DIODE B12
Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1
|
Original
|
ERB12
ERB12-01
ERB12-02
ERB12-04
ERB12-06
ERB12-10
ERB12
DIODE B12
B12 diode
ERB12-02
Diode Mark B12
DIODE 1.0A 1000V
ERB12-10
rectifier diode B12
b12 marking
general purpose diode marking code -06
|
PDF
|
Diode Mark B12
Abstract: B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 ERB12 B12 mark diode marking code B12 DIODE ERB12
Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1
|
Original
|
ERB12
ERB12-01
ERB12-02
ERB12-04
ERB12-06
ERB12-10
ERB12
Diode Mark B12
B12 diode
DIODE B12
marking B12 diode
ERB12-02
ERB12-06
B12 mark
diode marking code B12
DIODE ERB12
|
PDF
|
DIODE B12
Abstract: B12 DIODE MOSFET 800V 3A MOSFET 800V 15A DIODE B12 41 MOSFET 50V 100A TO-220 DIODE B12 48 diode 800v DIODE B12 45 N-channel Power MOSFET
Text: TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 800 4.2 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N80 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This
|
Original
|
TSM3N80
O-220
ITO-220
O-251
O-252
TSM3N80
TSM3N80CH
TSM3N80CP
TSM3N80CZ
O-251
DIODE B12
B12 DIODE
MOSFET 800V 3A
MOSFET 800V 15A
DIODE B12 41
MOSFET 50V 100A TO-220
DIODE B12 48
diode 800v
DIODE B12 45
N-channel Power MOSFET
|
PDF
|
ERB12-02
Abstract: Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10
Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1
|
Original
|
ERB12
ERB12-01
ERB12-02
ERB12-04
ERB12-06
ERB12-10
ERB12
Diode Mark B12
h2 marking
general purpose diode marking code -06
ERB12-10
|
PDF
|
DIODE B12
Abstract: B12 DIODE TSG15N120CN
Text: TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
|
Original
|
TSG15N120CN
TSG15N120CN
30pcs
DIODE B12
B12 DIODE
|
PDF
|
DIODE B12
Abstract: B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak
Text: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.
|
Original
|
TSM8N50
O-251
O-252
TSM8N50CH
75pcs
TSM8N50CP
O-252
DIODE B12
B12 DIODE
marking B12 diode
N-channel 500V mosfet
B12 68 diode
MARKING CODE mosfet
high power diode 500v
TSM8N50
DIODE B12 48
n-channel 250V power mosfet dpak
|
PDF
|
VB11
Abstract: VA1C monitor EHT transformer 0722 456 00014 UL3239 VB11 MARKING 5 PIN Diode Mark B12 3239 TAISHO
Text: BCcomponents DATA SHEET FMP-MLT-17 Focus Metal-glaze Preset for Monitor Line Transformer 17"/19", 28 kV Objective specification Supersedes data of 21st October 1999 File under BCcomponents, BC03 2000 Jul 20 BCcomponents Objective specification Focus Metal-glaze Preset for Monitor Line
|
Original
|
FMP-MLT-17
FMP-MLT-17
HQV-14/001"
10-6/V
10-6/K
HQV-22/002"
PRV-53-8-52/48"
VB11
VA1C
monitor EHT transformer
0722 456 00014
UL3239
VB11 MARKING 5 PIN
Diode Mark B12
3239 TAISHO
|
PDF
|
DIODE B12 51
Abstract: heat exchanger power led heat sink ASM01C020 ASM14 australia heat sink ASM02C040 ASM05C060 44In42Sn14Cd
Text: Industrial Microphotonics Company CW Laser Diode Array Submodules SILVER BULLET TM • Packaged 1, 2, 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm PRODUCT CHARACTERISTICS The Silver BulletTM is a fundamental building block for constructing high-power diode
