DIODE BY 129 Search Results

anzac switches

Abstract: anzac SIGNAL PATH designer designers handbook
Contextual Info: PIN DIODE RF SWITCHES INTRODUCTION PIN diode RF switches are devices which control the path of RF signals through transm ission line media. The switching is performed by biased PIN diodes in the RF path and is totally solid state in operation. PIN diode RF switches are typically used in small

AK2573A

Abstract: AK2573AVB C101 620CH
Contextual Info: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)

marking code C15

Abstract: AK2574 AK2574VB R132 R133
Contextual Info: ASAHI KASEI [AK2574] AK2574 156M Laser Diode Driver + APC for Burst Mode Features - 156M Laser Diode Driver for burst mode application - BIAS current switching - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor APC_FF

CMPD914

Abstract: diode By 129
Contextual Info: Central CMPD914 TM Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

TA 1319 AP

Abstract: ML725B11F-05 ML725B11F-07
Contextual Info: MITSUBISHI ELECTRIC CORPORATION SPECIFICATION PREPARED BY: M. Yamada CHECKED BY: K.Mori APPROVED BY: S.Minamihara DATE: Nov. 8. En g l i s h v e r s io n o n l y ‘01 1.TYPE : ML725BllF-04,05,06,07 2.APPLICATION : Optcal Fiber Communication 3.STRUCTURE : InGaAsP/InP DFB LASER DIODE

mouse Phototransistor

Abstract: LBR-129
Contextual Info: Reflective Object Sensor Model No: LBR-129 Description The LBR-129 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IRED

MC68HC705J1A

Abstract: AN1238 HC05 Application Note AN1238
Contextual Info: Order this document by AN1238/D Freescale Semiconductor AN1238 HC05 MCU LED Drive Techniques Using the MC68HC705J1A Freescale Semiconductor, Inc. By David Yoder CSIC Applications INTRODUCTION This application note demonstrates how the high-current sink pins of an MC68HC705J1A drive a lightemitting diode LED directly without requiring an external amplifying transistor.

Contextual Info: Central” CMPD914 Sem iconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL S E M IC O N D U C T O R CM PD 914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

CMPD914

Contextual Info: Central CMPD914 TM Sem i c o n d u c t o r C o r p . HIGH SPEED SWITCHING DIODE DESCRIPTION The C ENTRAL S E M IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface

CMPD914

Abstract: CMPD914 diode
Contextual Info: Central C M P D 914 S em ico ndu cto r Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION The CENTRAL S E M IC O N D U C TO R CMPD914 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed

Contextual Info: TVS Diode Axial Leaded – 30000W > 30KPA series 30KPA Series RoHS Description Uni-directional The 30KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

650nm 5mw laser

Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
Contextual Info: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |

1N7037

Abstract: 1N7043 1N7043CAT1 1N7043CCT1 15CLQ100 1N7037CCU1 Schottky jans
Contextual Info: INCH-POUND MIL-PRF-19500/730 6 September 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments

Contextual Info: TVS Diode Axial Leaded – 3000W > 3KP series 3KP Series RoHS Description Uni-directional The 3KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Bi-directional

103A

Abstract: TP801C06
Contextual Info: TP801C06 5A M Outline Drawing SCHOTTKY BARRIER DIODE • Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

AK2572

Abstract: QFN28 ASAHI KASEI L 817
Contextual Info: ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES OUTLINES •Temperature compensation programming function APC_FF of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip temperature sensor.

mps 7530

Abstract: MOC2A60-5 MOC2A60 RS-443 1000C IEEE472
Contextual Info: MOTOROLA SEMICONDUCTOR m a TECHNICAL Order this document by MOC2A60-10/D DATA MOC2A60=I O MOC2A60=5* POWER OPTOTMIsolator 2 Amp Zero-Cross Triac Output ‘Motorola Preferred Device This device consists of a gallium arsenide infrared emitting diode optically coupled to

TRIAC RCA

Abstract: TRIAC 226 b trailing SCHEMATIC dimmer motorola triac driver 2 amp triac driver opto 180 watts arc lamp driver MOV150 motorola 715 triac W117 MOC2R60
Contextual Info: MOTOROLA Order this document by MOC2R60–10/D SEMICONDUCTOR TECHNICAL DATA Advance Information MOC2R60-10 * MOC2R60-15 POWER OPTO Isolator 2 Amp RandomĆPhase Triac Output *Motorola Preferred Devices This device consists of a gallium arsenide infrared emitting diode optically coupled

SCHOTTKY DIODE 10A 0.35V

Contextual Info:  APPLICATION NOTE LOW FORWARD VOLTAGE SCHOTTKY DIODE B.Rivet INTRODUCTION In power supplies, the major portion of power losses is due to output rectifiers. The impact of these losses on the efficiency can be expressed by : η= η VF IOUT VOUT VF(IOUT)

Contextual Info: ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES OUTLINES Temperature compensation programming function APC_FF of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip temperature sensor.

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2006. INCH-POUND MIL-PRF-19500/117P 25 July 2006 SUPERSEDING MIL-PRF-19500/117N 6 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

1N823-1

Abstract: 1N821-1 JANTX 1N821-1 1N821UR-1 1N823UR-1 1N825-1 1N825UR-1 1N827-1 1N827UR-1 1N829-1
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 May 2009. MIL-PRF-19500/159P 4 February 2009 SUPERSEDING MIL-PRF-19500/159N 1 APRIL 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED,

melf ZENER diode COLOR CODE

Abstract: 1N747A1 JANTX melf zener diodes color code 1N758A 1N746A-1 melf ZENER diode COLOR BAND 1N759A JANTXV 1N4372AUR-1 1N746AUR-1 1N759AUR-1
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 August 2010. INCH-POUND MIL-PRF-19500/127V 18 May 2010 SUPERSEDING MIL-PRF-19500/127U 2 September 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,