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    DIODE B5C Search Results

    DIODE B5C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE B5C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C532 diode

    Abstract: b16/41289
    Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode


    Original     		FP50R06W2E3 14BBFB' A4F32 F223B 1231423567896A4BC3D6E23F 61F7DC C532 diode b16/41289 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C36"#$ 6%1C3B132214BBFB &' 6 6*+


    Original     		DDB6U75N16YR 14BBFB 06123B F223B 6043C0F0613265C 3269F 6123B 043C0F06 06123B PDF

    TDB6HK180N16RR

    Abstract: 6a65
    Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3


    Original     		TDB6HK180N16RR CEF36" 3BC1322C14BB 32C36 36423B 4256E D6345 6423B 36423B 6a65 PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    SEMTECH MARKING sot-143

    Abstract: No abstract text available
    Text: SLVE2.8 SEMTECH Today*« Rauiki.1 & Low Voltage TVS Diode for ESD and Latch-Up Protection SLVG2.8 Revised - February 17, 1999 DESCRIPTION FEATURES The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and


    OCR Scan     		OT-143 SEMTECH MARKING sot-143 PDF

    IDA-07318

    Abstract: INTERMETal diode
    Text: IDA-07318 M aglC '" Silicon Bipolar MMIC 1.5 Gb/s Laser Diode Driver ft "KM P A C K A R D ¥ t i¡¡ % H E W L E T T 180 mil Package Features • • • • • • • • High Data Rates: 1.5 Gb/s NRZ High M odulation Current: 50 mA High Prebias Current: 50 mA


    OCR Scan     		IDA-07318 INTERMETal diode PDF

    Untitled

    Abstract: No abstract text available
    Text: □ I X Y IXSH15N120AU1 S P R E L IM IN A R Y D A T A S H E E T IGBT with Diode ^C 2 5 "S" Series - Improved SCSOA Capability Symbol T est C onditions V CES T j = 2 5 °C to 150°C V CGR T j = 2 5 °C to 150°C ; f^E= 1 M ß V GES V CES V CE sat M axim um Ratings


    OCR Scan     		IXSH15N120AU1 125-C, -100A/ 1005C, 125-C D-68619; PDF

    IPB065N15N3

    Abstract: 5F040 ED 05 Diode marking EB5
    Text: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


    Original     		IPB065N15N3 7865AE5 5F040 ED 05 Diode marking EB5 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB027N10N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R 9H"[Z#$YMd *&/ Y I9 )*( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


    Original     		IPB027N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à PDF

    Untitled

    Abstract: No abstract text available
    Text: BSC360N15NS3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R 9H"[Z#$YMd +. Y I9 + 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀  ฀T฀?@5B1D9>7฀D5=@5B1DEB5


    Original     		BSC360N15NS3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à PDF

    CCD MARKING

    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $    


    Original     		IPA075N15N3 CCD MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: IPD180N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀-( ฀ )0 Y I ฀ ,+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


    Original     		IPD180N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB036N12N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀ ฀3?>F5BD5BC Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H *( J R 9H"[Z#$YMd +&. Y I9 )0( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀฀+9H"[Z#


    Original     		IPB036N12N3 381B75à CG9D389 D5CD54 D1B75Dà 931D9? D85BG9C5à PDF

    Untitled

    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y I9 ,+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5 Q฀)2 6B55฀<514฀@<1D9>7฀+?",฀3?=@<91>D


    Original     		IPA075N15N3 D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à PDF

    Untitled

    Abstract: No abstract text available
    Text: IPD122N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ )*&* Y I ฀ -1 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


    Original     		IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à PDF

    Untitled

    Abstract: No abstract text available
    Text: IPA086N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ 0&. Y I9 ,- 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


    Original     		IPA086N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB065N15N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R ,?>=1H฀-( .&- Y I9 )+( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


    Original     		IPB065N15N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à PDF

    marking 9D

    Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f
    Text: IPA086N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H 0&. Y" I9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


    Original     		IPA086N10N3 7865AE5 marking 9D marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f PDF

    4b 5c marking

    Abstract: No abstract text available
    Text: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q  T ? @5B1D9>7 D5=@5B1D EB5


    Original     		BSC360N15NS3 4b 5c marking PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H- Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &   I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#


    Original     		IPB042N10N3 IPI045N10N3 IPP045N10N3 PDF

    marking EB5

    Abstract: 5CC1
    Text: BSC320N20NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +* Y" I9 +. 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9


    Original     		BSC320N20NS3 7865AE5 marking EB5 5CC1 PDF

    marking EB5

    Abstract: diode marking eb5 marking G9
    Text: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H )*&* Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


    Original     		IPD122N10N3 7865AE5 marking EB5 diode marking eb5 marking G9 PDF

    Q451

    Abstract: 95B9 C19B marking EB5 d91d package marking 5f
    Text: IPD180N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H-(    )0 Y" I ,+ 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


    Original     		IPD180N10N3 7865AE5 Q451 95B9 C19B marking EB5 d91d package marking 5f PDF

    Untitled

    Abstract: No abstract text available
    Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# V 9H 0( J R ,?>=1H฀,&


    Original     		IPP057N08N3 IPI057N08N3 IPB054N08N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? PDF