|
Original
|
785-1064nm)
laser2000
B-12/99
DIODE B12 51
heat exchanger
power led heat sink
ASM01C020
ASM14
australia heat sink
ASM02C040
ASM05C060
44In42Sn14Cd
|
PDF
|
FST1632861
Abstract: IDT74FST1632861
Text: IDT74FST1632861 20-BIT, TWO PORT BUS SWITCH WITH RESISTOR INDUSTRIAL TEMPERATURE RANGE 20-BIT, TWO PORT BUS SWITCH WITH RESISTOR FEATURES: IDT74FST1632861 DESCRIPTION: • • • • Bus switches provide zero delay paths Ω Low switch on-resistance: 28Ω
|
Original
|
IDT74FST1632861
20-BIT,
MIL-STD-883,
200pF,
FST1632861
20-Bit
IDT74FST1632861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IDT74FST1632861 20-BIT, TWO PORT BUS SWITCH WITH RESISTOR INDUSTRIAL TEMPERATURE RANGE 20-BIT, TWO PORT BUS SWITCH WITH RESISTOR FEATURES: IDT74FST1632861 DESCRIPTION: • • • • Bus switches provide zero delay paths Ω Low switch on-resistance: 28Ω
|
Original
|
IDT74FST1632861
20-BIT,
MIL-STD-883,
200pF,
FST1632861
20-Bit
|
PDF
|
con20ap
Abstract: con6a diode M7 con20A fb f10 DIODE P6 K5 FB F13 k9 diode GP12 diode con4ap
Text: 5 4 3 2 1 C3 0.1uF D D RP1 2.7k 3 4 2 1 3 4 U3 SCS2 SSCK SSDO 1 3 R3 SEL 6 8 5 7 Vcc Va Vb Vss PSA0 PSA1 R4 SEL R21 100 SCS2 D3 D2 D1 SDA SCL 32 31 R16 SEL P0.2 P0.3 30 29 P0.4 P0.5 28 27 P0.6 P0.7 AIN0 AIN1 Mon3v3 Mon1v8 26 25 INT 24 PGM INIT DONE CCLK CDOut
|
Original
|
TxDIn9TxDIn10+
TxDIn10TxDIn11+
TxDIn11-
TxD12+
TxD12TxD13+
TxD13TxD14+
TxD14TxD15+
TxD15-
XRT91L82
XRT91L82
con20ap
con6a
diode M7
con20A
fb f10
DIODE P6 K5
FB F13
k9 diode
GP12 diode
con4ap
|
PDF
|
marking B12 diode SCHOTTKY
Abstract: MBRS120T3 marking b12 rectifier diode B12
Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
|
Original
|
MBRS120T3
Re120T3
marking B12 diode SCHOTTKY
MBRS120T3
marking b12
rectifier diode B12
|
PDF
|
marking B12 diode SCHOTTKY
Abstract: MBRS120T3 diode marking code B12
Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
|
Original
|
MBRS120T3
marking B12 diode SCHOTTKY
MBRS120T3
diode marking code B12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF2312 • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2312 is a general purpose, low cost high linearity
|
Original
|
RF2312
RF2312
1000MHz,
001GHz
|
PDF
|
|
|
BU7988KVT
Abstract: DIODE B12 51 TQFP100V Package TA10 TA12 TA16 TQFP100V B12 2N DIODE diode b22 diode td15
Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number
|
Original
|
56bit
BU7988KVT
150MHz
112MHz
224MHz)
TQFP100V
500pcs
08T241A
BU7988KVT
DIODE B12 51
TQFP100V Package
TA10
TA12
TA16
TQFP100V
B12 2N DIODE
diode b22
diode td15
|
PDF
|
AN5337 ca3028
Abstract: AN5337 IC CA 3028A ca3028 CA3028A CA3028AM96 diode L2.8 cascode 120M CA30
Text: Semiconductor CT T ODU CEMEN 7 R P E A 74 T L 7 E OL REP 00-442OBS ENDED 8 1 m s.co MM ions ECO pplicat p@harri R O N ral A centap Cent : Call or email CA3028A January 1999 File Number 382.5 Differential/Cascode Amplifier for Commercial and Industrial Equipment
|
Original
|
CA3028A
120MHz
CA3028A
120MHz.
