MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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BY 255 diode
Abstract: DIODE BY 255 rectifier diode do-201 diode do-201
Text: BY 251.BY 255 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V
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DO-201
MIL-STD-750
BY 255 diode
DIODE BY 255
rectifier diode do-201
diode do-201
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Untitled
Abstract: No abstract text available
Text: TVS Diode Axial Leaded – 30000W > 30KPA series 30KPA Series RoHS Description Uni-directional The 30KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
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0000W
30KPA
E230531
0000W
30KPAxxxXX
30KPAxxxXX-B
RS-296E
DM-0016
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Diode P600 equivalent
Abstract: No abstract text available
Text: TVS Diode Axial Leaded – 15000W > 15KPA series 15KPA Series RoHS Description The 15KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Uni-directional
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5000W
15KPA
E128662/E230531
to150
15KPAxxxXX
15KPAxxxXX-B
RS-296E
DM-0016
Diode P600 equivalent
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PDF
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DO213-AB color band
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. MIL-PRF-19500/115L 5 July 2006 SUPERSEDING MIL-PRF-19500/115K 16 August 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES
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MIL-PRF-19500/115L
MIL-PRF-19500/115K
1N3821A
1N3828A,
1N3016B
1N3051B,
1N3821A-1
1N3828A-1,
1N3016B-1
1N3051B-1,
DO213-AB color band
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PDF
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Untitled
Abstract: No abstract text available
Text: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: A-405R-1 Series Product #: Axial OJ Diode Issue Date: Sep 1 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive
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2002/95/EC
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PVI1050
Abstract: PVI5050 PVI5080
Text: Replaced by PVI-N Data Sheet No. PD 10029-G Series PVI Photovoltaic Isolator 5-10 Volt Output General Description Features The PVI Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a DC input signal. The input of the PVI is a light-emitting diode
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10029-G
PVI1050
1200VDC
PVI5050
PVI5080
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Untitled
Abstract: No abstract text available
Text: Bulletin I27117 rev. C 03/02 SERIES IRK.136, .142, .162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR NEW INT-A-pak Power Modules Features 135 A 140 A 160 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package
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I27117
E78996
08-Mar-07
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ge 142
Abstract: IRK E78996 701819-303ac I27900 irkt 40
Text: Bulletin I27117 rev. C 03/02 SERIES IRK.136, .142, .162 THYRISTOR/DIODE and THYRISTOR/THYRISTOR NEW INT-A-pak Power Modules Features 135 A 140 A 160 A High Voltage Electrically Isolated by DBC Ceramic Al 2 O 3 3500 V RMS Isolating Voltage Industrial Standard Package
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I27117
E78996
ge 142
IRK E78996 701819-303ac
I27900
irkt 40
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PDF
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Untitled
Abstract: No abstract text available
Text: X9522 Laser Diode Control for Fiber Optic Modules Data Sheet January 3, 2006 Triple DCP, Dual Voltage Monitors FN8208.1 DESCRIPTION The X9522 combines three Digitally Controlled Potentiometers DCPs , and two programmable voltage monitor inputs with software and hardware indicators. All functions of the X9522 are accessed by an industry standard
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X9522
FN8208
X9522
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Untitled
Abstract: No abstract text available
Text: ICP Test Report Certification Packet Company name: Suzhou Good-Ark Electronics Co.,Ltd. Product Series: DO-15DO-41、DO-201AD、R-3、R-6 Series Product #: Axial OJ Diode Issue Date: Sep 1 , 2012 It is hereby certified by Suzhou Goodark Electronics CO.,Ltd. that there is neither RoHS EU Directive
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DO-15ã
DO-41ã
DO-201ADã
2002/95/EC
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PDF
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R1240N001
Abstract: R1240K003 R1240X
Text: R1240x Series 1.2A∗ 30V Input PWM Step-down DC/DC Converter The R1240x Series are 30V input, CMOS-based PWM step-down DC/DC converters featuring 1.2A∗ output current. R1240x includes a soft start circuit and latch or fold-back protection circuit. By simply using an inductor, resistors, a diode, and capacitors as external
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R1240x
EK-190-100113
R1240N001
R1240K003
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Untitled
Abstract: No abstract text available
Text: R1243x Series 2A∗ 30V Input PWM Step-down DC/DC Converter The R1243x Series are 30V input, CMOS-based PWM step-down DC/DC converters featuring 2A∗ output current. R1243x includes a soft start circuit and a latch or fold-back protection circuit. By simply using an inductor, resistors, a diode, and capacitors as external
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R1243x
R1243x
Room403,
Room109,
10F-1,
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Untitled
Abstract: No abstract text available
Text: R1240x Series 1.2A∗ 30V Input PWM Step-down DC/DC Converter The R1240x Series are 30V input, CMOS-based PWM step-down DC/DC converters featuring 1.2A∗ output current. R1240x includes a soft start circuit and latch or fold-back protection circuit. By simply using an inductor, resistors, a diode, and capacitors as external
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R1240x
Room403,
Room109,
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PDF
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JK thyristor
Abstract: No abstract text available
Text: SEMiX 252GB126HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT . * 1 . ')0 * 145 ()*-
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252GB126HDs
JK thyristor
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IRFR9012
Abstract: No abstract text available
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling
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IRFR010,
SiHFR010
2002/95/EC
11-Mar-11
IRFR9012
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SiHFU014
Abstract: IRFR014 S10 diode IRFU014 SiHFR014 SiHFR014-E3
Text: IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014)
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IRFR014,
IRFU014,
SiHFR014
SiHFU014
O-252)
2002/95/EC
IRFR014
S10 diode
IRFU014
SiHFR014-E3
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IRFR9110
Abstract: IRFU9110 SiHFR9110 SiHFR9110-E3
Text: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DPAK (TO-252) IPAK
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IRFR9110,
IRFU9110,
SiHFR9110
SiHFU9110
O-252)
O-251)
IRFR9110/SiHFR9110)
IRFU9110/SiHFU9110)
18-Jul-08
IRFR9110
IRFU9110
SiHFR9110-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMiX 252GB176HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - * + 0 - '* + 045 )*+,
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252GB176HDs
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irfuc20
Abstract: IRFRC20PBF IRFRC20 SiHFRC20 SiHFRC20-E3 SiHFUC20 IRFRC20TRLPBF IRFRC20TRPBF
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
O-252)
O-251)
irfuc20
IRFRC20PBF
IRFRC20
SiHFRC20-E3
IRFRC20TRLPBF
IRFRC20TRPBF
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Untitled
Abstract: No abstract text available
Text: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DPAK (TO-252) IPAK
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IRFR9110,
IRFU9110,
SiHFR9110
SiHFU9110
O-252)
O-251)
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) (Ω) VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFR9120,
IRFU9120,
SiHFR9120
SiHFU9120
O-252)
O-251)
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK (TO-252) IPAK (TO-251) • • • • • •
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IRFR9220,
IRFU9220,
SiHFR9220
SiHFU9220
IRFR9220/SiHFR9220)
IRFUFU9220/SiHFU9220)
O-252)
O-251)
12-Mar-07
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PDF
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IRFR9220
Abstract: SiHFU9220 irfu9220 SiHFR9220 SiHFR9220-E3
Text: IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single S DPAK (TO-252) IPAK (TO-251) Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFR9220,
IRFU9220,
SiHFR9220
SiHFU9220
O-252)
O-251)
IRFUFU9220,
IRFR9220
irfu9220
SiHFR9220-E3
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