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    DIODE 91 Search Results

    DIODE 91 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 91 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.


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    1N5408 PDF

    HSCH-9161

    Abstract: HSMS-2850 United Detector silicon diode
    Contextual Info: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through


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    HSCH-9161 HSCH-9161 5988-5907EN 5988-6209EN March31, HSMS-2850 United Detector silicon diode PDF

    1gg5

    Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
    Contextual Info: Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161


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    HSCH-9161 HSCH-9161 HSCH-9161/rev 1gg5 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode PDF

    HSCH-9161

    Abstract: United Detector silicon diode application note 979
    Contextual Info: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It


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    HSCH-9161 HSCH-9161 5988-6209EN AV02-3625EN United Detector silicon diode application note 979 PDF

    Contextual Info: Vishay Intertechnology, Inc. DIODE AND THYRISTOR MODULES ADD-A-PAK TO-240AA MODULES Up to 105 A, 1600 V, New Generation 7, Diode-Diode and Diode-SCR Configurations Available INT-A-PAK (34 MM) MODULES Up to 165 A, 1600 V, Diode-Diode and Diode-SCR Configurations


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    O-240AA) OT-227 VMN-MS6956-1408 PDF

    N40 DIODE

    Abstract: HSCH-9161 PB26 farad PARALLEL CAPACITOR CAP-12 diode N40
    Contextual Info: HSCH-9161 Diode Model Product Note #02 September1998 C1 11 fF D1 D2 Model Description PWR DBM CUR MA This product note provides a Spice model and a Libra model of the HSCH-9161 discrete beam lead GaAs diode. This diode is a modified barrier Schottky diode which features very low forward voltage


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    HSCH-9161 September1998 12E-6 30E-15 84E-6 HP9161 N40 DIODE PB26 farad PARALLEL CAPACITOR CAP-12 diode N40 PDF

    DIODE 914

    Abstract: eeds Low Leakage Diode SMD Diode 631
    Contextual Info: DESIGN CHALLENGE # 724 YOUR PORTABLE DEVICES REQUIRE LONGER BATTERY LIFE THINK EFFICIENT THINK CENTRAL TM MAXIMUM LEAKAGE CURRENT Standard Switching Diode 914 series 25nA Reverse Current T A =25˚C IR Low Leakage Diode (3003 series) 1.0nA Ultra Low Leakage Diode


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    OD-523 OT-563 OD-323 OT-363 OT-23 OT-26 DIODE 914 eeds Low Leakage Diode SMD Diode 631 PDF

    Contextual Info: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature


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    HSCH-9161 HSCH-9162 HSCH-916x HSCH916x 5989-6228EN PDF

    Contextual Info: 1N 914 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted.


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    DO-34, DO-35 PDF

    TC611 Diode Model

    Abstract: AGILENT TECHNOLOGIES 9161 AGILENT TECHNOLOGIES 9162 gamma detector tc6* agilent TC611 pn#2 hsch-9161 PN diode specifications GaAs Detector Diode
    Contextual Info: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature


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    HSCH-9161 HSCH-9162 HSCH-916x HSCH916x 5989-6228EN TC611 Diode Model AGILENT TECHNOLOGIES 9161 AGILENT TECHNOLOGIES 9162 gamma detector tc6* agilent TC611 pn#2 hsch-9161 PN diode specifications GaAs Detector Diode PDF

    biconvex lens with focal length 1 m and diameter 25.4 mm

    Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
    Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power


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    658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011 PDF

    Contextual Info: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure


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    904nm-5mW 904nm com/n904nm5m PDF

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode 1 Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


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    PDF

    diode Cathode indicated by blue band

    Contextual Info: Philips Semiconductors Short-form product specification Silicon planar diode FEATURES BA582 QUICK REFERENCE DATA • Low diode capacitance SYMBOL • Low diode series resistance. Vr continuous reverse voltage If continuous forward current Co diode capacitance


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    BA582 OD123 MAM157 OD123) diode Cathode indicated by blue band PDF

    "MARKING CODE T3"

    Abstract: diode T3 Marking SOT23 DIODE marking CODE AV taitron diode DIODE Sp marking code sot-23 MARKING CODE 21 MMBD7000 sot-23 diode marking t3 sot-23 DIODE marking code t3
    Contextual Info: Dual Small Signal Switching Diode MMBD7000 Dual Small Signal Switching Diode Features • • • • • Silicon Epitaxial Planar Diode Fast Switching Dual Diode. Especially Suited for Automatic Insertion High Conductance Electrically Identical to Standard JEDEC


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    MMBD7000 OT-23 OT-23, MIL-STD-202G, "MARKING CODE T3" diode T3 Marking SOT23 DIODE marking CODE AV taitron diode DIODE Sp marking code sot-23 MARKING CODE 21 MMBD7000 sot-23 diode marking t3 sot-23 DIODE marking code t3 PDF

    R451570

    Abstract: microwave detector diode Microwave Diode "zero-bias schottky diode" DIODE RF DETECTOR 33KOHM of resistance 33kohm
    Contextual Info: A. NATIONAL MICROWAVE DIODE For 2.45 GHz nd 915 MHz Partnr: R451570 MICROWAVE DETECTOR DIODE. R 451570 is a general-purpose zero-bias Schottky diode microwave coaxial detector, intended primarily for 915 MHz and 2450MHz industrial applications. The detector delivers well-scaled DC voltages as a function of microwave power.


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    R451570 R451570 2450MHz 33kOhm. 33kOhm, Ta-25t) microwave detector diode Microwave Diode "zero-bias schottky diode" DIODE RF DETECTOR 33KOHM of resistance 33kohm PDF

    BAP51-02

    Abstract: BP317
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    M3D319 BAP51-02 OD523 MAM405 OD523) 125004/00/02/pp6 BAP51-02 BP317 PDF

    109 DIODE

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE PDF

    17033

    Abstract: VISHAY sot23 device Marking DC 17417
    Contextual Info: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a


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    BAW56 BAL99, BAV99, BAV70. OT-23 30k/box 30k/box D-74025 10-Jul-03 17033 VISHAY sot23 device Marking DC 17417 PDF

    BAV70-GS18

    Abstract: BAL99 BAV70 BAV70-GS08 BAV99 BAW56
    Contextual Info: BAV70 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with


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    BAV70 BAV99, BAW56, BAL99. OT-23 BAV70-GS18 BAV70-GS08 D-74025 09-Jul-04 BAL99 BAV70 BAV70-GS08 BAV99 BAW56 PDF

    Contextual Info: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a


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    BAW56 BAL99, BAV99, BAV70. OT-23 BAW56 BAW56-GS18 BAW56-GS08 D-74025 27-Apr-04 PDF

    Contextual Info: BAW56-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type


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    BAW56-V BAL99, BAV99, BAV70 AEC-Q101 OT-23 GS18/10K 10K/box GS08/3K 15K/box PDF

    Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the


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    1N4151WS-V DO-35 1N4151, LL4151. AEC-Q101 2002/95/EC 2002/96/EC OD-323 GS18/10 GS08/3 PDF

    Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the


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    1N4151WS-V DO-35 1N4151, LL4151. AEC-Q101 2002/95/EC 2002/96/EC OD-323 GS18/10 GS08/3 PDF