900 mhz schottky diode
Abstract: bat 62 diode MHz rectifier Q62702-A971 marking code 62 3 pin diode marking code js 3 pin diode
Text: Silicon Schottky Diode BAT 62 ● Low barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration tape and reel Package1) BAT 62 62 Q62702-A971
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Q62702-A971
OT-143
900 mhz schottky diode
bat 62 diode
MHz rectifier
Q62702-A971
marking code 62 3 pin diode
marking code js 3 pin diode
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Q62702-A919
Abstract: MARKING 54 "Pin Diode"
Text: Silicon Low Leakage Diode BAS 116 Low-leakage applications ● Medium speed switching times ● Single diode ● Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit
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Q62702-A919
OT-23
Q62702-A919
MARKING 54 "Pin Diode"
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marking code js
Abstract: BAS116 low-leakage silicon diode Q62702-A919 MARKING 54 "Pin Diode"
Text: Silicon Low Leakage Diode BAS 116 Low-leakage applications ● Medium speed switching times ● Single diode ● 2 3 1 Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values
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Q62702-A919
OT-23
marking code js
BAS116
low-leakage silicon diode
Q62702-A919
MARKING 54 "Pin Diode"
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code marking JYs sot-23
Abstract: Q62702-A921 JYs transistor low-leakage silicon diode DIODE BAV JS v JYS SOT-23
Text: Silicon Low Leakage Diode Array BAV 199 Low-leakage applications ● Medium speed switching times ● Connected in series ● Type Marking Ordering Code tape and reel BAV 199 JYs Q62702-A921 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter
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Q62702-A921
OT-23
code marking JYs sot-23
Q62702-A921
JYs transistor
low-leakage silicon diode
DIODE BAV JS v
JYS SOT-23
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Q62702-A988
Abstract: A988 DIODE BAT Code 035 on semiconductor JS marking diode
Text: Silicon Schottky Diode BAT 66-05 Preliminary Data Low-power Schottky rectifier diode ● For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes ● Type Marking Ordering Code tape and reel BAT 66-05 BAT 66-05 Q62702-A988
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Q62702-A988
OT-223
Q62702-A988
A988
DIODE BAT
Code 035 on semiconductor
JS marking diode
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code marking JYs sot-23
Abstract: marking jys Q62702-A921 JYs marking transistor BAV199
Text: Silicon Low Leakage Diode Array BAV 199 Low-leakage applications ● Medium speed switching times ● Connected in series ● 2 3 1 Type Marking Ordering Code tape and reel BAV 199 JYs Q62702-A921 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode
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Q62702-A921
OT-23
code marking JYs sot-23
marking jys
Q62702-A921
JYs marking transistor
BAV199
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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A940
Abstract: a940 Transistor transistor a940 DIODE BAT Q62702-A940 BAT18 A938 A942 Q62702-A787 Q62702-A938
Text: BAT 18 Silicon RF Switching Diode BAT 18 … ● Low-loss VHF/UHF switch above 10 MHz ● Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 BAT 18-04 AU Q62702-A938 BAT 18-05 AS Q62702-A940
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Q62702-A787
Q62702-A938
Q62702-A940
Q62702-A942
A940
a940 Transistor
transistor a940
DIODE BAT
Q62702-A940
BAT18
A938
A942
Q62702-A787
Q62702-A938
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diode MARKING A9
Abstract: diode MARKING CODE A9 smd diode a9 smd code marking WV SMD MARKING CODE s4 BAP70-03 diode marking code 77 smd diode code A9
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Mar 25 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators
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M3D319
BAP70-03
MAM406
OD323
OD323)
SCA73
125004/04/pp6
diode MARKING A9
diode MARKING CODE A9
smd diode a9
smd code marking WV
SMD MARKING CODE s4
BAP70-03
diode marking code 77
smd diode code A9
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BAP70-03
Abstract: DIODE SMD A9 diode MARKING A9
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators
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M3D319
BAP70-03
MAM406
OD323
OD323)
SCA73
125004/04/pp6
BAP70-03
DIODE SMD A9
diode MARKING A9
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LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS75B12N3E4
428654F4
D3265
ECFC24
B32DC
CD3289
ECFC26
B32DC6
C36B3
1231423567896AB
LTC4098-3.6
A20-LCD15.6
SXA-01GW-P0.6
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AL6G
Abstract: No abstract text available
Text: Technische Information / technical information IFS75B12N3E4_B39 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS75B12N3E4
