diode byw 81 200
Abstract: Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F
Text: S G S-THOMSQN : SIC D THOMSON*CSF o DIVISION SEMICONOUCTÏURS DISCRETS TTETEB? QGQEEMt. BYW 81-50—200, R BYW 81-150 A . (R) SUPERSWITCH HIGH E FF IC IE N C Y FA ST R EC O V ERY R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY
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Iat100Â
diode byw 81 200
Diode BYW 59
Diode BYW 56
diode BYW 66
Q002
ANTENA
8150 diode
diode BYW
diode BYW 81
diode P2F
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Diode LT 9250
Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY
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00G2252
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode LT 9250
diode BYW 92
LT 9250
diode lt 0236
5 amp diode byw 92-200
diode BYW 92-200
diodes byw 92
diodes byw
diode BYW 19
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diode BYW 66
Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Text: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T
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diode BYW 92
Abstract: 5 amp diode byw 92 diode BYW 92-200 SA 9259 diode puissance 30 amp BYW 90 diode BYW 66 diodes byw 5 amp diode byw 92-200 rms p2f
Text: S G S- TH OM SO N O STC T H O M D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) S O N - C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH H IG H E F F IC IE N C Y FAST R E C O V E R Y R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT
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0DG2252
7T2C1537
0QQ22S7
diode BYW 92
5 amp diode byw 92
diode BYW 92-200
SA 9259
diode puissance 30 amp
BYW 90
diode BYW 66
diodes byw
5 amp diode byw 92-200
rms p2f
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PDF
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77150
Abstract: diode BYW 31 200
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF IE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT
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QGGE22Û
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
77150
diode BYW 31 200
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BYW 90
Abstract: l200c 1200C dioda ZTF 160 soae
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A, (R) 1H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT D T 'ô 3 ~ Z I 59C 022 HIGH EFFICIENCY SUPERSWITCH
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I71H1237
BYW 90
l200c
1200C
dioda
ZTF 160
soae
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PDF
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diodes byw 92
Abstract: BYW 200 ZTF 160 thomson diodes diode BYW 92 diode La AV8080 diode BYW 66
Text: STC D 1• 7 ^ 5 3 7 S G S—THOMSON 59C 0 2 2 1 6 D OüüEait. 7 T-*>2~U BYW 08-50-200, R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T SUPERSW ITCH
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BYW08
diodes byw 92
BYW 200
ZTF 160
thomson diodes
diode BYW 92
diode La
AV8080
diode BYW 66
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aval
Abstract: No abstract text available
Text: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
aval
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Diode BYW 56
Abstract: 0224S diode BYW 19 2791T byw+36+v
Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH
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1200C
REDRE08
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode BYW 56
0224S
diode BYW 19
2791T
byw+36+v
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PDF
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77150
Abstract: diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSON aCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E FFIC IE N C Y FAST R ECO V ERY R E C TIFIE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT 59C 02228
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PIAVI51
BVW77
77150
diode puissance 30 amp
diode BYW 76
diode BYW 66
BYW 77
high efficiency fast recovery diode byw
diode BYW
BYW 90
22313
diodes byw
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PDF
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111EF
Abstract: BYW 200 diodes byw 78 100 T03A diode BYW 66 78150
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A , (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 022 D T 'ô 3 ~ Z I HIGH EFFICIENCY V SUPERSWITCH
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CB-425)
CB-262)
CB-262
QDD53t
CB-19)
CB-428)
CB-244
111EF
BYW 200
diodes byw 78 100
T03A
diode BYW 66
78150
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PDF
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Untitled
Abstract: No abstract text available
Text: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T
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CB-425)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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PDF
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N5625
Abstract: diodes byw N5624 diodes byw 88 600 r
Text: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW82.
BYW86
N5625
D-74025
24-Jun-98
diodes byw
N5624
diodes byw 88 600 r
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N5062
Abstract: Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r N5059
Text: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:
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BYW52.
BYW56
N5059
N5060
N5061
N5062
D-74025
24-Jun-98
N5062
Diode BYW 56
TELEFUNKEN BYW-56
N-5061
diodes byw
diodes byw 88 600 r
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LR8C
Abstract: BYW29 T0220AB BYW29 diode rectifier
Text: PHILIPS INTERNATIONAL « E , B 7ll062b 0021 S03 T m p m H T~Q3~ 7 D ata sh eet sta tu s Preliminary specification date of issu e February 1991 GENERAL DESCRIPTION G la ss passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low
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711DfiSb
T0220AB
BYW29E-100/150/200
T0220AC;
T0220
LR8C
BYW29
T0220AB
BYW29 diode rectifier
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PDF
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diode BYW 85
Abstract: BYW 70 BYW25-800 diode BYW 60
Text: BYW25 SERIES MAINTENANCE TYPE J \_ FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO-5 metal envelopes especially suitable fo r operation as main and com m utating diodes in 3-phase a.c. m otor speed control inverters and in high frequency power
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BYW25
1000R.
7Z78500
BYW25
7Z77891
diode BYW 85
BYW 70
BYW25-800
diode BYW 60
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Diode BYW 56
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli
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bbS3T31
002bb77
BYW54
7Z88032
Diode BYW 56
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SYW 55
Abstract: BYW25 BYW25-1000 BYW25-1000R BYW25-800 BYW25-800R LF35
Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE SSE D • bbS3*J31 0055733 T ■ B Y W ü b C s th u tio r-os-/9 F A S T S O F T - R E C O V E R Y R E C T IF IE R D IO D E S Fast soft-recovery diodes in DO-5 metal envelopes especially suitable fo r operation as main and
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btS3T31
BYW25-800
BYW25-1000.
BYW25-800R
BYW25-1000R.
BYW25â
T-03-19
7z77891
BYW25
SYW 55
BYW25-1000
BYW25-1000R
LF35
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PDF
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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marking 3t1
Abstract: BYW54 88034 BYW55 BYW56
Text: N AMER P H I L I P S / D I S C R E T E bTE ]> • b b S B 'm QGBbb? 5ET ■ APX BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES D ouble-diffused glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes, capable o f absorbing reverse transients.
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bbS3131
0GBbb77
BYW54
OD-57.
BYW55
BYW56
7Z88032
marking 3t1
88034
BYW56
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PDF
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fast diode byw 98 200
Abstract: silicon diode byw 60
Text: BYW72.BYW76 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications 94 9588 Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut
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BYW72.
BYW76
D-74025
24-Jun-98
fast diode byw 98 200
silicon diode byw 60
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PDF
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diode BYW 91
Abstract: byw 98 100 fast diode byw 98 200 fast diode byw 98 100
Text: BYW32.BYW36 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut
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BYW32.
BYW36
D-74025
24-Jun-98
diode BYW 91
byw 98 100
fast diode byw 98 200
fast diode byw 98 100
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PDF
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T0247
Abstract: BYW99P-200 BYW99PI-200 BYW99W-200
Text: S G S - T H O M S O N M M E L E @ ÌT [^ G M © i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES P R E L IM IN A R Y D A T A S H E E T FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES
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BYW99P/PI/W
T0247
BYW99P-200
BYW99PI-200
T0247
BYW99W-200
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PDF
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T0247
Abstract: T0247 package BYW99P-200 BYW99PI-200 BYW99W-200 BYW99W200 1MH7 33ili
Text: S G S -T H O M S O N M M ELE@ ÌT[^ GM ©i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES PR ELIM IN A R Y DATASHEET FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY
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BYW99P/PI/W
T0247
BYW99P-200
BYW99PI-200
T0247
BYW99W-200
T0247 package
BYW99P-200
BYW99PI-200
BYW99W-200
BYW99W200
1MH7
33ili
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PDF
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