DIODE 91 Search Results
DIODE 91 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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DIODE 91 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no. |
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1N5408 | |
HSCH-9161
Abstract: HSMS-2850 United Detector silicon diode
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HSCH-9161 HSCH-9161 5988-5907EN 5988-6209EN March31, HSMS-2850 United Detector silicon diode | |
1gg5
Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
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HSCH-9161 HSCH-9161 HSCH-9161/rev 1gg5 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode | |
HSCH-9161
Abstract: United Detector silicon diode application note 979
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HSCH-9161 HSCH-9161 5988-6209EN AV02-3625EN United Detector silicon diode application note 979 | |
Contextual Info: Vishay Intertechnology, Inc. DIODE AND THYRISTOR MODULES ADD-A-PAK TO-240AA MODULES Up to 105 A, 1600 V, New Generation 7, Diode-Diode and Diode-SCR Configurations Available INT-A-PAK (34 MM) MODULES Up to 165 A, 1600 V, Diode-Diode and Diode-SCR Configurations |
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O-240AA) OT-227 VMN-MS6956-1408 | |
N40 DIODE
Abstract: HSCH-9161 PB26 farad PARALLEL CAPACITOR CAP-12 diode N40
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HSCH-9161 September1998 12E-6 30E-15 84E-6 HP9161 N40 DIODE PB26 farad PARALLEL CAPACITOR CAP-12 diode N40 | |
DIODE 914
Abstract: eeds Low Leakage Diode SMD Diode 631
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OD-523 OT-563 OD-323 OT-363 OT-23 OT-26 DIODE 914 eeds Low Leakage Diode SMD Diode 631 | |
Contextual Info: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature |
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HSCH-9161 HSCH-9162 HSCH-916x HSCH916x 5989-6228EN | |
Contextual Info: 1N 914 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted. |
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DO-34, DO-35 | |
TC611 Diode Model
Abstract: AGILENT TECHNOLOGIES 9161 AGILENT TECHNOLOGIES 9162 gamma detector tc6* agilent TC611 pn#2 hsch-9161 PN diode specifications GaAs Detector Diode
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HSCH-9161 HSCH-9162 HSCH-916x HSCH916x 5989-6228EN TC611 Diode Model AGILENT TECHNOLOGIES 9161 AGILENT TECHNOLOGIES 9162 gamma detector tc6* agilent TC611 pn#2 hsch-9161 PN diode specifications GaAs Detector Diode | |
biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
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658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011 | |
Contextual Info: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure |
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904nm-5mW 904nm com/n904nm5m | |
pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
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diode Cathode indicated by blue bandContextual Info: Philips Semiconductors Short-form product specification Silicon planar diode FEATURES BA582 QUICK REFERENCE DATA • Low diode capacitance SYMBOL • Low diode series resistance. Vr continuous reverse voltage If continuous forward current Co diode capacitance |
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BA582 OD123 MAM157 OD123) diode Cathode indicated by blue band | |
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"MARKING CODE T3"
Abstract: diode T3 Marking SOT23 DIODE marking CODE AV taitron diode DIODE Sp marking code sot-23 MARKING CODE 21 MMBD7000 sot-23 diode marking t3 sot-23 DIODE marking code t3
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MMBD7000 OT-23 OT-23, MIL-STD-202G, "MARKING CODE T3" diode T3 Marking SOT23 DIODE marking CODE AV taitron diode DIODE Sp marking code sot-23 MARKING CODE 21 MMBD7000 sot-23 diode marking t3 sot-23 DIODE marking code t3 | |
R451570
Abstract: microwave detector diode Microwave Diode "zero-bias schottky diode" DIODE RF DETECTOR 33KOHM of resistance 33kohm
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OCR Scan |
R451570 R451570 2450MHz 33kOhm. 33kOhm, Ta-25t) microwave detector diode Microwave Diode "zero-bias schottky diode" DIODE RF DETECTOR 33KOHM of resistance 33kohm | |
BAP51-02
Abstract: BP317
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M3D319 BAP51-02 OD523 MAM405 OD523) 125004/00/02/pp6 BAP51-02 BP317 | |
109 DIODEContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance. |
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M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE | |
17033
Abstract: VISHAY sot23 device Marking DC 17417
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BAW56 BAL99, BAV99, BAV70. OT-23 30k/box 30k/box D-74025 10-Jul-03 17033 VISHAY sot23 device Marking DC 17417 | |
BAV70-GS18
Abstract: BAL99 BAV70 BAV70-GS08 BAV99 BAW56
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BAV70 BAV99, BAW56, BAL99. OT-23 BAV70-GS18 BAV70-GS08 D-74025 09-Jul-04 BAL99 BAV70 BAV70-GS08 BAV99 BAW56 | |
Contextual Info: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a |
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BAW56 BAL99, BAV99, BAV70. OT-23 BAW56 BAW56-GS18 BAW56-GS08 D-74025 27-Apr-04 | |
Contextual Info: BAW56-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type |
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BAW56-V BAL99, BAV99, BAV70 AEC-Q101 OT-23 GS18/10K 10K/box GS08/3K 15K/box | |
Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the |
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1N4151WS-V DO-35 1N4151, LL4151. AEC-Q101 2002/95/EC 2002/96/EC OD-323 GS18/10 GS08/3 | |
Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the |
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1N4151WS-V DO-35 1N4151, LL4151. AEC-Q101 2002/95/EC 2002/96/EC OD-323 GS18/10 GS08/3 |