AL6G
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diode MARKING CODE A9
Abstract: diode MARKING A9 smd diode a9 smd diode marking A9 BAP70-03 SC-76 MARKING 54 "Pin Diode" smd diode marking 77
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAP70-03 Silicon PIN diode Product specification Supersedes data of 2002 Aug 06 2004 Feb 10 Philips Semiconductors Product specification Silicon PIN diode BAP70-03 FEATURES PINNING • High voltage, current controlled RF resistor for
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BAP70-03
sym006
OD323
SC-76)
OD323;
SCA76
R77/04/pp7
diode MARKING CODE A9
diode MARKING A9
smd diode a9
smd diode marking A9
BAP70-03
SC-76
MARKING 54 "Pin Diode"
smd diode marking 77
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a9g marking
Abstract: BAS20-V-G 23-Nov-10 BAS21-V
Text: BAS19-V-G, BAS20-V-G, BAS21-V-G Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon epitaxial planar diode • Fast switching diode in case SOT-23, especially suited for automatic insertion • General purpose switching applications
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BAS19-V-G,
BAS20-V-G,
BAS21-V-G
OT-23,
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
18/10K
10K/box
a9g marking
BAS20-V-G
23-Nov-10
BAS21-V
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 i-o 3 o1-0
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Q62702-A919
OT-23
023Sb05
235b05
015030b
535b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode B A T 62 • Low barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 62 62 Q62702-A971 Pin Configuration
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Q62702-A971
OT-143
EHA0702Q
H35b05
D120352
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JVs sot23
Abstract: BAS116
Text: SIEM EN S Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 ° °- ^ 1-EHA07002
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Q62702-A919
OT-23
1--------EHA07002
JVs sot23
BAS116
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BAS116
Abstract: No abstract text available
Text: Silicon Low Leakage Diode BAS116 • Low Leakage applications • Medium speed switching times • Single diode Type M arking O rdering code 8-m m tape Package BAS116 JVs Q62702-A919 SOT 23 Maximum Ratings D escription BAS116 Symbol U nit Reverse voltage Peak reverse voltage
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BAS116
Q62702-A919
BAS116
100ns
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Untitled
Abstract: No abstract text available
Text: DIODE M ODULE DD200GB ULIE76102 M Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 800 V
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DD200GB
ULIE76102
DD200GB
DD200GB-40
DD200GB-80
0D020bl
00020b2
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ESJA92
Abstract: ESJA92-10 T151 high voltage diode 100 kv esja 212es 12KV 2ma
Text: ESJ A92 1 O k v , 1 2 k V : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA92i±p ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features
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ESJA92
ESJA92lÂ
I95t/R89)
Shl50
ESJA92-10
T151
high voltage diode 100 kv
esja
212es
12KV 2ma
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EHA07005
Abstract: EHA07002
Text: SIEM ENS Silicon RF Switching Diode BAT 18. • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code BAT 18 A2 Q62702-A787 Pin Configuration Package1 SOT 23 0- EH1-» EHA07002 BAT 18-04 AU Q62702-A938
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Q62702-A787
EHA07002
Q62702-A938
Q62702-A940
EHA07005
Q62702-A942
CHA07004
EHA0700Í
EHA07005
EHA07002
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel B A V 199 JY s Q62702-A921 Pin Configuration Package1) 3 SOT-23 EHA07005 Maximum Ratings per Diode
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Q62702-A921
OT-23
EHA07005
fl535bOS
D1ED421
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Untitled
Abstract: No abstract text available
Text: ERE24* ERE74 2 oa FAST RECOVERY DIODE I Features • Glass passivated chip • 7 *9 vj Y16 Stud mounted : Applications + .T A 'V l - 's y ^ 31 • ?-3 'y '< — Switching power supplies Free-wheel diode fr 'fJ ir • •' <7— Snubber diode • Others. Maximum Ratings and Characteristics
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ERE24*
ERE74
I95t/R89)
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Untitled
Abstract: No abstract text available
Text: ESJ A9 8 6 k V 8 , k V : Outline Drawings HIGH VOLTAGE SILICO N DIODE E S JA 9 8 (i, -yT'5:1 l- T iijh L fc E S JA 9 8 is high reliability resin molded type high seepd high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.
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S30S3*
95t/R89
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