Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
|
Original
|
STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
|
Original
|
STPSC12H065C
O-220AB
STPSC12H065CT
DocID024809
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
|
Original
|
STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
|
Original
|
STPSC8H065C
O-220AB
STPSC8H065CT
DocID024808
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
|
Original
|
STPSC20H065C
O-220AB
STPSC20H065CT
DocID023605
|
PDF
|
Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
|
Original
|
BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
|
PDF
|
STPS20
Abstract: No abstract text available
Text: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
|
Original
|
STPS20SM60C
STPS20SM60C
O-220AB,
O-220FPAB,
STPS20SM60CG-TR
STPS20SM60CR
O-220AB
STPS20SM60CT
O-220FPAB
STPS20SM60CFP
STPS20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPS20SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
|
Original
|
STPS20SM60C
STPS20SM60C
O-220AB,
O-220FPAB,
O-220AB
STPS20SM60CT
O-220FPAB
STPS20SM60CFP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPS40SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS40SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
|
Original
|
STPS40SM60C
STPS40SM60C
STPS40SM60CG-TR
STPS40SM60CR
O-220AB,
O-220AB
STPS40SM60CT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPS30M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS30M60C is a dual diode Schottky rectifier, suited for high frequency switch mode
|
Original
|
STPS30M60C
STPS30M60C
STPS30M60CG-TR
STPS30M60CR
O-220AB,
O-220AB
STPS30M60CT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPS30SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS30SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode
|
Original
|
STPS30SM60C
STPS30SM60C
STPS30SM60CG-TR
STPS30SM60CR
O-220AB,
O-220AB
STPS30SM60CT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPS20M60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20M60C is a dual diode Schottky rectifier, suited for high frequency switch mode
|
Original
|
STPS20M60C
STPS20M60C
STPS20M60CG-TR
STPS20M60CR
O-220AB,
O-220AB
STPS20M60CT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-20W-A2-F-10-c-l-22 BLD-94-tt-20W-A2-F-10-c-l-22 BLD-98-tt-20W-A2-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
|
Original
|
BLD-91-tt-20W-A2-F-10-c-l-22
BLD-94-tt-20W-A2-F-10-c-l-22
BLD-98-tt-20W-A2-F-10-c-l-22
|
PDF
|
SC75
Abstract: BAV70T
Text: BAV70T Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
BAV70T
VPS05996
EHA07179
Aug-24-2001
EHB00068
EHB00065
SC75
BAV70T
|
PDF
|
|
|
bav99w A7S
Abstract: BAV99W VSO05561
Text: BAV99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
BAV99W
VSO05561
EHA07181
OT323
Aug-20-2001
EHB00078
EHB00075
bav99w A7S
BAV99W
VSO05561
|
PDF
|
Marking a1s
Abstract: BAW56W VSO05561
Text: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
BAW56W
VSO05561
EHA07187
OT323
Jun-29-2001
EHB00093
EHB00090
Marking a1s
BAW56W
VSO05561
|
PDF
|
BAV70W
Abstract: VSO05561 10TSV
Text: BAV70W Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
BAV70W
VSO05561
EHA07179
OT323
Jul-06-2001
EHB00068
EHB00065
BAV70W
VSO05561
10TSV
|
PDF
|
STTH602CBY
Abstract: No abstract text available
Text: STTH602C-Y Automotive ultrafast recovery diode Datasheet production data Features • Suited for SMPS ■ Low losses A1 ■ Low forward and reverse recovery time A2 ■ High surge current capability ■ High junction temperature K Description A2 K This dual center tap diode is suited for switch
|
Original
|
STTH602C-Y
STTH602CBY-TR
STTH602CBY
|
PDF
|
VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
|
PDF
|
STTA5012TV1
Abstract: STTA5012TV2
Text: STTA5012TV1/2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 25A VRRM 1200V trr (typ) 60ns VF (max) 1.9V K2 A2 A2 K1 K1 A1 K2 A1 STTA5012TV1 STTA5012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE
|
Original
|
STTA5012TV1/2
STTA5012TV1
STTA5012TV2
STTA5012TV1
STTA5012TV2
|
PDF
|
STTA9012TV1
Abstract: STTA9012TV2
Text: STTA9012TV1/2 TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 45A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA9012TV1 STTA9012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE
|
Original
|
STTA9012TV1/2
STTA9012TV1
STTA9012TV2
STTA9012TV1
STTA9012TV2
|
PDF
|
BAW56U
Abstract: SC74
Text: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration
|
Original
|
BAW56U
VPW09197
EHA07288
Jun-29-2001
EHB00093
EHB00090
BAW56U
SC74
|
PDF
|
6A1 diode
Abstract: BAW56S VPS05604
Text: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s
|
Original
|
VPS05604
EHA07288
OT-363
Oct-08-1999
EHB00093
EHB00090
6A1 diode
BAW56S
VPS05604
|
PDF
|
BAW56S
Abstract: 6A1 diode VPS05604
Text: BAW56S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Common anode Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration
|
Original
|
BAW56S
VPS05604
EHA07288
OT363
Jul-05-2001
EHB00093
EHB00090
BAW56S
6A1 diode
VPS05604
|
PDF
|
