DIODE AR S1 43 Search Results

DO-200AA

Abstract: S15C SD40 SD403C 403C SD-40
Contextual Info: Bulletin I2067 rev. C 04/00 SD403C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 430A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics

IN4*A 752 diode

Contextual Info: C o n d itio n s1> vV 4> AC, 1 min Operating / stor. tem perature —I o o ¡sol Q Sym bol —I SKiiP 642 GH 120 - 2*208 CTV Absolute Maximum Ratings SKiiPPACK Values Units 3000 V -25.+85 °C 1200 900 600 -40.+150 600 1200 4320 93 V V A °C A A A kAs2

Contextual Info: H AR RI S SEMICOND HARRIS^ * ADVANCE INFORMATION SECTOR TS DE | 43Q2271 Q O llS ^a H S -3761R H Radiation Hardened Regulating Pulse Width Modulator Features Applications • • • • • Positive Switching Regulators Negative Switching Regulators Transformer Coupled DC to DC Converters

Contextual Info: Bulletin I2067 rev. C 04/00 SD403C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 430A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics

Contextual Info: AO4840 40V Dual N-Channel MOSFET General Description Product Summary The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V)

ao4832

Contextual Info: AO4832 30V Dual N-Channel MOSFET General Description Product Summary The AO4832 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V)

SD40

Abstract: 403C DO-200AA S15C SD403C
Contextual Info: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability

Contextual Info: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability

Contextual Info: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability

403C

Abstract: DO-200AA S15C SD40 SD403C SD-40
Contextual Info: Bulletin I2067 rev. C 04/00 SD403C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 430A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics

Contextual Info: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability

AOD609

Abstract: aod609 datasheet
Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

diode AR S1 77

Abstract: z645
Contextual Info: S T M8500A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )

Contextual Info: SD403C.C Series Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time • High voltage ratings up to 1600 V • High current capability • Optimized turn-on and turn-off characteristics

Contextual Info: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability

Contextual Info: SD403C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • High power FAST recovery diode series • 1.0 to 1.5 µs recovery time RoHS COMPLIANT • High voltage ratings up to 1600 V • High current capability

Contextual Info: S T M8500A S amHop Microelectronics C orp. J une,08 2006 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 55V 4.5A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V

Contextual Info: 3875081 G E SOLID STATE 01E 1 9 7 92 Optoelectronic Specifications- 37E D HARRIS SENICOND SECTOR • 4302271 00272S4 HAS b T W //.7 3 1mm Aperture Photon Coupled Interrupter Module H 22A 4,H 22A 5,H 22A 6" T he G E Solid S tate H22A Interru p ter M odule is a gallium arse­

operation of sr latch using nor gates

Abstract: TIC 2060 D TIC 2060
Contextual Info: 37E D HARRIS SEfllCOND SECTOR • 4302271 ÜD2b3b4 Ö ■¡HAS - H lg h -R e lla b llity A S IC s PA60000 Series These data sheets are provided fo r technical guidance only. The final device perform ance may vary depending upon the

Contextual Info: VS-SD403C.C Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 430 A FEATURES • • • • • • • • • • • DO-200AA PRODUCT SUMMARY High power FAST recovery diode series 1.0 µs to 1.5 µs recovery time High voltage ratings up to 1600 V

Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AN7421

Abstract: AN-742 C1996 DS3875 DS3883A DS3884A DS3885 DS3886A diode AR S1 86 transistor ab2 12
Contextual Info: National Semiconductor Application Note 742 Chai Vaidya IPG Applications January 1991 INTRODUCTION Today’s digital systems with their higher clock speeds and data throughput must have higher transfer rates to keep the processors running at top speed With these types of circuits it is essential to have high performance bus transceivers which tie together everything on the bus Without specialized bus interface transceivers board designers must

Diode SMD ED 9a

Abstract: IRF7504 diode AR s1 52 smd rectifier diode code S1 16 soic smd pcb footprint
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD - 9.1267D IRF7504 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching