DIODE 98E Search Results

98E-04

Contextual Info: U-LD-98E046D-preliminary UNION OPTRONICS CORP. 980nm Laser Diode 980nm Laser Diode U-LD-98E046D-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-5(ψ9.0mm), With Pb free glass cap, no PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

74LS115

Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Contextual Info: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con­ necting first darlington emitter to output should have series resistor. LS33 5-25

785Nm

Abstract: infra red diode 785nm diode PL78T040FC2D-T-0 TO 5.6mm package
Contextual Info: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Near Infra Red Series of laser diodes. These units are available in ready-to-use, fibercoupled packages, including FC, ST, and SC receptacles, as well as fiberpigtailed units.

IR Laser diode

Contextual Info: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging op tions for its’ Near Inf ra Red Series of laser diodes. These units are a vailable in read y-to-use, f ibercoupled pa ckages, including FC, ST, and SC rece ptacles, as well as f iberpigtailed units.

VRM Section of laptop Motherboard

Abstract: heat sensor with fan cooling working laptop processor socket pin out PGA423 Acoustics Cache Intel Pentium 4 Processors G749 outline of the heat sink for Theta JC laptop motherboard circuits elements 423-pin
Contextual Info: Intel Pentium® 4 Processor In the 423-pin Package Thermal Design Guidelines ORDER NUMBER: 249203-001 NOVEMBER, 2000 Pentium® 4 processor in the 423-pin package Thermal Design Guidelines Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

Contextual Info: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mΩ VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant

Contextual Info: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant

262E-9

Contextual Info: J W S Semiconductor RFG40N10LE, RFP40N10LE, RF1S40N10LESM I Data Sheet April 1999 40A, 100V, 0.040 Ohm, ESD Protected, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

98E580

Contextual Info: LF PA K 56 BUK9Y8R5-80E N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

Contextual Info: LF PA K 56D BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101

Contextual Info: LF PA K 56 BUK9Y8R7-60E N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

c5447

Contextual Info: 1234345 SoloLIN Transceiver 6789AB7C5 1 Compatible to LIN Specification Version 1.3 and 2.0 1 Compatible to ISO9141 functions 1 Baud rate up to 20 kBaud 1 Operating voltage VS = 7 to 18 V 1 Low current consumption of typ. 24µA 1 Wake-up via LIN bus traffic

75329d

Abstract: TA75329 HUF75329D3
Contextual Info: HUF75329D3, HUF75329D3S Semiconductor Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75339p

Abstract: 75339g TA75339 75339 HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 504E3
Contextual Info: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

298348

Abstract: ShineTsu G-749 testing motherboards components using multimeter Diode BAY 451 VRM Section of laptop Motherboard straight flex zif connector G749 circular thermocouple connector automatic room power saving system using PIR hand movement based fan speed control
Contextual Info: R Intel Xeon Processor Thermal Design Guidelines May 2001 Order Number: 298348-001 ® Intel Xeon™ Processor Thermal Design Guidelines R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

Contextual Info: SKHIT 01 R . Absolute Maximum Ratings Symbol Conditions 4% K LM NBO >(9'77 8&J';I<7' 7$'5<?<': 3789%&<8( &'7& H89&%E' <($>& F 8>&$>& AL 7'5Q RBD S$';%&<(E &'@$';%&>;' 0&8;%E' &'@$';%&>;' Characteristics Symbol Conditions TM SEMIDRIVER Thyristor driver for three

F1S50N06

Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
Contextual Info: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model

54B65

Abstract: 596B5
Contextual Info: MLX90121 13.56MHz RFID Transceiver Features and Benefits 1 1 1 1 Applications 1 Conforms with ISO14443B Conforms with ISO15693 Programmable encoder and decoder Low external component count (1) RATP / Innovatron 1 1 1 1 Portable data terminals Access control readers

Contextual Info: RF1K49088 HARRIS S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 3.5A, 30V The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

A13H

Abstract: DS41440 B13H a9ah A97h PIC16F1829LIN D98h pic16f1829 SAE J2602 transceiver IR 412H
Contextual Info: PIC16F1829LIN 20-Pin, 8-bit Flash LIN/J2602 Microcontroller Cross-Referenced Material: Special Microcontroller Features: This data sheet refers heavily on the following Microchip data sheets: • Self-Programmable under Software Control • Power-on Reset POR , Power-up Timer (PWRT)

Temic Semiconductors acceleration

Abstract: spindle and VCM motor controller sh ac motor speed control circuit diagram with calcu
Contextual Info: AN711 TEMIC S e m i c o n d u c t o r s HDD Servo Design Using the SÌ9990CS Introduction S m all-fo rm factor hard disk drive H D D rotating m em o ries place several d ifficult c o n strain ts on the d esig n ers o f servo m ech an ism s fo r head p o sitio n in g and

SM 630 finger print module

Abstract: mitsumi Switching Power Supply sr 345 pa-1700-02 Epson DX4 CIRCUIT ic25n020atcs04 panasonic inverter dv 700 7 amp. manual mk2018gap panasonic inverter dv 700 manual Manual panasonic inverter dv 700 ujda340
Contextual Info: TravelMate 630 Service Guide Service guide files and updates are available on the CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 91 .43U01.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Travelmate 630 service guide.

IA64F3048SEC2

Abstract: IA64F3048SEC FFF49 8ch DARLINGTON TRANSISTOR ARRAY DSR 505 innova card PRO NE 226 A21E A22E A23E
Contextual Info: IA64F3048SEC2 Security-Enhanced Microcontroller 2.5 V User’s Manual Document Number IA221081001-00 Production Version 00 IA64F3048SEC2 2 Notices NOTE When displayed electronically, this manual best viewed at 120% magnification. September 2008 The information in this manual has been carefully checked and is believed to be accurate; however, Innovasic