FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3131 D0Eb471 £4^ « A P X bRE » A BY438 PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The
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bbS3131
D0Eb471
BY438
OD-64.
BY438.
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32F5F361F3D132214DDDC 2313FF36134$6233236 4C3
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DD800S33K2C
03265F
1231423567896AB2C3D6EF32
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F 36%1F&3D132214DDDC 2313FF3613462332364C3
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DD200S33K2C
13265F
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F361F3D132214DDDC 2313FF36134%6233236 4C3 &'6 6 *+ &'6(6 )*+
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DD1200S33K2C
03265F
1231423567896AB2C3D6EF32
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B220
Abstract: B230 B240 B260 CD214A-B220
Text: Features • ■ ■ SMA package Surface mount Very low forward voltage drop CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B220
DO-214AC
e/IPA0303
B220
B230
B240
B260
CD214A-B220
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DO-214
Abstract: do214-ac "General Semiconductor" DO-214AC
Text: PL IA NT Features *R oH S CO M • ■ ■ ■ RoHS compliant* SMA package Surface mount Very low forward voltage drop CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B220
DO-214AC
DO-214
do214-ac
"General Semiconductor" DO-214AC
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Untitled
Abstract: No abstract text available
Text: Data Sheet Customer： Product : Small Signal Schottky Diode-Standard Part No.: B220W-F / B230W-F / B240W-F / B260W-F / B2100W-F B21500W-F/B2200W-F Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH
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B220W-F
B230W-F
B240W-F
B260W-F
B2100W-F
B21500W-F/B2200W-F
11-Jan-11
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"General Semiconductor" DO-214AC
Abstract: B250 220 2 B220 B230 B240 B260 CD214A-B220 marking b240 diode JEDEC DO-214AC PCB layout diode SMA marking code 10
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * SMA package Surface mount Very low forward voltage drop CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode General Information
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CD214A-B220
DO-214AC
choice12
"General Semiconductor" DO-214AC
B250 220 2
B220
B230
B240
B260
CD214A-B220
marking b240 diode
JEDEC DO-214AC PCB layout
diode SMA marking code 10
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"General Semiconductor" DO-214AC
Abstract: B260 DIODE b240 diode B220 B230 B240 B240L B260 marking b240 diode marking 406 diode -rectifier
Text: PL IA NT Features *R oH S CO M • ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount Very low forward voltage drop CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B220
DO-214AC
Bourns12
"General Semiconductor" DO-214AC
B260 DIODE
b240 diode
B220
B230
B240
B240L
B260
marking b240 diode
marking 406 diode -rectifier
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Diode SMA marking code 15
Abstract: General Semiconductor diode marking sma
Text: M PL IA NT Features S CO • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount Very low forward voltage drop CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B220
DO-214AC
Diode SMA marking code 15
General Semiconductor diode marking sma
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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IDTQS34XVH245
Abstract: QS34XVH245
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
80-Pin
34XVH245
IDTQS34XVH245
QS34XVH245
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IDTQS34XVH2245
Abstract: QS34XVH2245 B12 nec diode
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS34XVH2245
32-BIT
10MHz;
80-Pin
34XVH2245
IDTQS34XVH2245
QS34XVH2245
B12 nec diode
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Untitled
Abstract: No abstract text available
Text: M ITEL MP02 XX 260 Series Dual Diode Modules SEMICONDUCTOR Supersedes O ctober 1992 version, 2.0 DS5102-3.0 Decem ber 1998 FEATURES • Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint
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DS5102-3
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Untitled
Abstract: No abstract text available
Text: MITEL MP02 XX 260 Series Dual Diode Modules SEMICONDUCTOR Supersedes O ctober 1992 version, 2.0 DS5102-3.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina non-toxic Isolation Medium
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DS5102-3
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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