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    DIODE A118 Search Results

    DIODE A118 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE A118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE A118

    Abstract: K0024
    Text: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    DIODE A118

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    DIODE A118

    Abstract: 8199E "RECTIFIER DIODE"
    Text: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    PDF A118/99 DIODE A118 8199E "RECTIFIER DIODE"

    DIODE A118

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung


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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1182A ECH8308 P-Channel Power MOSFET http://onsemi.com –12V, –10A, 12.5mΩ, Single ECH8 Features • • • Best suited for load switching 1.8V drive Protection diode in • • Low ON-resistance Halogen free compliance Specifications


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    PDF ENA1182A ECH8308 PW10s, 900mm2 A1182-7/7

    Untitled

    Abstract: No abstract text available
    Text: ECH8308 Ordering number : ENA1182A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8308 General-Purpose Switching Device Applications Features • • • Best suited for load switching 1.8V drive Protection diode in • • Low ON-resistance Halogen free compliance


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    PDF ECH8308 ENA1182A 900mm2Ã A1182-7/7

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    Abstract: No abstract text available
    Text: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor


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    PDF ENA1185A ECH8664R PW10s, 900mm2 A1185-7/7

    Untitled

    Abstract: No abstract text available
    Text: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor


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    PDF ECH8664R ENA1185A A1185-7/7

    Untitled

    Abstract: No abstract text available
    Text: ECH8663R Ordering number : ENA1184A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor


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    PDF ECH8663R ENA1184A A1184-7/7

    Untitled

    Abstract: No abstract text available
    Text: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor


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    PDF ENA1185A ECH8664R PW10s, 900mm2 A1185-7/7

    Untitled

    Abstract: No abstract text available
    Text: ECH8663R Ordering number : ENA1184A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor


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    PDF ECH8663R ENA1184A A1184-7/7

    Untitled

    Abstract: No abstract text available
    Text: ECH8663R Ordering number : ENA1184A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor


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    PDF ENA1184A ECH8663R PW10s, 900mm2 A1184-7/7

    Untitled

    Abstract: No abstract text available
    Text: ECH8663R Ordering number : ENA1184A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor


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    PDF ENA1184A ECH8663R PW10s, 900mm2 A1184-7/7

    Untitled

    Abstract: No abstract text available
    Text: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor


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    PDF ECH8664R ENA1185A A1185-7/7

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1184A ECH8663R N-Channel Power MOSFET http://onsemi.com 30V, 8A, 20.5mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch


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    PDF ENA1184A ECH8663R 900mm2Ã A1184-7/7

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 (May, 2008) SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


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    PDF O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751

    triac zd 607

    Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
    Text: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes


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    PDF The32-246622 H1-O03EA0-0510020NM triac zd 607 transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A

    transistor BU 102S

    Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
    Text: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China


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    PDF H1-O03EE0-1004015ND transistor BU 102S fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096

    SSC9512

    Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
    Text: Bulletin No O03EH0 (Mar, 2013) Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China


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    PDF O03EH0 STR-X6768N TMA256B-L STR-X6769 TMB166S-L STR-X6769B TMB206S-L STR-Y6453 VR-60SS STR-Y6456 SSC9512 STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based

    Q68000A1185

    Abstract: bav99
    Text: BAV99 Silicon Switching Diode Array For high-speed switching Connected in series C2.A1 Type 0 BAV 99 Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package A7 Q68000-A1185 Q68000-A549 SOT 23 Maximum ratings per diode Parameter


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    PDF BAV99 Q68000-A1185 Q68000-A549 Q68000A1185 bav99

    A116 diode

    Abstract: DIODE A116 as 15-f DIODE A118 AP-222 diode smd6 44
    Text: Introduction Diode array summary see page 227 Part number DC reverse voltage V r (V) Mean rectifying current l0 (mA) Reverse Terminal recovery time capacitance (max) trr (ns) CT (PF) Package type Circuit diagram High speed switching diode arrays FMN1 80


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    PDF IMN11 IMP11 DAN209S DAN215 DAN803 DAP209S DAP215 AP401 AN403 AP601 A116 diode DIODE A116 as 15-f DIODE A118 AP-222 diode smd6 44

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    DIODE A118

    Abstract: No abstract text available
    Text: DF100AA120/160 UL;E76102 M Power Diode Module D F 1 0 0 AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink


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    PDF DF100AA120/160 E76102 DF100AA120 DF100AA160 DIODE A118

    Ry110

    Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
    Text: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #


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    PDF QD0D013 534-61S1 A1D207A A1D207E A1E207A A1E207E A1A210D A1A210E A1B210D A1B210E Ry110 diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717