DIODE BA 104 Search Results

r1560s3s

Abstract: TA49410 R1560S r1560s3 IRF840 ISL9R1560S3S TB334
Contextual Info: ISL9R1560S3S Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 15A, 600V Stealth Diode Features The ISL9R1560S3S is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

K1560G3

Abstract: IRF840 ISL9K1560G3 TA49410 TB334 K1560G K1560
Contextual Info: ISL9K1560G3 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 15A, 600V Stealth Dual Diode Features The ISL9K1560G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

IRF840

Abstract: ISL9R860S3S TB334
Contextual Info: ISL9R860S3S May 2001 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 8A, 600V Stealth Diode Features The ISL9R860S3S is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

K3060G3

Abstract: ISL9K3060G3 TB334 TA49411 mosfet 600V 30A
Contextual Info: ISL9K3060G3 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 30A, 600V Stealth Dual Diode Features The ISL9K3060G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

Application of irf840

Abstract: IRF840 ISL9R460S3S TA49408 TB334
Contextual Info: ISL9R460S3S May 2001 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 4A, 600V Stealth Diode Features The ISL9R460S3S is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

diode 1079

Abstract: medical application of laser semiconductor laser 1064 nm laser diode
Contextual Info: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-1064-08000-4020-CMT04-0000 General Product Information Product Application

Laser Diode 808 nm

Abstract: eyp-bal-0808 semiconductor laser
Contextual Info: Version 0.90 26.05.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0808-08000-4020-CMT04-0000 General Product Information Product Application

medical application of laser

Abstract: M4000 980 nm laser diode
Contextual Info: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0980-08000-4020-CMT04-0000 General Product Information Product Application

laser diode 635 nm

Contextual Info: Version: 1.02 23.02.2007 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0653-00500-0710-CMT02-0000 Absolute Maximum Ratings Symbol Unit min typ max Operational Temperature at case TC °C 40 Forward Current

1064 nm laser diode

Abstract: NTC 10 KOHM
Contextual Info: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-1064-10000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case

NTC Thermistor 8 kOhm

Abstract: CW laser diode 808 nm eypbal0808070004020cdl010000 eyp-bal-0808-07000-4020-cdl01-0000 connector 2-pin
Contextual Info: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0808-07000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case

thermistor 102 ntc

Abstract: RESISTOR SIL 102 5 PIN
Contextual Info: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0980-10000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case

Application of irf840

Abstract: IRF840 ISL9R1560G2 R1560G2 TA49410 TB334
Contextual Info: ISL9R1560G2 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- yrds ermitor, wer OS- 4912.2 Features The ISL9R1560G2 is a Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

R3060G2

Abstract: ISL9R3060G2 TB334
Contextual Info: ISL9R3060G2 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- yrds ermitor, wer OS- 5003.1 Features The ISL9R3060G2 is a Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

BA423

Contextual Info: blE D • bbâB^Bl DD2blb3 MST M A P X N AUER PHILIPS/DISCRETE BA423 _ SILICON A.M. BAND SWITCHING DIODE The BA 423 is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A

Contextual Info: 0 S HI BA LASER/FBR OP T I C G1 J> m ^0*17255 D ü l b l l ö 7 • T O Sb 13 T - 4T -°7 TOSHIBA FOR OPTICAL COMMUNICATIONS Laser Diode Modules for Optical Communications TOLD320 TOLD322 TOLD32Q/322 / Applications Features •Light source for optical subscriber loops

1300313

Abstract: JE 13003
Contextual Info: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)

Scans-0017348

Contextual Info: IN6G TUNG-SOL DIODE-POWER PENTODE A M P L IF IER COATED FILAM ENT 1 .4 VOLTS 0 .0 5 AMPERE DC G LA SS BULB SMALL 8 PIN OCTAL BASE BOTTOM VIEW THE TU N G -S O L INbG I S A LOW V O L T A G E , PENTODE WITH A S I N G L E V O L T S OF DIO DE S E C T I O N . " B " BA T T E R Y AND A S I N G L E

BA50BC

Abstract: BA00BC0WFP BA00BC0WCP-V5 BA50BC0WFP BA00BC0WFP equivalent bc0w BA00BC0W BA00BC0WT BA00BC0WT-V5
Contextual Info: Secondary LDO Regulator Series for Local Power Supplies 1A Secondary LDO Regulators for Local Power Supplies BA□□BC0 Series,BA□□BC0W Series,BA00BC0W Series No.10024EBT02 Description The BA□□BC0 are low-saturation regulators with an output current of 1.0 A and an output voltage accuracy of 2%. A

BA50BC0WFP

Abstract: 09024EAT02 BA00BC0W BA00BC0WT bc0w BA00BC0WFP BA00BC0WCP-V5
Contextual Info: Secondary LDO Regulator Series for Local Power Supplies 1A Secondary LDO Regulators for Local Power Supplies BA□□BC0 Series,BA□□BC0W Series,BA00BC0W Series No.09024EAT02 Description The BA□□BC0 are low-saturation regulators with an output current of 1.0 A and an output voltage accuracy of 2%. A

diode aa113

Abstract: germanium rectifier diode Germanium rectifier BA diode diode aa 90 diode ba 104 germanium-diodes germanium "RF diode" silicon diode and germanium
Contextual Info: Inventory o f discrete standard Types 9.2. Germanium-diodes Type Application AA 113 1 HF-diode Reverse voltage Forward voltage l/F at / F = 10 mA Reverse current /„ at l/R= 1 0 V V) (V) (HA) 60 20 1.1 (< 1.6) 12 A A 1 1 6 1) HF-dicide <1 .0 20 AA 117 A A 1 1 8 1)

BA102 diode

Abstract: BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A
Contextual Info: C B 14 Variable capacitance diodes continued Diodes à capacité variable ( suite ) Type Case B oîtie r T O 92 (CB 97) C B 12 Tam b25oC VR (V) 'F (m A) 'r (nA) max max max 100 5000 100 C VR (V) (pF) / Vr C ÎV ^ /C ^ Ï./ v , (V) m in / (V ) / / v2 (V ï

BA00JC5WT

Abstract: BA50JC5T BA00JC5W
Contextual Info: Secondary LDO Regulators Secondary Fixed Output LDO Regulators BA□□JC5 Series Secondary Variable Output LDO Regulator BA00JC5WT No.11024EBT03 Description The BA□□JC5 are low-saturation regulators with an output current of 1.5 A and a voltage accuracy of 1%. A broad output

BA00JC5WT

Abstract: BA50JC5T TO-220FP-3
Contextual Info: Secondary LDO Regulator Series for Local Power Supplies 1.5A Secondary LDO Regulators for Local Power Supplies BA□□JC5 Series,BA00JC5W Series No.09024EAT03 Description The BA□□JC5 are low-saturation regulators with an output current of 1.5 A and a voltage accuracy of 1%. A broad output