DIODE A50 Search Results

thyristor control arc welding rectifier circuit

Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150

1M5378B

Contextual Info: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C

pin diodes radiation detector

Abstract: d2 diode series Microwave PIN diode DIODE RF DETECTOR PIN DIODE DRIVER CIRCUITS uhf circulator PIN DIODE SPDT DRIVER CIRCUITS HIGH POWER ANTENNA SWITCH PIN DIODE PIN DIODE pin diode limiter
Contextual Info: Application note Design With PIN Diodes The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device whose impedance, at these frequencies, is controlled by its DC excitation. A unique feature of the PIN diode is its ability to control large amounts of RF power

cl6d

Contextual Info: M GE D FASCO 3 4 clci73ô 0QQ105S INDS/ b E 3 SENI SENISYS CLED1 CLED1A CLED1B CLED1C ± .0 0 5 -.210 DIA± .0 0 7 -.183 DIAWINDOW ±.011 .147 OIA Gallium Arsenide Infrared Emitting Diode ±.010 .200 GENERAL DESCRIPTION — The Clairex CLED1 is a Gallium Arsenide infrared emitting diode in a lensed

Contextual Info: SIEMENS Silicon Dual Schottky Diode BAT 15-04 Features • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type 5:1 Type Ordering Code ' tape and reel BAT 15-04 Pin Configuration 1 2 Marking Package S8 SOT-23 3 | Q62702-A504 Maximum Ratings

S8 MARKING ON SOT23 PACKAGE

Abstract: Diode SOT-23 marking s8 DBS SOT23 MARKING CODE marking code js 3 pin diode diode MARKING CODE 930 diode 1504 JS marking diode marking s8 diode Js MARKING CODE SOT23 TA 1504
Contextual Info: BAT 15-04 Silicon Dual Schottky Diode ● ● ● DBS mixer applications to 12 GHz Low noise figure Low barrier type Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 Package BAT 15-04 Q62702-A504 A SOT-23 – C S8 Maximum Ratings Parameter

Q62702-A777

Contextual Info: SIEM ENS Silicon Schottky Diode BAT 17. • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT BAT BAT BAT 17 17-04 17-05 17-06 Ordering Code tape and reel Pin Configuration Marking 1 2 3 Package Q62702-A504 Q62702-A775 Q62702-A776

Contextual Info: SIEMENS B AT 17. Silicon Schottky Diode • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT BAT BAT BAT 17 17-04 17-05 17-06 Ordering Code Pin Configuration Marking tape, and reel 1 2 3 Q62702-A504 Q62702-A775 Q62702-A776

A777

Abstract: sot-23 a777 Q62702-A776 DIODE BAT sot-23 marking code Q62702-A504 Q62702-A775 Q62702-A777 MARKING 54 "Pin Diode"
Contextual Info: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777

DIODE BAT 17

Abstract: A777 DIODE BAT Q62702-A777 Q62702-A504 Q62702-A775 Q62702-A776 MARKING 54 "Pin Diode" cu marking code diode Q62702-A77
Contextual Info: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

BY 255 diode

Abstract: diode 77 radial lead IDL41 IN3501
Contextual Info: SEMITRON INDUSTRIES LTD 43E D H 013700«? 000017^ 0 B S L C B SERIES Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS Semitron Certified Semiconductor Reference Diodes are intended for use as a robust and reliable standard voltage. They can replace

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

Contextual Info: 43E T> SEMITRON INDUSTRIES LTD 013760*1 D000177 7 BISLCB IN4890-4895A series Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS GLASS D07 • This series of Semitron 400 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured

zener diode A36

Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

MG15G6EM1

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG15G6EM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG50G2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

zener diode A29

Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

Philips fr 153 30

Contextual Info: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.

Contextual Info: SEMITRON INDUSTRIES LTD H3E D • fliaTflftR 000015R S B S L C B BZY9IIZ6 S E R I E S Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F081 ■Voltage Range 3V6 to 200 Volts 75 Watt Steady State ■ 5000 Watt Peak Power APPLICATIONS

IN5827

Abstract: IN5826 1N5826 1N5827 1N5828
Contextual Info: 1N5826 1N5827 1N5828 ‘0 HOT CARRIER POWER RECTIFIER .,. employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage,

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

BZY95C12

Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
Contextual Info: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power

z0b07

Abstract: Z4618 z4843
Contextual Info: SEMITRON INDUSTRIES LTD M3E » • aiaîsas DDQOISS 8 H S L C B Z0/Z4 SERIES Hermetically Sealed Package ■Voltage Regulator Diode Released to BS 9305-F078 3 - 200 Volts ■Voltage Range 3VO to 400 Volts 1 Watt Steady State ■400 Watt Peak Power APPLICATIONS