h569-445
Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Text: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:
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H569-445
h569-445
H569-445 G1
FAJ 38
ED83127-30
ED83127-30 G-D
T-83150-30
848258679
BDFB
ED83127
G61A
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Voltage Regulator LM78L09 TO-92 package
Abstract: Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V
Text: Bay Linear Inspire the Linear Power LM78LXX 100mA Positive Voltage Regulator Description Features The Bay Linear LM78LXX is integrated linear positive regulator with three terminals. The LM78LXX offer several fixed output voltages making them useful in wide range of
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LM78LXX
100mA
LM78LXX
100mA
Voltage Regulator LM78L09 TO-92 package
Diode BAY 46 Data
LM78L05 TO92
Diode BAY 46
Diode BAY 96
LM78L15
datasheet lm78l05
Diode BAY 19
LM78L18
15Vto25V
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60N03
Abstract: 60N035 60N035S Bay Linear 60N035T
Text: Bay Linear Linear Excellence 60N035 N-Channel Field Effect Transistor Advance Information Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications
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60N035
O-220
60N03
60N035
60N035S
Bay Linear
60N035T
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Diode BAY 55
Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
Text: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications
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4N600
O-220
Diode BAY 55
Bay Linear
4N600S
4N600T
4N6003600
DSA0083437
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IR 822P
Abstract: B8226 B822P 8227 hsms2827 b8228 B822R hsms-2827 cross reference B822 B 8227 Schottky Quad
Text: Bay Linear Inspire the Linear Power B8220 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features This specific line of Schottky diodes were specifically designed for both digital and analog applications. This series includes a wide range of specifications and
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B8220
B822x
IR 822P
B8226
B822P
8227
hsms2827
b8228
B822R
hsms-2827 cross reference
B822
B 8227 Schottky Quad
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ASCOM 48V 150A
Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
Text: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this
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H569-429
600-Ampere,
140-Volt
H569-429
ASCOM 48V 150A
KS-20472-L1S
ASCOM rectifier
ED83119
ed83119-30
ED83246-30
KS-22089
KS-20472
welding rectifier schematic
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DIODE S4 56
Abstract: Diode BAY 61 diode din 4148 DIODE S4 61 BAY 61 Q62702-A389 1N4148 braun diode 4148 n4148
Text: BAY 61 S iliziu m -S ch altd io d e BAY 61 ist eine Silizium -Diode im Glasgehäuse 56 A2 DIN 41883 D O -3 5 . Sie ist besonders als Schaltdiode geeignet, m it kurzer Rückwärtserholzeit und geringer Kapazität. Die Diode ist ähnlich dem Typ 1 N 4148 und durch Farbringe gekennzeichnet (blau, braun), Kathodenseite
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DO-35)
Q62702-A389
57lTiax.
03max.
DIODE S4 56
Diode BAY 61
diode din 4148
DIODE S4 61
BAY 61
Q62702-A389
1N4148
braun
diode 4148
n4148
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Untitled
Abstract: No abstract text available
Text: BAY 92 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Schnelle Schalter, für hohe Betriebsspannungen Applications: Fast switches, with high supply voltages Abmessungen in mm Dimensions in mm 1 1 Il_ I If— "111 1 1 1 1U - H i —
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Diode BAY 45
Abstract: Diode BAY 89 41880
Text: BAY 89 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Allgemein, für sehr hohe Betriebsspannungen Applications: General purpose, for very high supply voltages Normgehäuse Case 5 1 A 2 DIN 41880 JEDEG DO 7 Gewicht • Weight max. 0,2 g Abmessungen in mm
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Diode BAY 61
Abstract: BAY 61 n4148 Diode N4148 diode din 4148 diode bay 56A2 din 4148
Text: B A Y 61 Silico n sw itch in g diode BAY 61 is a silicon diode in a glass case 56A 2 DIN 41883 DO-35 . It is particularly suitable for use as switching diode, having a short reverse recovery time and low capacitance. The diode is similar to type 1 N4148 and identified by colour rings
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DO-35)
N4148
k57max
03max.
