DIODE BY 1200 Search Results

808 nm 1000 mw 2 pins

Abstract: Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw
Contextual Info: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.

SLD300

Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
Contextual Info: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.

808 nm 100 mw

Abstract: SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.

ultrafast igbt

Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Contextual Info: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching

PG124S15

Contextual Info: PG124S15 10A (1500V / 10A ) Outline drawings, mm Fast recovery diode Ø3 _ 0,3 15.5+ 0.3 _ 0.3 5.5 + _ 0.3 3.5 + Applications _ 0.3 11 + _ 0.3 2+ 20min. Damper diode for high definition TV and high resolution display Insulated package by fully molding High voltage by mesa design

laser 790 nm sony 8 mw

Contextual Info: SONY SLD323V High Power Density 1W Laser Diode Description The SLD 323V is a high power, gain-guided laser diode produced by M O C V D method*1. Com pared to the SLD 300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by Q W -SC H structure*2.

A546

Abstract: ERE42M-15 T-100X
Contextual Info: ERE42M -15I5A FAST RECOVERY DIODE Features Damper diode for high definition high resolution display. TV and Insulated package by fully m o l d in g . Connection Diagram High voltage by mesa design. • f t f lt f ld i . High reliability 1 Applications High speed switching.

ERE42M-15

Contextual Info: ERE42M -15I5A FAST RECO VERY DIODE Features Damper diode for high definition high resolution display. TV and Insulated package by fully m o l d in g . Connection Diagram High voltage by mesa design. • f t f lt f ld i . High reliability 1 Applications High speed switching.

8kv DIODE

Abstract: marking 724G ITS 724G vx marking sot23-6 SP724AHTG
Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP724 Series SP724 Series 3pF 8kV Diode Array RoHS Pb GREEN Description The SP724 is comprised of bipolar SCR/diode structures to protect up to four independent lines by clamping

1090D

Abstract: 1000mW laser SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

808 nm 1000 mw

Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: AN4505 AN4506 Calculation of major IGBT operating parameters
Contextual Info: AN4504 Application Note AN4504 IGBT Ratings And Characteristics Application Note Replaces September 2000 version, AN4504-3.0 Load AN4504-3.1 July 2002 PNP VD applications this diode acts as a free-wheeling diode or as a protection diode. Fig. 2 illustrates the packages used by Dynex

SLD323XT

Abstract: 1000mW laser SLD300 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
Contextual Info: SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number

Contextual Info: DISC T Y P E DIODE SDF4000BA SD F4000BA rectification. is a Flat Pack Diode designed for high power • If av>— 4000A, Vrrm— 1200V • High Reliability by pressure mount construction. (Applications • High Power Rectifier • Welding Power Supply • Maximum Ratings

Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 11-Oct.-2005 Nov.-18-2008 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number

Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R E I.Umezaki M.Yamamoto V Nov.-18-2008 Nov.14.2002 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number RM1800HE-34S

diode UF 2010

Abstract: diode 2200
Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 27-Sep.-2006 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DG-66S

Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 27-Sep.-2006 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DG-66S

MGW12N120D

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

MGY40N60D

Abstract: motorola 6810
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

Contextual Info: Technische Information / Technical Information Schnelle Diode Fast Diode D 1331 SH 45T S Features • Specially designed for snubberless operation • 140°C maximum junction temperature • Low losses, soft recovery • Electroactive passivation by a-C:H

Transistor motorola 418

Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

mgy20n120d

Abstract: IGBT 250 amp
Contextual Info: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264