DIODE BRIDE Search Results

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

EH75

Abstract: EH60 EH6002B EH6004B EH6006B EH6008B EH6010B EH7502B EH7504B EH7506B
Contextual Info: Single Phase Bride e Modules EH60, EH75 Dim. Inches Minimum c ± I- l-L -l —H Microsemi Catalog Number EH6002B* EH7502B* EH6004B* EH7504B* EH6006B* EH7506B* EH6008B* EH7508B* EH6010B* EH7510B* EH6012B* EH7512B* Millimeter Maximum Minimum Maximum Notes A

Contextual Info: DB 25-005.-16 Dreiphasen-Si-Brfickengleichrichter 3-Phase Si-Bridee Rectifiers Nominal current Nennstrom 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1600 V Plastic case with Al-bottom Kunststoffgehäuse mit Alu-Boden 28.5 x 28.5 x 10 [mm]

Contextual Info: KBPC 1500. .1516 Silizium-Briickengleichrichter Silicon-Bridee Rectifiers 15 A Nominal current - Nennstrom 35. 1000 V Alternating input voltage - Eingangswechselspannung Type “W ” Type “F” 28.6 X 28.6 X 7.1 [mm] Metal case Metallgehäuse Casting compound has UL classification 94V-0

BRIDGE RECTIFIERS kbpc 2512

Contextual Info: KBPC 2500.2516 Silizium-Bruckengleichrichter Silicon-Bridee Rectifiers 25 A Nominal current - Nennstrom 3 5 .,1000 V Alternating input voltage - Eingangswechselspannung Type “W r Type “F” 28.6 X 28.6 X 7.1 [mm] Metal case Metallgehäuse Casting compound has UL classification 94V-0

Contextual Info: B40FS.B380FS Schnelle Si-Briickengleichrichter für die Oberflächenmontage Fast Switching Surface Mount Si-Bridee Rectifiers 1A Nominal current Nennstrom Alternating input voltage Eingangswechseispannung J_ L n= B — Q- Plastic case Kunststoffgehäuse

VERPACKUNGSVORSCHRIFT

Contextual Info: B.C 2300-1500 Silizium-Brückengleichrichter Silicon-Bridee Rectifiers — 2.3 A / 1.5 A Nominal current Nennstrom 19 - • 2 x 4 5 * -j 40.500 V Alternating input voltage Eingangswechselspannung 'yp A ir ¡id. a ■ 1 9 x 5 x 1 0 [mm] Pastic case

diode bridge KBU 8K

Abstract: diode bridge KBU 8d
Contextual Info: K B U 8 A .M Siliziiim -Briickengleichrichter Silicon-Bridee Rectifiers Nominal current N ennstrom \ — 4.5 45° 8.0 A Alternating input voltage Eingangswechselspannung 3 5 .7 0 0 V 23.5 x 7 x 19.3 [mm] Pastic case Kunststoffgehause J W eight approx.

diodo 2B

Contextual Info: 7 » > y v s rf*-K Bride» Diodo S Q . I . P . 5 2 Square In-line Package • JHß-tfäsBI O U T L IN E D IM E N S IO N S S5VBD 6 0 0 V 6 A a - z n e ^ c f f li jt3.2-°oi — ì H 1 > Î1 i m r I)-5 U nit 1 mm ■ ^ *£ 3 5 R A TIN G S Absolute Maximum Ratings

MG75N2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG75N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf= l .Ofis Max. trr= 0 .5fis (Max. ) . Low Saturation Voltage: VcE(sat)=5.OV(Max.) . Enahncement-Mode . Includes a Complete Half Bride in One

mg75n2ys

Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
Contextual Info: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.

transistor r1009

Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
Contextual Info: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

2SJ172

Abstract: 2SK970 4AM16
Contextual Info: 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.17Ω, VGS = 10V , ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = -10V , ID = -4A • High speed switching

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain

Contextual Info: 60V, 1A/2A Peak, 1/2 Bridge Driver with 4V UVLO HIP2103, HIP2104 Features The HIP2103 and HIP2104 are half bridge drivers designed for applications using DC motors, three-phase brushless DC motors, or other similar loads. • 60V maximum bootstrap supply voltage

Contextual Info: 60V, 1A/2A Peak, Half Bridge Driver with 4V UVLO HIP2103, HIP2104 Features The HIP2103 and HIP2104 are half bridge drivers designed for applications using DC motors, three-phase brushless DC motors, or other similar loads. • 60V maximum bootstrap supply voltage

4J52

Abstract: magnetrons Philips magnetrons sharp magnetron facon diode haute tension P 939 DIODE M501 sharp modulateur magnetron CONDENSATEUR PHILIPS
Contextual Info: P H IL IP S PÏÏ52 Forced-air cooled packaged MAGNETRON for use as pulsed oscillator, operating at a fixed frequency within the range 9345-94-05 Mc/s, capable of delivering a peak output power of atout 80 kW ' MAGNETRON refroidi par air forcé, avec aimant incorporé,

Contextual Info: www.fairchildsemi.com AN-9077 Motion SPM 7 Series User’s Guide Table of Contents 1 2 3 4 Introduction. 2 Application Example . 14 1.1. Design Concept .2

Contextual Info: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC

B2HKF

Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Contextual Info: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °

Contextual Info: Détecteurs opto-électroniques. Fibres optiques et amplificateurs pour fibres optiques. Précis, quelle que soit votre application. Edition 2014 Les détecteurs opto-électroniques Baumer allient des technologies éprouvées et des innovations ambitieuses.

circuit diagram bridge transducer 4-20ma

Abstract: 4-20mA transmitter for a bridge type transducer SCADA complete notes design of a 4-20mA transmitter for a bridge type LT1049 weight transducer 4-20ma 2N6121 XTR104 XTR104AP XTR104AU
Contextual Info: XTR104 4-20mA Current Transmitter with BRIDGE EXCITATION AND LINEARIZATION FEATURES APPLICATIONS ● LESS THAN ±1% TOTAL ADJUSTED ERROR, –40°C TO +85°C ● INDUSTRIAL PROCESS CONTROL ● FACTORY AUTOMATION ● BRIDGE EXCITATION AND LINEARIZATION ● WIDE SUPPLY RANGE: 9V to 40V