DIODE BY 028 Search Results

melf diode code

Abstract: glass mini melf diode mini melf diode Schottky melf BAS85
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE CDLL4148 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a black band High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS

MINI-MELF DIODE BLACK CATHODE

Abstract: CDLL4148 mini melf package details
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE CDLL4148 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a black band High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS

Hitachi DSA002748

Abstract: mark code e4 diode
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730 Z Rev 0 Dec. 1, 1998 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a

HSB0104YP

Abstract: Hitachi DSA0045 43E4
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730A Z Rev.1 Sep. 2000 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a

mark code e4 diode

Abstract: HSB0104YP
Contextual Info: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730 Z Rev 0 Dec. 1998 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Marking J30 SOT23

Abstract: 4014C g0750
Contextual Info: M O TO R O LA O rder this docum ent by MMBD1010LT1/D SEMICONDUCTOR TECHNICAL DATA L G r e e n i n e MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenUne™ Portfolio of devices with energy-conserving traits. This switching diode has the following features:

MBD-1005

Abstract: 1005LT
Contextual Info: MOTOROLA Order this docum ent by MMBD1005LT1/D SEMICONDUCTOR TECHNICAL DATA G L r e e n i n e MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the G reenLine P ortfolio o f devices with e n e rg y -c o n s e rv in g traits. This sw itching diode has the fo llo w in g features:

MOC263

Contextual Info: MOTOROLA O rder this docum ent by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically

1-14K

Abstract: N14 SMD CS1009 LM136 LT1009 LT1009CZ
Contextual Info: CS1009 CS1009 2.5 Volt Reference Description The CS1009 is a precision trimmed 2.500V ±5mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming

solar panel blocking diode

Contextual Info: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode

Contextual Info: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode

Contextual Info: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode

SDM4066

Contextual Info: 836860 2 SOL ITRON D E VI CE S INC -r- 3 95D 02839 S0LITR0N DEVICES INC DF|ö3t.fibOE 000203^ S T W « » © i r © Ä ? Ä IL HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED DARLINGTON CHIP NUMBER WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

14kW

Abstract: smd LT1009 smd n10 1009C LT1009CZ N14 SMD CS-1009CZ LM136 LT1009 n8n6
Contextual Info: CS-1009 CS-1009 2.5 Volt Reference Description The CS-1009 is a precision trimmed 2.500V ±5mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming

IN3070

Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. MIL-S-19500/169H 19 Mav 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,

567d

Abstract: 1N6492 1N6492U4
Contextual Info: INCH-POUND MIL-PRF-19500/567D 8 February 2008 SUPERSEDING MIL-PRF-19500/567C 12 September 2003 The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 May 2008. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,

GL6ZS27

Contextual Info: PREPARED BY: DATE: I 1 SPEC.No. ELECTRONIC COMPONENTS GROUP SHARPCORPORATION I SPiXIFICATION DEVICE SPECIFICATION Ix996047 Opto-Ekctronic Devices Division FOR Light Emitting Diode MODEL No. GL6ZS27 1 1. These specification sheets include materials protected under the copyright of Sharp Corporation “Sharp” .

Contextual Info: INCH-POUND MIL-PRF-19500/118H 19 July 2007 SUPERSEDING MIL-PRF-19500/118G 22 June 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 October 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,

1N6683

Abstract: 1N6685 1N6685US 1N6684 1N6640US
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 6 February 1998 METRIC MIL-PRF-19500/625A 6 November 1997 SUPERSEDING MIL-S-19500/625 15 July 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2006. INCH-POUND MIL-PRF-19500/117P 25 July 2006 SUPERSEDING MIL-PRF-19500/117N 6 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

1N5623A

Abstract: 1N5615 1N5615US 1N5617 1N5617US 1N5619 1N5619US 1N5621 1N5621US 1N5623
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 November 2008. INCH-POUND MIL-PRF-19500/429L 7 August 2008 SUPERSEDING MIL-PRF-19500/429K 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,