DIODE BODY MARK A1 Search Results

Contextual Info: AOZ8211 One-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small

fz-11p

Abstract: FZ-11 FD-L51 zener diodes color coded CX-30 FD-L52 FX-11A FX-13 push button fz FZ-10
Contextual Info: SERIES Color Detection Fiber Sensor FX-D1/A1/M1 PHOTOELECTRIC SENSORS FZ-10 FX-13 FX-11A Fiber Sensors Reliable and Precise Color Discrimination EX-20 EX-10 CX-30 CX-RVM5/D100/ND300R Amplifier Built-in Type CX-20 FZ-10 Marked Conforming to EMC Directive Red, Green and Blue LEDs

AOZ8211NI-12L

Abstract: AOZ8211 AOZ8211NI-05L MARKING 05L
Contextual Info: AOZ8211 One-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small

AOZ8211

Abstract: AOZ8211NI-05L AOS date code System alpha date code System
Contextual Info: AOZ8211 One-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

MARK BE diode SOD523

Abstract: diode marking code 12L MARK BE diode SOD523 general AOZ8201 AOZ8201NI-05L AOZ8201NI-12L 12L marking AOS date code System diode body mark a1
Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

MARKING G SOD523

Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

AOZ8201

Abstract: AOZ8201NI-05L AOZ8201NI-12L SOD523 land pattern DIODE ED 16 AOS date code System General Semiconductor diode marking ME
Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

MAX3208EAUB

Abstract: MAX3208E
Contextual Info: 19-3361; Rev 3; 7/10 Dual, Quad, and Hex High-Speed Differential ESD-Protection ICs The MAX3205E/MAX3207E/MAX3208E low-capacitance, ±15kV ESD-protection diode arrays with an integrated transient voltage suppressor TVS clamp are suitable for high-speed and general-signal ESD protection. Low input capacitance makes these devices ideal

MAX3208E

Abstract: MAX3205E MAX3205EATE MAX3207E MAX3207EAUT MAX3208EATE MAX3208EAUB Connector HDMI MAX3207EAUT-T
Contextual Info: 19-3361; Rev 3; 7/10 Dual, Quad, and Hex High-Speed Differential ESD-Protection ICs The MAX3205E/MAX3207E/MAX3208E low-capacitance, ±15kV ESD-protection diode arrays with an integrated transient voltage suppressor TVS clamp are suitable for high-speed and general-signal ESD protection. Low input capacitance makes these devices ideal

FMKA130

Contextual Info: FMKA130 FMKA130 Features • Compact Surface Mount with J-bend Leads SMA • 1.2 Watt Power Dissipation Package • 1.0 Ampere, Forward Voltage Less than 600mV SMA (DO-214AC) Color Band Denotes Cathode Mark: A13 Schottky Rectifier Absolute Maximum Ratings *

Contextual Info: FMKA130 FMKA130 Features • • • Compact Surface Mount with J-bend Leads SMA 1.2 Watt Power Dissipation Package 1.0 Ampere, Forward Voltage Less than 600mV SMA (DO-214AC) Color Band Denotes Cathode Mark: A13 Schottky Rectifier Absolute Maximum Ratings *

FMKA130

Contextual Info: FMKA130 FMKA130 Features • Compact Surface Mount with J-bend Leads SMA • 1.2 Watt Power Dissipation Package • 1.0 Ampere, Forward Voltage Less than 600mV SMA (DO-214AC) Color Band Denotes Cathode Mark: A13 Schottky Rectifier Absolute Maximum Ratings *

CSPESD304

Abstract: CSPESD304G
Contextual Info: 4-Channel ESD Array in CSP CSPESD304 Features Product Description • • The CSPESD304 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic

AOZ8231NI-05L

Abstract: AOZ8231 alpha date code System sod923
Contextual Info: AOZ8231 One-line Bi-directional TVS Diode General Description Features The AOZ8231 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small

Si8404DB

Abstract: s8404
Contextual Info: Si8404DB Vishay Siliconix New Product N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.031 @ VGS = 4.5 V 12.2 0.033 @ VGS = 2.5 V 11.6 0.035 @ VGS = 1.8 V 11.2 0.043 @ VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ) • TrenchFET Power MOSFET

a96 laser diode

Abstract: a96 laser a96 "laser diode"
Contextual Info: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)

231B DIODE

Abstract: Si8435DB
Contextual Info: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET

Si8435DB

Abstract: 231B DIODE
Contextual Info: New Product Si8435DB Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET

Contextual Info: Si8429DB Vishay Siliconix New Product P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 11.7 0.042 at VGS = - 2.5 V - 10.7 0.052 at VGS = - 1.8 V - 9.6 0.069 at VGS = - 1.5 V - 8.3 0.098 at VGS = - 1.2 V

Contextual Info: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET

Contextual Info: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)

CM1204-03CP

Abstract: CM1204 CM1204-03CS CSPESD304 esd diode a2
Contextual Info: CM1204 4-Channel ESD Array in CSP Features Product Description • The CM1204 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge ESD .

Si8404DB

Contextual Info: Si8404DB Vishay Siliconix New Product N-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.031 @ VGS = 4.5 V 12.2 0.033 @ VGS = 2.5 V 11.6 0.035 @ VGS = 1.8 V 11.2 0.043 @ VGS = 1.5 V 10.2 VDS (V) 8 Qg (Typ) • TrenchFET Power MOSFET

top side marking b2

Abstract: diode marking b2 supression diode CSPESD304 CSPESD304G top marking c3
Contextual Info: CSPESD304 4-Channel ESD Array in CSP Features Product Description • • The CSPESD304 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge