Untitled
Abstract: No abstract text available
Text: S TU/D303S S amHop Microelectronics C orp. N ov, 16, 2007 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S -30V R DS ON ID S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
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TU/D303S
O-252AA
O-251
Tube/TO-252
O-252
O-252
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D1855
Abstract: No abstract text available
Text: S T U/D1855P LS S amHop Microelectronics C orp. Aug,18 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable. 73 @ V G S = -10V
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U/D1855P
O-252
O-251
O-252AA
TU/D1855PLS
Tube/TO-252
D1855
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TRANSISTOR D405
Abstract: No abstract text available
Text: 2SD2170 2SC4574 Transistors Medium Power Transistor Motor or Relay drive I 2SD 2170 •A b s o lu te maximum ratings (Ta=25"C ) •F e a tu re s 1 2 3 4 5 6 ) ) ) ) ) ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.
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2SD2170
2SC4574
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
TRANSISTOR D405
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2SD188
Abstract: No abstract text available
Text: 2SB1340 2SD1889 Transistors Power Transistor —120V, —6A 2SB1340 I •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-In resistor between base and emitter. 3 ) Built-In damper diode. 4 ) Complements the 2SD1889. •A b s o lu te maximum ratings (Ta“ 25,C )
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2SB1340
2SD1889
2SD1889.
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
2SD188
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2SK2406
Abstract: EN5251 25K24 SR4F sr 4f
Text: O rdering num ber: EN5251 2SK2406 N-Channel Silicon MOSFET Ultrahigh-Speed Switching, Motor Driver Applications F e a tu re s • Low ON-resistance. • U ltrahigh-speed switching, •High-speed diode. A b so lu te M axim um R a tin g s at Ta=25°C Drain-to-Source Voltage
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EN5251
2SK2406
25K24
SR4F
sr 4f
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Untitled
Abstract: No abstract text available
Text: FEA TU RES & • 3 0 -1 5 0 MHz ■ 25 nSec Switching Speed ■ 4 dB Insertion Loss MODEL D A 077^ B Schottky Diode 7 Section Attenuator ■ 0.1 dB LSB, 12.7 dB Range ■ TTL Control 7 BIT ■ 38 Pin Surface Mount Package IN/OUT 38 GND •«-► GND
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DA0775B
Hz/30
55MHi/40MHz
00G23S0
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2SK1924
Abstract: EN4313
Text: Ordering number: E N 4313 2SK1924 N -C hannel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode trr = 140ns . A b so lu te M axim um R a tin g s at Ta = 25°C Drain-to-Source Voltage
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EN4313
2SK1924
140ns)
2SK1924
EN4313
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Untitled
Abstract: No abstract text available
Text: Transistors UML2N Low-frequency Transistor I UML2N •F e a tu r e s 1 The 2SC2412K and a diode are housed independently in a UMT package. •A b s o lu te m aximum ratings Ta = 25'C) Tr Parameter Symbol Limits Unit VcBO VCEO V ebo ic V V V Pc 60 50 6 0.15
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2SC2412K
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE DIODE 1SS268 Unit in mm V H F TU N ER B A N D S W ITC H A PP LIC A T IO N S -t-azs 1 .5 -a is FEATURES : • Small Package. EI • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance B : rs = 0.6ii (Typ.) M A X IM U M RATIN G S (Ta = 25°C)
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1SS268
SC-59
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2SK1922
Abstract: diode gg 2a
Text: Ordering num ber:EN 4311 _ 2SK1922 No.4311 N -Channel MÖS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. • High-speed diode trr = 100ns . A b s o lu te M ax im u m R a tin g s a tT a = 25°C
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EN4311
2SK1922
100ns)
2SK1922
diode gg 2a
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Untitled
Abstract: No abstract text available
Text: 1SS269 SILICON EPITAXIAL PLANAR TYPE DIODE U nit in mm VH F TU N E R B A N D S W ITCH A PP LIC A TIO N S FEATURES : • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.6fi (Typ.) M A X IM U M R ATIN G S (Ta = 25°C)
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1SS269
SC-59
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BF121
Abstract: No abstract text available
Text: 1SS312 SILICON EPITAXIAL PLANAR TYPE DIODE U nit in mm VHF TU N ER B A N D S W ITCH A PP LIC A T IO N S . • • • Small Package. Small Total Capacitance : C'r = 1.2pF Max. Low Series Resistance : rs = 0.6fl (Typ.) 1. 2 5 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)
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1SS312
SC-70
BF121
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DSB15T
Abstract: DSB15TB DSB15TC DSB15TE DSB15TG DSB15TJ DSB15TL
Text: Ordering number : EN2376 ^ No.2376 1 D S B 15T 1 / IL _ Diffused Junction Type Silicon Diode 1.5A Power Rectifier F e a tu r e s • P lastic molded structure • P eak reverse voltage V r m = —100 to —1000V • A verage rectified cu rren t Io = l-5A A b s o lu te M ax im u m R a tin g s a t Ta ~ 25°C
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EN2376
-100to
DSB15T
DSB15TB
DSB15TC
DSB15TE
DSB15TG
DSB15TJ
DSB15TL
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431i
Abstract: No abstract text available
Text: 2SK1922 A P A dvanced Perform ance Series 2052B V dss = 600V N Channel Power M O S F E T E 431I F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode (trr= 100ns). A b so lu te M axim um R atin g s a tT a = 25°C D rain to Source Voltage
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2SK1922
2052B
100ns)
431i
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DSB015
Abstract: BFl15
Text: Ordering number : EN1186D D S B4 1 5 N 0. I I 86D Silicon E pitaxial P lan ar Type High-Speed Switching Diode F e a tu re s • Ideally suited for use in hybrid ICs because of small-sized package •F ast sw itching speed A b so lu te M axim um R a tin g s a t Ta = 25°C
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EN1186D
II86D
100mA
DSB015
BFl15
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Untitled
Abstract: No abstract text available
Text: 2SK1924 AP A d va n ce d P e rfo rm a n c e S eries V dss = 6 0 0 V 2052B N Channel Power M OSFET .E 43 i 3 F e a tu re s •Low ON resistance. • Very high-speed switching. ■High-speed diode ( tr r = 140ns). A b so lu te M ax im u m R a tin g s a tT a = 25°C
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2SK1924
2052B
140ns)
42893TH
AX-9260
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Untitled
Abstract: No abstract text available
Text: 2SK1925 2056 AP A d va n ce d P e rfo rm a n c e Series V dss = 6 0 0 V IM Channel Power MOSFET 43 U F e a tu r e s • Low ON resistance. • Very high-speed sw itching. •H igh-speed diode (trr= 150ns). b s o lu te M axim u m R a tin g s a tT a = 25°C
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2SK1925
150ns)
X-9260
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Untitled
Abstract: No abstract text available
Text: 2SK1925 AP A d v a n c e d P e rfo rm a n c e Series V dss = 6 0 0 V N Channel Power M OSFET 'I >4314 F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode ( tr r = 150ns). A b so lu te M axim um R a tin g s a tT a = 25°C
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2SK1925
150ns)
2SK1925
50793TI-I
AX-9260
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Untitled
Abstract: No abstract text available
Text: STH61008 1300 nm DFB Laser in Coaxial Package w ith SM-Pigtail, High Power, w ith optical Isolator for 2.5 Gbit/s Application Target specification D im ension s in m m max. 50.5 Absolute Maximum Ratings DESCRIPTION O u tp u t p o w e r ratings refer to the SM fib e r o u tp u t. The
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STH61008
STM-16)
STH61008G
STH61008A
D-13623,
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Untitled
Abstract: No abstract text available
Text: Infineon technologies SEH61008 1300nm DFB Laser in Coaxial Package w ith SM-Pigtail, High Power, w ith optical Isolator for 2.5 Gbit/s Application and adaption board to Butterfly footprint Target specification D im ension s in m m Absolute Maximum Ratings
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SEH61008
1300nm
STM-16)
SEH61008
SEH61008G
SEH61008A
D-13623,
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33153/D ^ MOTOROLA -M C33153 Advance Information Single IGBT G ate Driver The MC33153 is specifcally designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor
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MC33153/D
C33153
MC33153
1PHX36013-0
DCH3751
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1T365
Abstract: No abstract text available
Text: 1T365 sony» Silicon Variable Capacitance Diode D e s c rip tio n The 1 T 3 6 5 is a variable capacitance diode contained in super minature package, and used for electronic-tuning of BS tuner. F e a tu re s • Super minature package • Small capacitance
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1T365
1T365
M-235
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ITC117
Abstract: No abstract text available
Text: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P The Integrated Telecom Circuit series combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications. FEATURES
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ITC117P/ITC135P/ITC137P
3750Vrm
ITC117P/ITC135P/1TC137P
ITC117
P/ITC135
P/ITC137
ITC117P/ITC135P/ITC137P
1-800-CP
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Nippon Pulse Motor pj series
Abstract: hcpl4053 MC33153 AN MC33153 mc33153 IGBT DRIVER pj 0189 diode
Text: Order this document by MC33153/D MOTOROLA Advance Information Sin gle IG B T G ate Driver The MC33153 is specifcally designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving
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MC33153/D
MC33153
Nippon Pulse Motor pj series
hcpl4053
AN MC33153
mc33153 IGBT DRIVER
pj 0189 diode
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