schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode
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QFN28
QFN28-5x5
D-55294
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Untitled
Abstract: No abstract text available
Text: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses
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DSS6-0025BS
O-252
60747and
20110915a
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Untitled
Abstract: No abstract text available
Text: DSS6-0045AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 6A 0.50 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values
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DSS6-0045AS
O-252
6-0045AS
60747and
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Untitled
Abstract: No abstract text available
Text: DSS6-015AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 150 V 6A 0.62 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values
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DSS6-015AS
O-252
6-015AS
60747and
20110915a
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zener diode rd20e b2
Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Text: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.
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RD200E
DO-35)
RD200E
DO-35
RD130E
RD200E:
RD39E
zener diode rd20e b2
diode zener 1N 398
zener diode B3
Zener Diode B1 9
zener diode rd13e
zener diode B5
RD6.2E
zener diode rd39e b5
RD6.8E
NEC Zener diode RD3.0E
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switching transistor msd
Abstract: Mil-R-39016/11 tyco mil relay
Text: MS MSD MSDD MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MS MSD MSDD MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE
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MIL-R-39016/11
MIL-R-39016/16
MIL-R-39016/21
MIL-R-28776/3
switching transistor msd
Mil-R-39016/11
tyco mil relay
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C 828 Transistor
Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9
Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE
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MIL-R-39016/9
MIL-R-39016/15
MIL-R-39016/20
MIL-R-28776/1
C 828 Transistor
C 828 Transistor pins
TRANSISTOR C 369
transistor c 828 low level
Mil-R-39016
iC 828 Transistor
transistor 828
MIL-R-39016/9
828 diode
MIL-R-39016-9
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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IXYS DSA 12
Abstract: No abstract text available
Text: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:
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60747and
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IXYS DSA 12
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smd code book B3 transistor
Abstract: PMEM4010ND PMEM4010PD TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD npn MARKING CODE PR
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor/Schottky diode module Product specification Supersedes data of 2002 Oct 28 2003 Jul 04 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND
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M3D302
PMEM4010ND
SCA75
613514/02/pp10
smd code book B3 transistor
PMEM4010ND
PMEM4010PD
TRANSISTOR SMD MARKING CODE A1
TRANSISTOR SMD npn MARKING CODE PR
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TRANSISTOR SMD MARKING CODE
Abstract: TRANSISTOR SMD MARKING CODE A1 transistor data cd 100 smd code book B3 transistor MARKING SMD npn TRANSISTOR pulse to sinewave convertor smd transistor marking B3 TRANSISTOR SMD MARKING CODE UA schottky transistor npn PMEM4010PD
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor/Schottky diode module Product specification 2002 Oct 28 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND PINNING FEATURES • 600 mW total power dissipation
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M3D302
PMEM4010ND
SCA74
613514/01/pp12
TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE A1
transistor data cd 100
smd code book B3 transistor
MARKING SMD npn TRANSISTOR
pulse to sinewave convertor
smd transistor marking B3
TRANSISTOR SMD MARKING CODE UA
schottky transistor npn
PMEM4010PD
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BB619
Abstract: 552 diode
Text: 711002b G0ba37*ì B3Q I PHIN BB619 VHF VARIABLE CAPACITANCE DIODE The BB619 is a VHF variable capacitance diode in planar technology w ith a very high capacitance ratio intended fo r VHF-band B up to 460 MHz in all-band tuners. The diode is encapsulated in a hermetically sealed SOD 123 plastic envelope suitable fo r surface mounting.
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711002b
BB619
BB619
552 diode
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ingaasp
Abstract: Pulsed Laser 1550nm
Text: DATA SHEET LASER DIODE NDL7564P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7564P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode liber.
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NDL7564P
1550nm
1550nm
NDL7564P
NDL7564P1
b42752S
b427525
ingaasp
Pulsed Laser 1550nm
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BAS32
Abstract: diode bas32 IEC134 BAS32 sod80
Text: 41E D 711002b 00533bt. eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a h e rm e tica lly sealed SOD- 8 O envelope w ith tin -p la te d m etal discsat
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711002b
00533bt.
BAS32
T-03-09
diode bas32
IEC134
BAS32 sod80
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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554S2
4fl55452
10ohm
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Untitled
Abstract: No abstract text available
Text: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.
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bb53c
BAS16
BAW62;
7Z65148
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Untitled
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 002b314 bTE N AMER PHILIPS/DISCRETE APX b3E BAV45 D _ S PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,
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002b314
BAV45
bbS3331
002b317
002b31fl
bbS3T31
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HIGH VOLTAGE DIODE 20kv 1A
Abstract: Pulse generator circuit 20KV DIODE HIGH VOLTAGE DIODE 20kv 20KV TVR-20 0b7b743
Text: AMERICAN/ELECTRONIC b3E J> • 0b7b743 Q001D15 433 mZT>I HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for
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0b7b743
ApproximVR-20
UL94V-0
HIGH VOLTAGE DIODE 20kv 1A
Pulse generator circuit
20KV DIODE
HIGH VOLTAGE DIODE 20kv
20KV
TVR-20
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Untitled
Abstract: No abstract text available
Text: SONY SLD322V High Power Density 0.5 W Laser Diode Description Package Outline U n it: mm The SLD322V is a high power, gain-guided laser diode produced by MOCVD method*1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD322V
SLD322V
SLD300
3fl23fl3
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Untitled
Abstract: No abstract text available
Text: bbS3 T3 i 00 2 b3 ^b 73a h a p x Philips Semiconductors Preliminary specification BB134 UHF variable capacitance diode N AUER PHILIPS/DISCRETE blE J> Q U IC K R E F E R E N C E DATA DESCRIPTION The BB134 is a silicon, double-implanted variable capacitance diode in planar
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BB134
BB134
OD323.
BB135,
MBC780
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Untitled
Abstract: No abstract text available
Text: • bbSBTBl D024415 b3S W A P X N AMER PHI LIP S/DISCRETE BB620 b7E D yv VHF VARIABLE CAPACITANCE DIODE The BB620 is a VHF variable capacitance diode in planar technology w ith a very high capacitance ratio intended fo r VHF-band A up to 160 MHz in all-band tuners.
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D024415
BB620
BB620
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC -CDIODES/OPTOJ i 6367255 M OT O R O L A Im SC ¡>F|b3b7255 D03ÖS4B h |~~ D IO D E S /O P TO 34C 38243 D 7^ 0 3 - C f SOT23 (continued) BAV70 DEVICE NO. SMALL-SIGNAL SWITCHING DIODE T0P VIEW r— « I Common cathode dual diode specially designed for high
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b3b7255
BAV70
BAV70
1505C
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