SOIC-150-8
Abstract: AMIS-30600 AMIS30600LINI1G KL30 KL31 I2T100
Text: AMIS-30600 LIN Transceiver General Description http://onsemi.com PIN ASSIGNMENT RxD 1 8 INH EN 2 7 VBB 6 LIN 5 GND VCC TxD 3 AMIS− 30600 The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the
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AMIS-30600
AMIS-30600
ISO9141
AMIS-30600/D
SOIC-150-8
AMIS30600LINI1G
KL30
KL31
I2T100
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SOIC-150-8
Abstract: I2T100
Text: AMIS-30600 LIN Transceiver General Description http://onsemi.com PIN ASSIGNMENT RxD 1 8 INH EN 2 7 VBB 6 LIN 5 GND VCC TxD 3 AMIS− 30600 The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the
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AMIS-30600
ISO9141
I2T100
AMIS-30600/D
SOIC-150-8
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Untitled
Abstract: No abstract text available
Text: AMIS-30600 LIN Transceiver General Description http://onsemi.com PIN ASSIGNMENT RxD 1 8 INH EN 2 7 VBB 6 LIN 5 GND VCC TxD 3 AMIS− 30600 The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the
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AMIS-30600
ISO9141
30600/D
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Untitled
Abstract: No abstract text available
Text: AMIS-30600 LIN Transceiver General Description http://onsemi.com PIN ASSIGNMENT RxD 1 8 INH EN 2 7 VBB 6 LIN 5 GND VCC TxD 3 AMIS− 30600 The single−wire transceiver AMIS−30600 is a monolithic integrated circuit in a SOIC−8 package. It works as an interface between the
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AMIS-30600
ISO9141
I2T100
AMIS-30600/D
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2284A STK672-740AN-E Thick-Film Hybrid IC 2-phase Stepper Motor Driver http://onsemi.com Overview The STK672-740AN-E is a hybrid IC for use as a unipolar, 2-phase stepper motor driver with PWM current control. Applications • Office photocopiers, printers, etc.
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ENA2284A
STK672-740AN-E
STK672-740AN-E
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2309 STK672-732AN-E Thick-Film Hybrid IC 2-phase Stepper Motor Driver http://onsemi.com Overview The STK672-732AN-E is a hybrid IC for use as a unipolar, 2-phase stepper motor driver with PWM current control. Applications • Office photocopiers, printers, etc.
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ENA2309
STK672-732AN-E
STK672-732AN-E
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Untitled
Abstract: No abstract text available
Text: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state
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CMT2N7002
115mA
800mA.
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on5134
Abstract: philips ON5134 transistor tda3612 OM8838ps BT 804 triac on5134 Transistor on5217 triacs bt 804 600v D203B SMD Transistor W02
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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DN48A
DN48A
on5134
philips ON5134 transistor
tda3612
OM8838ps
BT 804 triac
on5134 Transistor
on5217
triacs bt 804 600v
D203B
SMD Transistor W02
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philips ON5134 transistor
Abstract: on5134 triacs bt 804 600v BT 804 triac tda3612 Triac bt 808 SMD Transistor W02 TRIAC BT 812 OM8838ps D203B
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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DN48A
DN48A
philips ON5134 transistor
on5134
triacs bt 804 600v
BT 804 triac
tda3612
Triac bt 808
SMD Transistor W02
TRIAC BT 812
OM8838ps
D203B
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CMT2N7002
Abstract: Small Signal MOSFET
Text: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch
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CMT2N7002
115mA
800mA.
CMT2N7002
Small Signal MOSFET
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Untitled
Abstract: No abstract text available
Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V
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CMT2301
CMT2301
-20V/-2
-20V/-1
OT-23-3
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Untitled
Abstract: No abstract text available
Text: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch
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CMT2N7002
115mA
800mA.
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CMC lcd
Abstract: p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301 CMT2301GM233 CMT2301M233
Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V
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CMT2301
CMT2301
-20V/-2
-20V/-1
OT-23-3
CMC lcd
p-channel mosfet
sot-23 P-Channel MOSFET
20V P-Channel Power MOSFET
CMT2301GM233
CMT2301M233
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Untitled
Abstract: No abstract text available
Text: CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS ON produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch
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CMT2N7002
115mA
800mA.