DifCA3028A
ferenCA3028AE
AN5337 ca3028
AN5337
IC CA 3028A
ca3028
CA3028AM96
diode L2.8
cascode
120M
CA30
|
PDF
|
QS74FCT2X3244
Abstract: No abstract text available
Text: QS74FCT2X3244 3.3V CMOS 16-Bit Buffer/Line Driver Q QUALITY SEMICONDUCTOR, INC. QS74FCT2X3244 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • The FCT2X3244 is a 16-bit buffer/line driver with three-state outputs that is ideal for driving highcapacitance loads as in memory address and data
|
Original
|
QS74FCT2X3244
16-Bit
FCT2X3244
16-bit
AN-001)
QSFCT2X244
2X3244
MDSL-00063-01
QS74FCT2X3244
|
PDF
|
Untitled
Abstract: No abstract text available
Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cG R lc IcM = 20 T oase = 25 /80 °C R ge T oase = 25 /80 °C; tp = 1 ms V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate V V A A V W °C V 1200 1200
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )
|
OCR Scan
|
SKKD15
SKKE15
|
PDF
|
QS74FCT2X2244T
Abstract: QS74FCT2X244T b12a diode DIODE B12 41 A1319
Text: QS74FCT2X240T, QS74FCT2X244T, QS74FCT2X2244T PRELIMINARY Q High Speed CMOS « /• ■ n ■ 16-Bit Buffers/Line Drivers Ìli Q VSO P QS74FCT2X240T qs74fct2X244t QS74FCT2X2244T FEATU R ES/BEN EFITS • • • 16-bit Function compatible to the 74F240/4
|
OCR Scan
|
QS74FCT2X240T,
QS74FCT2X244T,
QS74FCT2X2244T
QS74FCT2X240T
16-Bit
qs74fct2X244t
QS74FCT2X2244T
74F240/4
74ABT240/4
QS74FCT2X244T
b12a diode
DIODE B12 41
A1319
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QS74FCT2X240T, QS74FCT2X244T, QS74FCT2X2244T PRELIMINARY Q High Speed CMOS XX n • rv ■ 16-Bit Buffers/Line Drivers QS74FCT2X240T in QVSOP QS74FCT2X2244T qs74fct2X244t FEATURES/BENEFITS • 16-bit Function compatible to the 74F240/4 74ABT240/4 and 74FCT240/4T
|
OCR Scan
|
QS74FCT2X240T,
QS74FCT2X244T,
QS74FCT2X2244T
16-Bit
QS74FCT2X240T
qs74fct2X244t
QS74FCT2X2244T
74F240/4
74ABT240/4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QS74FCT2X240T, QS74FCT2X244T, QS74FCT2X2244T PRELIMINARY High Speed CMOS 16-Bit Buffers/Line Drivers in QVSOP Ô qs74fct2X244t QS74FCT2X2244T FEATURES/BENEFITS • 16-bit Function compatible to the 74F240/4 74ABT240/4 and 74FCT240/4T • CMOS power levels: <15 mW static
|
OCR Scan
|
QS74FCT2X240T,
QS74FCT2X244T,
QS74FCT2X2244T
16-Bit
qs74fct2X244t
QS74FCT2X2244T
74F240/4
74ABT240/4
74FCT240/4T
|
PDF
|
DIODE B12 41
Abstract: No abstract text available
Text: ÛUALITY SEMIC ONDUCT OR INC bSE D • 7MbfciöD3 GG013H3 TÔ4 QSFCT16244T, QSFCT162244T Advanced Information Ô High Speed CMOS 16-Bit Buffers QS74FCT16244T QS74FCT162244T FEATURES/BENEFITS • • • • 16-bit Function compatible to the 74F244 74FCT244 and 74FCT244T
|
OCR Scan
|
GG013H3
QSFCT16244T,
QSFCT162244T
16-Bit
QS74FCT16244T
QS74FCT162244T
74F244
74FCT244
74FCT244T
DIODE B12 41
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QSFCT2X3244 PRELIMINARY 3.3 Volt CMOS 16-BÌt Ô QS74FCT2X3244 Buffer/Line Driver FEATURES/BENEFITS • • • • • Pin and function compatible to the QSFCT2X244 Available in 40-pin QVSOP Undershoot clamp diodes on all inputs Ground bounce controlled outputs
|
OCR Scan
|
QSFCT2X3244
QS74FCT2X3244
QSFCT2X244
40-pin
FCT2X3244
16-bit
2X3244
2X3244A
DSL-00063-00
|
PDF
|
