DIODE B3F Search Results

BAS86

Abstract: Philips Diode schottky mrc129
Contextual Info: Philips Semiconductors Product specification Schottky barrier diode BAS86 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed

MMAD130

Abstract: MMAD1103 MMAD1107 MONOLITHIC DIODE ARRAYS MMAD1105 MMAD1109
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA bV M M A m 3 o/"d M o n o lith ic D io de A rra y s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching

LTC4098-3.6

Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense

Contextual Info: , O N Y 1_ S L D High Power Red Laser Diode Description 1 2 3 1 V L Preliminary Package Outline The SLD1231VL is a short wavelength high power Unit : mm M-274 laser diode, created as a light source for the nextgeneration high density magneto-optical discs.

Diode Marking ZM Motorola

Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Contextual Info: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

1N5628

Abstract: 12115X marking AB SOD123 1N5828
Contextual Info: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

12v dc full wave bridge rectifier

Abstract: 5000 watt full bridge design 1N5S34
Contextual Info: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

BUT35

Abstract: transistors but35 CM4050
Contextual Info: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS

Contextual Info: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

1n4573

Abstract: 1n4573a die 1N827A 1n4579 10823a 1C45 1n829 1n4573 die
Contextual Info: M O T O R O L A SC O I O D E S / O P T O l 6367255 MOTOROLA SC 34 <D I O D E S / O P T O DE | b3fci7S55 0 0 3 0 1 1 0 3 | 34C 38118 T -//- D 0 5" SILICON ZENER DIODE DICE continued) 1C821 & 1C4565 — SERIES DIE NO. LINE SOURCE — DZD400 This die provides performance equal to or better than that

1117T

Contextual Info: MOTOROLA Order this document by MBR150/D SEM ICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers MBR150 MBR160 . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

BUT14

Abstract: SAF 1092 2sc 3402 transistor HN 554 transistor 100-C 3399 transistor motorola darlington power transistor TRANSISTOR 2SC 635
Contextual Info: MOTOROLA SC XSTRS/R F la E D | 33t3755 M OOflMaM1! fa | MOTOROLA S E M IC O N D U C T O R BUT14 TECHNICAL DATA 25 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 850 VOLTS

SPC4077

Abstract: 84N1161 LM7805 100mA tm162aaa6-2 84N1161 jack SPC4077 datasheet motorola lm7805 newark U3 LM7805 5v regulator 1n4148 0805
Contextual Info: Bill of Materials Qty Value Description Label 7 5 1 1uF .1uF .01uF Electrolytic Capacitor Capacitor 0805 Capacitor (0805) C1, C2, C9, C10, C11, C12, C13 C3, C5, C6, C7, C8 C4 1 1 1N4148 Red Switching Diode 1n4148 Red LED (1206) D1 DS1 1 1 1 1 LM7805 MMA1220

diode t88

Contextual Info: MOTOROLA Order this document by BAV70WT1/D SEMICONDUCTOR TECHNICAL DATA BAV70WT1 Dual Switching Diode M o to ro la P re ferre d D e vic e ANODE • N— ° 1 CATHODE -N - 2 -O MAXIMUM RATINGS T a = 2 5 ° C Symbol Max Unit Reverse Voltage Rating Vr 70

Contextual Info: MOTOROLA Order this document by BAL99LT1/D SEMICONDUCTOR TECHNICAL DATA S w itching Diode BAL99LT1 ANODE 3 O CATHODE O 2 MAXIMUM RATINGS Rating Symbol Value Unit Vr 70 Vdc if 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C R o ja 556 °C/W Pd 300 mW 2.4 mW/°C

SG DIODE

Abstract: ic Thyristor firing circuit GT01000 MGT01200 GTO MOTOROLA
Contextual Info: M O T O R O L A SC DIODE S/ OP TO h3b7'2SS GQail03 =| • 2SE D r - a s w f MGT01000 MGT01200 Gate Turn-Off Thyristors The GTO is a fam ily of asym m etric gate turn-off thyristors designed prim arily for dc pow er sw itching applications such as m otor drives, sw itching pow er supplies,

Contextual Info: M O TO RO LA SC D I O D E S / O P T O I M0T7 L.3b7255 0 0 0 7 3^ 5 G3S bflE » Order this data sheet by BAV199LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information D ual S e rie s S w itc h in g D iode BAV199LT1 Motorola Preferred Device This switching diode has the following features:

MJ10006

Contextual Info: I tBbTESM MOTOROLA TECHNICAL DATA D e s ifjn o r s D a ta S h e e t 10 A M P E R E NPN SILICON SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE POWER DARLINGTON TRANSISTORS T he M J1 0 0 0 6 an d M J1 0 0 0 7 Darlington transistors are design ed

0C45

Abstract: MBR2530CTL
Contextual Info: Order this data sheet by M BR2535CTL/D MOTOROLA SEMICONDUCTOR T-03~M TECHNICAL DATA M O T O R O L A SC D I O D E S / O P T O 3TE D O L>3b755S 0 0 0 3 0 5 0 0 C 1 M 0 T 7 MBR2535CTL MBR2530CTL Switchmode Power Rectifiers . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode.

AD130

Abstract: diode array MMAD1107 MMAD130 MMAD1105 MMAD1106 MMAD1109 MONOLITHIC DIODE ARRAYS AD1107
Contextual Info: MOTOROLA SC XSTRS/R 12E F ^ b3fe?c!54 T-Ol -01 0 QAUA3 1 7 g MMAD13Q MMADI 103 thru MMAD1107 MMAD1109 CASE 751A-02 SO-14 M A X IM U M RATINGS Sym bol Value Unît vrm 50 Vdc Steady-State Reverse Voltage Vr 40 Vdc Peak Forward Current 25°C 'F M 500 mA Continuous Forward Current

MTP3055EL

Abstract: MTP-3055EL 221A-06 AN569
Contextual Info: MO T O R O L A SC XSTRS/R F bflE D • b3fc.725M GGTÖßS? TD7 MOTOROLA ■ i SEMICONDUCTOR TECHNICAL DATA M TP3055EL Designer's Data Sheet Motorola Preferred Device T M O S IV P o w er Field E ffe c t T ransistor N-Channel Enhancem ent-Mode Silicon Gate

irf 4110

Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 IRF630 IRF631 irf 1962 SS-AT9
Contextual Info: MOTOROLA SC X S T R S /R F IME D II b3fej?554 0 0 0 ^ ^ 3 3 MOTOROLA I • SEMICONDUCTOR TECHNICAL DATA IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed fo r low

2N6823

Abstract: transistor 3s4 2n6823 transistor AN569 motorola mosfet
Contextual Info: MOTOROLA SC X S T R S /R 1HE D I F b3fc>?254 G O f l i b m T 3 | S MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6823 Designer's Data Sheet Pow er Field Effect Transistor N -C h an n el Enh an cem en t-M ode S ilic o n G ate T M O S TMOS POWER FETs 3 AMPERES ros on = 2 8 OHMS

221A-06

Abstract: AN569 MTP10N25 TMOS Power FET
Contextual Info: M O T O R O L A SC CX S T R S / R F bflE D • b3fc,7ES4 GO'iflTBl 557 « n O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement M ode Silicon Gate TMOS POWER FET 10 AMPERES RDS on) = 0.45 OHM