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Untitled
Abstract: No abstract text available
Text: Electronic Component Distributor. Source:TE Connectivity P.N:D3497 Desc:RELAY TELECOM DPDT 2A 24V Web:http://www.hotenda.cn E-mail:sales@hotenda.cn Phone: +86 075583794354 Signal Relays AXICOM FT2/FU2 Relay n Telecom/signal relay (dry circuit, test access, ringing)
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D3497
med3528N
48VDC
D3521W
D3522W
D3523W
D3526W
12VDC
D3527W
24VDC
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D3528
Abstract: No abstract text available
Text: Signal Relays AXICOM FT2/FU2 Relay n Telecom/signal relay dry circuit, test access, ringing line 15x7.5mm (.59x.295”) n Switching current 2A n 2 form C bifurcated contacts (2 CO) n High sensitive 24V and 48V coil versions n Meets Telcordia GR 1089, FCC Part 68 and ITU-T K20, ≥ 2500V
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48VDC
125K/W
D3528
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D3497
Abstract: 9151 terminal D3491 2-1462035-7 axicom fu2 D3402
Text: Signal Relays AXICOM FT2/FU2 Relay n Telecom/signal relay dry circuit, test access, ringing line 15x7.5mm (.59x.295”) n Switching current 2A n 2 form C bifurcated contacts (2 CO) n High sensitive 24V and 48V coil versions n Meets Telcordia GR 1089, FCC Part 68 and ITU-T K20, ≥ 2500V
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48VDC
125K/W
D3497
9151 terminal
D3491
2-1462035-7
axicom fu2
D3402
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siemens 27 s1 diode
Abstract: Marking B23 BBY24 Q62702-B20-S1 Q62702-B22-S1 Q62702-B23-S2 T120 Q62702-B21 3SB05
Text: SIEM EN S Silicon Tuning Varactors BBY24 . BBY 27 • Abrupt junction tuning diode • Tuning range 120 V Type Marking Ordering Code BBY 24-S1 - Q62702-B20-S1 BBY 25-S1 Q62702-B21 -S1 BBY 26-S1 Q62702-B22-S1 BBY 27-S2 Q62702-B23-S2 Pin Configuration Package1
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24-S1
Q62702-B20-S1
25-S1
Q62702-B21
EHA07001
26-S1
Q62702-B22-S1
27-S2
Q62702-B23-S2
B235bOS
siemens 27 s1 diode
Marking B23
BBY24
Q62702-B20-S1
Q62702-B22-S1
Q62702-B23-S2
T120
3SB05
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734L1
Abstract: 7637 1C TN1 marking diode zener ME ZL 43 BTS 308 POWER SUPPLY BTS SIEMENS siemens profet description BTS734L1 Wiring Diagram siemens 604 semiconductor
Text: A23SbGS 0001730 75T S IE M E N S PROFET BTS 734L1 Smart Two Channel Highside Power Switch Product Summary Features • • • • • • • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection
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fl23SbÃ
734L1
P-DSQ-20-9
BTS734L1
2l20x
734L1
7637 1C
TN1 marking
diode zener ME ZL 43
BTS 308
POWER SUPPLY BTS SIEMENS
siemens profet description
Wiring Diagram siemens
604 semiconductor
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smd diode RSTJ
Abstract: zener smd 4T SCR application 77150
Text: SIEMENS PROFET BTS412B2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Load current (ISO) Vbb(on) R Current limitation /L(SCr) • • • • •
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BTS412B2
O-220AB/5
Q67060-S6109-A2
O-220AB/5,
E3043
412B2
smd diode RSTJ
zener smd 4T
SCR application
77150
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smd transistor code 314
Abstract: 41282 bts BTS 308 731 zener diode BTS 307 E3062A BTS412B BB 313 BTS 305 GI 312 diode POWER SUPPLY BTS SIEMENS
Text: • fl235b05 0081444 5T1 SIEM EN S PROFET B TS 412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump
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BTS412B2
fl235b05
412B2
O-220AB/5
Q67Q60-S6109-A2
O-22QAB/5,
E3043
412B2
E3043
smd transistor code 314
41282 bts
BTS 308
731 zener diode
BTS 307 E3062A
BTS412B
BB 313
BTS 305
GI 312 diode
POWER SUPPLY BTS SIEMENS
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transistor DA3 307
Abstract: transistor DA3 309 HC-49/transistor DA3 307 DA3 307
Text: • fl235bDS 0 0 8 1 4 4 4 5T1 SIEMENS PROFET BTS412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump
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fl235bDS
BTS412B2
as35bos
412B2
transistor DA3 307
transistor DA3 309
HC-49/transistor DA3 307
DA3 307
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCH08A03L sa/ sov 3.1 122 MAX FEATURES k .UU.Ul,. y iiE rm DIA 10.31.405) 4.8U89> 'MAX o S im ila r to TO-220AB Case o F u lly M olded Isolation 2.H5(.112I 2.551.11») o D u a l D iodes-C athode C om m on O L ow F o rw a rd V o ltag e D rop
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FCH08A03L
O-220AB
FCH08A-
GG2G11
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