AD502
Abstract: No abstract text available
Text: PIN DIODE MODULES PIN diode attenuators PIN DIODE ATTENUATORS Features PIN diode attenuators are primarily used in applications where control power level is needed i.e. in system like AGC (Automatic Gain Control . These attenuators are current-controlled and can be proposed in a wide
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10GHz
AD502:
AD502
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP0524P Series SP0524P Series 0.5pF Diode Array RoHS Pb GREEN Description The SP0524P integrates 4 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide
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SP0524P
IEC61000-4-2
DFN-10
SP3012
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Untitled
Abstract: No abstract text available
Text: PIN DIODE MODULES PIN diode limiters PIN DIODE LIMITERS Features Silicon Pin Diodes limiters are mainly used as a protector in receiving systems. Pin Diodes offer the unique capability to handle high breakdown voltage. Their rugged construction enables to withstand
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BMH230
BMH16-01
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP0524P Series SP0524P Series 0.5pF Diode Array RoHS Pb GREEN Description The SP0524P integrates 4 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide
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SP0524P
IEC61000-4-2
DFN-10
SP3012
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP0524P Series SP0524P Series 0.5pF Diode Array RoHS Pb GREEN Description The SP0524P integrates 4 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide
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SP0524P
IEC61000-4-2
DFN-10
SP3012
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SP0524PUTG
Abstract: 0524p uDFN-10 UDFN10 SP0524P marking 0524P
Text: TVS Diode Arrays SPA Family of Products Low Capacitance ESD Protection - SP0524P Series SP0524P Series 0.5pF Diode Array RoHS Pb GREEN The SP0524P integrates 4 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide
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SP0524P
IEC61000-4-2
DFN-10
SP3012
SP0524PUTG
0524p
uDFN-10
UDFN10
marking 0524P
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Untitled
Abstract: No abstract text available
Text: Data Sheet 3.5W 808nm Uncooled Multimode Laser Diode Module BMU4-808/C-02-R01/R02 Features: The Oclaro BMU4-808/C-02-R01/R02 multimode laser diode module series has been designed to provide the highest power and reliability required for pumping solidstate lasers
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808nm
BMU4-808/C-02-R01/R02
BMU4-808/C-02-R01/R02
805-811nm
21CFR
D00482-PB
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Untitled
Abstract: No abstract text available
Text: Data Sheet 7W 808nm Uncooled Multimode Laser Diode Module BMU7-808/C-02-R01/R02 Features: The Oclaro BMU7-808/C-02-R01/R02 multimode laser diode module series has been designed to provide the highest power and reliability required for pumping solidstate lasers
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808nm
BMU7-808/C-02-R01/R02
BMU7-808/C-02-R01/R02
806nm
21CFR
D00450-PB
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Untitled
Abstract: No abstract text available
Text: Data Sheet 7W 808nm Uncooled Multimode Laser Diode Module BMU7-808/C-02-R01/R02 Features: The Oclaro BMU7-808/C-02-R01/R02 multimode laser diode module series has been designed to provide the highest power and reliability required for pumping solidstate lasers
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808nm
BMU7-808/C-02-R01/R02
BMU7-808/C-02-R01/R02
805-811nm
21CFR
D00450-PB
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DD3752
Abstract: No abstract text available
Text: L2E D NEC • bM275ES DD37521 b02 H N E C E LASER DIODE ELECTRONICS INC / NDL5070 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION NDL5070 is a 1550 nm pulsed laser diode especially designed fo r optical measurement equipment OTDR . The DC PBH
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bM275ES
DD37521
NDL5070
NDL5070
ABSOLUT520
GG37522
DD3752
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diode kep
Abstract: No abstract text available
Text: - 30E D • bMS7555 POSSESS 7 ■ N E C ELECTRONICS INC T'HhO*? LASER DIODE J NDL5003D 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE DESCRIPTION NDL5003D is a 1300 nm laser diode especially designed for long distance high capacity transmission systems. The DC*PBH
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S7555
NDL5003D
NDL5003D
NDL5003D,
NDL5003D1.
