DIODE A2 MARKING Search Results

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

Marking a1s

Abstract: BAW56W VSO05561
Contextual Info: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV70W

Abstract: VSO05561 10TSV
Contextual Info: BAV70W Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

BAW56U

Abstract: SC74
Contextual Info: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration

STPS20

Contextual Info: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode

Contextual Info: STPS30SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS30SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode

Contextual Info: STPS20M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20M60C is a dual diode Schottky rectifier, suited for high frequency switch mode

STTH602CBY

Contextual Info: STTH602C-Y Automotive ultrafast recovery diode Datasheet  production data Features • Suited for SMPS ■ Low losses A1 ■ Low forward and reverse recovery time A2 ■ High surge current capability ■ High junction temperature K Description A2 K This dual center tap diode is suited for switch

Contextual Info: STTH1002C High efficiency ultrafast diode Datasheet - production data Features A1 • Suited for SMPS K A2  Low losses  Low forward and reverse recovery times  Insulated package: TO-220FPAB  High junction temperature  Low leakage current A2

Contextual Info: STTH1002C-Y Automotive high efficiency ultrafast diode Features A1 • Suited for SMPS K A2 ■ Low losses ■ Low forward and reverse recovery times ■ High junction temperature ■ Low leakage current ■ AEC-Q101 qualified K K K A2 K A1 Description DPAK

STTA9012TV1

Abstract: STTA9012TV2
Contextual Info: STTA9012TV1/2  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 45A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA9012TV1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE

STTA12006TV1

Abstract: STTA12006TV2 STTA6006P TRANSISTOR mosfet k2
Contextual Info: STTA6006P STTA12006TV1/2  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 60A / 2 x 60A VRRM 600V trr (typ) 45ns VF (max) 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA12006TV1 STTA12006TV2 FEATURES AND BENEFITS SPECIFICTO ”FREEWHEEL MODE”OPERATIONS:

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage

marking 6c1

Abstract: BAS16U SC74
Contextual Info: BAS16U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

STTA3006P

Abstract: STTA3006PI STTA6006P STTA6006TV1 STTA6006TV2
Contextual Info: STTA3006P/PI STTA6006TV1/2 TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 30A / 2 x 30A VRRM 600V trr (typ) 35ns VF (max) 1.5V FEATURES AND BENEFITS K2 A2 A2 K1 K1 A1 K2 A1 STTA6006TV1 SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:

BAW56 application note

Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Contextual Info: BAW56 Silicon Switching Diode Array 3
For high-speed switching applications
Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR

BAV70

Contextual Info: BAV70 Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV99

Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

STTA9012TV1

Abstract: STTA9012TV2
Contextual Info: STTA9012TV1/2 TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2 x 45A VRRM 1200V trr (typ) 65ns VF (max) K2 A2 K1 A1 STTA9012TV1 1.85V A2 K1 K2 A1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN

STTA2512P

Abstract: STTA5012TV1 STTA5012TV2
Contextual Info: STTA2512P STTA5012TV1/2 TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 25A VRRM 1200V trr (typ) 60ns VF (max) K2 A2 K1 A1 STTA5012TV1 1.9V A2 K1 K2 A1 STTA5012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN

L30 dual diode

Contextual Info: STPS20200C Power Schottky diode Datasheet  production data Features Diode 1 • Low forward voltage drop A1  Very small conduction losses K Diode 2  Negligible switching losses A2  Extremely fast switching  Low thermal resistance K  -40°C minimum operating Tj

BBY 52

Contextual Info: BBY 52 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 52 S5s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23

BBY53

Contextual Info: BBY53 3 Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation 2 for VCOs in mobile communications equipment
High ratio at low reverse voltage Type BBY53 Marking S7s 1 Pin Configuration 1 = A1 2 = A2 3 = C1/2