYW 64 bridge rectifier
Abstract: diode BYW 64
Text: BYW 27-50.BYW 27-1000 Silizium Gleichrichter Silicon Rectifier 1A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung DO-41 Plastic case Kunststoffgehäuse <*-nax. qf 2.6 0.4 Weight approx. Gewicht ca.
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DO-41
UL94V-0
R0D1RS14
000017S
BYW 64 bridge rectifier
diode BYW 64
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Untitled
Abstract: No abstract text available
Text: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T
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OCR Scan
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CB-425)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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PDF
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N5625
Abstract: diodes byw N5624 diodes byw 88 600 r
Text: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW82.
BYW86
N5625
D-74025
24-Jun-98
diodes byw
N5624
diodes byw 88 600 r
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IN5059
Abstract: 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent
Text: Te m ic BYW52.BYW56 T ELEFU NK EN Sem iconductors Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW52.
BYW56
IN5059
BYW53
1N5060
BYW55
1N5062
1n5062 equivalent
diodes byw
Diode BYW 56
BYW 52
BYW 200
1N5060 diode
BYW 54
byw 56 equivalent
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PDF
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diode BYW 85
Abstract: BYW 70 BYW25-800 diode BYW 60
Text: BYW25 SERIES MAINTENANCE TYPE J \_ FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO-5 metal envelopes especially suitable fo r operation as main and com m utating diodes in 3-phase a.c. m otor speed control inverters and in high frequency power
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BYW25
1000R.
7Z78500
BYW25
7Z77891
diode BYW 85
BYW 70
BYW25-800
diode BYW 60
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Diode BYW 56
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli
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bbS3T31
002bb77
BYW54
7Z88032
Diode BYW 56
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diode BYW 200
Abstract: diode BYW 60
Text: Te m ic BYW72.BYW76 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristic Applications Fast rectifier and sw itch for exam ple for T V -lin e
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BYW72.
BYW76
diode BYW 200
diode BYW 60
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PDF
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SYW 55
Abstract: BYW25 BYW25-1000 BYW25-1000R BYW25-800 BYW25-800R LF35
Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE SSE D • bbS3*J31 0055733 T ■ B Y W ü b C s th u tio r-os-/9 F A S T S O F T - R E C O V E R Y R E C T IF IE R D IO D E S Fast soft-recovery diodes in DO-5 metal envelopes especially suitable fo r operation as main and
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btS3T31
BYW25-800
BYW25-1000.
BYW25-800R
BYW25-1000R.
BYW25â
T-03-19
7z77891
BYW25
SYW 55
BYW25-1000
BYW25-1000R
LF35
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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diodes byw
Abstract: No abstract text available
Text: Temic BYW82.BYW86 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • L ow reverse current • H igh surge current loading • E lectrically equivalent diodes:
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BYW82.
BYW86
1N5624
1N5625
12-Dec-94
diodes byw
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PDF
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silicon diode byw 60
Abstract: byw 36 v diode BYW 60
Text: Te m ic BYW32.BYW36 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • Glass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristic Applications Fast rectifier and switch for exam ple for T V -lin e
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BYW32.
BYW36
silicon diode byw 60
byw 36 v
diode BYW 60
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diode BYW 64
Abstract: No abstract text available
Text: ^ EMIC BYW82.BYW86 T EL E FU N K E N Sem iconductors Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Controlled avalanche characteristics • L ow reverse current • High surge current loading • Electrically equivalent diodes:
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BYW82.
BYW86
1N5625
diode BYW 64
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marking 3t1
Abstract: BYW54 88034 BYW55 BYW56
Text: N AMER P H I L I P S / D I S C R E T E bTE ]> • b b S B 'm QGBbb? 5ET ■ APX BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES D ouble-diffused glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes, capable o f absorbing reverse transients.
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bbS3131
0GBbb77
BYW54
OD-57.
BYW55
BYW56
7Z88032
marking 3t1
88034
BYW56
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