diode kep
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Untitled
Abstract: No abstract text available
Text: bSE D • bM27525 GG37S23 4Ö5 HNECE N E C ELECTRONICS INC LASER DIODE / NDL5071 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION ND L5071 is a 1 550 nm pulsed laser diode especially designed fo r optica l m easurement equipm ent O TD R . The DC-PBH
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bM27525
GG37S23
NDL5071
L5071
operating30
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precap
Abstract: No abstract text available
Text: bEE ]> • bM27SSS 0037b53 0T3 «NECE N E C ELECTRONICS INC PHOTO DIODE / _ N D L 5 4 0 5 C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS <£80 i i m InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405C is an InGaAs PIN photo diode for a light detector of long wavelength transmission systems. It covers the
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NDL5405C
precap
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C 33725
Abstract: 7DFL
Text: b2E D • NEC bM2752S DG37blD 7Dfl H N E C E ELECTRONICS INC LASER DIODE M ODULE NDL5605P 1 310nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5605P is a 1 310 nm DFB Distributed Feed-Back laser diode B utterfly package module w ith optical isolator. It in
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bM2752S
DG37blD
NDL5605P
310nm
NDL5605P
b427525
C 33725
7DFL
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Untitled
Abstract: No abstract text available
Text: bSE T> m bM27S2S DD37517 Ifll « N E C E N E C ELECTRONICS INC _ LASER DIODE NDL5060 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION N D L506 0 is a 1 3 1 0 nm pulsed laser diode especially designed fo r optica l m easurement equipm ent O T D R . The CD-PBH
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bM27S2S
DD37517
NDL5060
b427SES
DD3751Ã
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Untitled
Abstract: No abstract text available
Text: b2E D • bME7SSS GG37S73 TDD «NECE /■ N E C ELECTRONICS INC / LASER DIODE ND L5650D1 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DE SC RIPTIO N N D L5650D 1 is a 1 550 nm D F B D istrib u te d Feed-back laser diode c hip on carrier w ith ribbo n lead.
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L5650D1
L5650D
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72P1
Abstract: A4015
Text: N E C ELECTRONICS INC b2E J> m bM57S2S □D37cicib 131 « N E C E DATA SHEET N E C LASER DIODE MODULE ELECTRON DEVICE Q ^ | - y 72P 1 5 5 0 nm OPTICAL FIBER COMM UNICATIONS InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5772P is a 1 550 nm pulsed laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is
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bM57S2S
NDL5772P
NDL5772P
NDL5060
NDL5061
NDL5762P
NDL5764P)
NDL5070
NDL5071
72P1
A4015
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NDL5731P
Abstract: DL-5735 DL5735 DL-57
Text: N E C ELECTRONI CS INC bSE D • bME7SES 0037=552 'JOT INECE DATA SHEET NEC LASER DIODE MODULE NDL5 7 3 1 P ELECTRON DEVICE 1 310 nm O PTICA L FIBER COM M UNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5731P is a 1 310 nm laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed for a
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NDL5731P
1988M
DL-5735
DL5735
DL-57
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BUL791
Abstract: BULD125KC TO-5 PACKAGE case for transistor
Text: c f AN SYS BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE IUCTROMICS LIMITED Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode t rr Typically 1 TO-220 PACKAGE TOP VIEW
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BULD125KC
T0220
BUL791
BULD125KC
TO-5 PACKAGE case for transistor
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BULD85KC
Abstract: No abstract text available
Text: « JÜAN SYS fUCTROMGS LIMITED BULD85KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability • Diode t rr Typically 1 TO-220 PACKAGE
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BULD85KC
T0220
BULD85KC
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GE monitor
Abstract: NEC PM
Text: N E C ELECTRONICS INC bEE D • bM2752S 0 0 3 7 ^ 4 bEl M N E C E PRELIMINARY DATA SHEET N EC LASER DIODE MODULE NDL5723P ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIO NS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5723P is a 1 550 nm laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed fo r a
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bM2752S
NDL5723P
NDL5723P
NDL5717P
NDL5720P*
NDL5723P*
NDL5731P
NDL5735PA--
NDL5736PA--0
14PIN
GE monitor
NEC PM
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DD-37
Abstract: No abstract text available
Text: b2E » • bM27525 N E c ELEcmmcs / DD37MÖÜ 2 bT « N E C E INC - W S E R DIODE NDL5083 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC RIPTIO N N D L 5 0 8 3 is a 1 3 1 0 nm laser diode especially designed fo r optica l data com m unications. The Mesa-type DC-PBH Double
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bM27525
DD37MÖ
NDL5083
b427525
Q037462
DD-37
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LIC AGENTS DATA
Abstract: No abstract text available
Text: @ M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 DS4176 - 1 .4 APPLICATIONS • KEY PARAMETERS v RRM 3500V 3000A Jf A V 20000A FSM 1500(lC Qr 6.0|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998
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DS4176
DSF21035SV
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
LIC AGENTS DATA
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TIC 2460
Abstract: LIC AGENTS DATA
Text: @ M ITEL DSF21060SV Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1995 version, DS4231 - 2.2 DS4231 - 2.3 APPLICATIONS • KEY PARAMETERS v RRM 6000V 1690A Jf A V 16000A FSM 1200(lC Qr 6.5|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998
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DS4231
DSF21060SV
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55
TIC 2460
LIC AGENTS DATA
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