DIODE BY 1600 RECTIFIER Search Results

Contextual Info: BY 1600.BY 2000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Standard silicon rectifier diodes BY 1600.BY 2000 Forward Current: 3 A

Contextual Info: BY 1600.BY 2000 *0 Axial lead diode Standard silicon rectifier diodes BY 1600.BY 2000 Forward Current: 3 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$'

diode BY 1600 rectifier

Abstract: diode 1600 rectifier
Contextual Info: BY 1600.BY 2000 *0 Axial lead diode Standard silicon rectifier diodes BY 1600.BY 2000 Forward Current: 3 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$'

Contextual Info: BY 1600.BY 2000 *0 Axial lead diode Standard silicon rectifier diodes BY 1600.BY 2000 Forward Current: 3 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$'

Contextual Info: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads

9V bridge rectifier ic

Abstract: 60-16NO1 ixys vub 70 -16
Contextual Info: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads

siemens igbt

Abstract: dc43a
Contextual Info: VUB 71 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 71-12 NO1 VUB 71-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads

51-12NO1

Abstract: vub 70
Contextual Info: VUB 51 VRRM = 1200-1600 V IdAV = 51 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM 1 2 Type 4 5 V VUB 51-12 NO1 VUB 51-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads

DMA150E1600NA

Abstract: DMA-150 DIN7985 din 7985
Contextual Info: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number DMA 150 E 1600 NA 1 3 2 4 Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DMA150E1600NA

Contextual Info: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number 1 3 2 4 Backside: Isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline rCu base plate internal DCB isolated

skt 450

Abstract: semikron thyristor skt 16 diode skn 5/ 08 semikron Semikron SKN 12 /16 diode zg 21 SKR TABL 3,5 QU Semikron SKR 40 /12 TABL14 SKT-GSW semikron skt 600
Contextual Info: Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips Types 3 VRRM 100 4) SKN SKR

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

full bridge igbt induction heating generator

Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Contextual Info: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets

diode SKN molybdenum

Contextual Info: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3

DIODE MARKING code GM

Abstract: DSI45-16A DSI45-16AR DSI45 DSI45-08A DSI45-12A ISOPLUS247
Contextual Info: DSI45-16A final for release V RRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 45 A 1.23 V Part number DSI45-16A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

Contextual Info: DSI45-16A final for release V RRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 45 A 1.23 V Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase bridge configurations

GTO hvdc thyristor

Abstract: welding rectifier circuit board thyristor ltt 1590A single phase fully controlled rectifier scr control circuit for welding disc thyristor IGCT high single phase bridge rectifier pin configuration single phase bridge fully controlled rectifier
Contextual Info: Product Information Main Features Thyristors & Diodes • ■ ■ ■ BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up to several giga watts. Besides the standard phase thyristors and rectifier diodes, our

Contextual Info: DSP45-16A VRRM = 1600 V I FAV = 2x 45 A VF = 1.23 V Standard Rectifier Phase leg Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase bridge configurations

welding rectifier circuit board

Abstract: GTO hvdc thyristor SCR GTO three phase fully controlled rectifier scr control circuit for welding single phase fully controlled rectifier TT 2240 TDB6HK IGCT thyristor tt 330
Contextual Info: Product Information May 2006 Overview Bridge Rectifier, AC-Switches Product Information May 2006 Thyristors & Diodes 3000 VRRM[V] 2000 BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up

thyristor MTT 25 N 14

Abstract: E72873 13-14N02 ls 7472 25-16N02 vuo 35-12n07 36-16io1 VHF15-16 50-04N03 mtt 95 a 12 n
Contextual Info: e I Rectifier Bridges, 1~ ki L-n — —N— Rectifier Bridges, 1 ~ with DCB-Ceram ic Base V *BMS 'd *v @ T c Type *F3U 45°C 10 ms A Vto rF ^VJM V »c K/W 85 220 0.85 m il 17 150 5.6 K/W 0.4 § E 72 873 (M) > New V VBO 13-16N02 • VBO 13-14N02 VBO 13-12N02

DSP45-12A

Abstract: DSP45-16A DSP45-16AR ISOPLUS247
Contextual Info: DSP45-16A VRRM = 1600 V I FAV = 2x 45 A VF = 1.23 V Standard Rectifier Phase leg Part number 1 2 3 DSP45-16A Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

BYD11

Abstract: BYD11D sod91 Philips 037 philips 037 01 ScansUX40
Contextual Info: 5bE D vnoaati GD40S37 o n m p h in BYD11 SERIES PHILIPS INTERNATIONAL SbE » CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded SOD-91 ID * envelope, intended for general purpose rectifier applications.

80EPS16

Contextual Info: 80EPS16 High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A DESCRIPTION/FEATURES Base cathode 4, 2 TO-247AC 1 Anode 3 Anode PRODUCT SUMMARY VF at 80 A 1.17 V IFSM 1450 A VRRM 1600 V The 80EPS16 rectifier High Voltage Series has been

80EPS16

Contextual Info: 80EPS16 High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A DESCRIPTION/FEATURES Base cathode 4, 2 TO-247AC 1 Anode 3 Anode PRODUCT SUMMARY VF at 80 A 1.17 V IFSM 1450 A VRRM 1600 V The 80EPS16 rectifier High Voltage Series has been