150cC)
100nA)
150oC)
Diode BAY 61
BAY 61
Diode N4148
diode din 4148
diode bay
56A2
din 4148
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Diode BAY 93
Abstract: No abstract text available
Text: BAY 93 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Sehr Schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions In mm »’»• KATHODE 01,9 CATHODE 0 0 ,5 8 Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35
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Jun7/0474
Diode BAY 93
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Diode BAY 96
Abstract: Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67
Text: BAY 67 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: HF-Schaltdicide Applications: Switching RF signals Abmessungen in mm Dimensions in mm g 2 ,6 . II— 11 0 0 ,5 5 — |l- — - H I — •— —-2 6 -► m -7 .2 -— —- 2 6 - -
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-26-J
Diode BAY 96
Diode BAY 55
BAY67
RF-45
IR diodes TFK 4
TFK diode
TFK diodes
DIODE R 67
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Diode BAY 21
Abstract: Diode BAY 46 ir 0588
Text: A E G 17 E CORP D aaa'mab 3 q q qt t s s BAY 135 TTIILIIMllfillKiKl electronic Creative Technologies 1 01 0 Silicon Planar Diode " - - ? Applications: Protection circuits, delay circuits Features: • Very low reverse current Dimensions in mm 9i io e Cathode
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Diode BAY 54
Abstract: No abstract text available
Text: Te m ic BAY 135 TELEFUNKEN Semiconductors Silicon Planar Diode Features • Very lo w reverse current Applications P rotection circu its, d e la y circu its Absolute Maximum Ratings Tj = 2 5 °C Param eter Test C onditions Peak reverse voltage, non repetitive
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Diode BAY 46
Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j
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1N456
BAW21A
1N456
BAX12
CB-102)
CB-104)
Diode BAY 46
Diode BAY 45
Diode BAY 21
Diode BAY 80
Diode BAY 19
BAY 73 diode
Diode BAY 41
Diode BAY 72
Diode BAY 42
bav 21 diode
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Diode BAY 46
Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j
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1N456
BAW21A
CB-26)
CB-127
Tamb100Â
Tamb125Â
Tamb60Â
CB-127
CB-127.
Diode BAY 46
1N 4000 diode
1N3069
BA224-220
BAV45
BAY41
Diode BAY 41
Diode BAY 80
BAX12
SFD49
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Diode BAY 46
Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
SFD79
CB-26)
baw55
CB-127
CB-127.
Diode BAY 46
Diode BAY 80
Diode BAY 74
Diode BAY 45
Diode BAY 19
diode BAW55
BAY 73 diode
1N3595
Diode BAY 21
Diode BAY 41
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Diode BAY 71
Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
CB-127.
Diode BAY 71
Diode BAY 45
Diode BAY 46
Diode BAY 88
BAW21
ESM 3070
1n 4009 diode
BAY67
SFD49
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Diode BAY 19
Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Text: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V
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BAW21
Diode BAY 19
Diode BAY 21
Diode BAY 80
IR 10D DIODE
Diode BAY 18
Diode BAY 45
Diode BAY 42
"BAY 21"
BAY18
bay 17 diode
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Diode BAY 61
Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Text: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12
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3AX11/IO
3AX11/IU
11/ilo
3AX11/IÃ
3AX11
BAX11
79/III
79/IV
26/II
Diode BAY 61
Diode BAY 55
Diode BAY 80
BXY 36 DIODE
diode sax 34
bxy26
Diode BAY 68
Diode BAY 23
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Diode BAY 21
Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Text: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j
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1N456
BAW21A
CB-26)
Diode BAY 21
Diode BAY 18
Diode BAY 32
Diode BAY 19
Diode BAY 12
Diode BAY 45
BAY46
BAW32B
BAY18
BAW32D
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Diode BAY 55
Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
Text: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7
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U-26-Â
Diode BAY 55
Diode BAY 88
Diode BAY 21
Diode BAY 45
BAY 88 diode
BAY 87 diode
U264 B
u264
74345
BAV86
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Diode BAY 54
Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
Text: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight
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Diode BAY 68
Abstract: diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode Diode BAY ODOT747 marking 69
Text: A E G CORP 17E D O D ETM Sb Q Q G TTH S □ • BAY 68 • BAY 69 TfiBLSiPiyiliiKIIKl electronic Creative TechnoSogies T-0Z-Q°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm Cathode Standard glass case 5 4 A 2 DIN 41880
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rLS25Â
T-03-09
ODOT747
Diode BAY 68
diode bay 69
Diode BAY 45
diode I-35 L
aeg diode
bay 68 diode
Diode BAY
marking 69
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