Untitled
Abstract: No abstract text available
Text: STTH8R04 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 400 V Tj (max) 175° C VF (typ) 0.9 V trr (typ) 25 ns A K K • Very low switching losses ■ High frequency and high pulsed current operation ■ High junction temperature TO-220FPAC
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STTH8R04
O-220AC
STTH8R04D
O-220FPAC
STTH8R04FP
O-220AC
STTH8R04G
STTH8R04DI
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st 393
Abstract: STTH8R04 STTH8R04D STTH8R04DI STTH8R04FP STTH8R04G STTH8R04G-TR
Text: STTH8R04 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 400 V Tj (max) 175° C VF (typ) 0.9 V trr (typ) 25 ns A K K • Very low switching losses ■ High frequency and high pulsed current operation ■ High junction temperature TO-220FPAC
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STTH8R04
O-220AC
STTH8R04D
O-220FPAC
STTH8R04FP
O-220AC
STTH8R04G
STTH8R04DI
st 393
STTH8R04
STTH8R04D
STTH8R04DI
STTH8R04FP
STTH8R04G
STTH8R04G-TR
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IRGS4715D
Abstract: No abstract text available
Text: IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C C IC = 15A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 8A G E • Industrial Motor Drive • UPS • Solar Inverters
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IRGB4715DPbF
IRGS4715DPbF
IRGB4715DPbFÂ
220ABÂ
IRGS4715DPbFÂ
JESD47F)
O-220
IRGS4715D
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IRGB4060D
Abstract: IRF1010 CT4-15
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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97073B
IRGB4060DPbF
O-220AB
IRGB4060D
IRF1010
CT4-15
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Untitled
Abstract: No abstract text available
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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97073B
IRGB4060DPbF
O-220AB
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IRF1010
Abstract: 8A2021
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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97073B
IRGB4060DPbF
IRF1010
O-220AB
IRF1010
8A2021
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Untitled
Abstract: No abstract text available
Text: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4060DPbF
IRF1010
O-220AB
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STTA806DI
Abstract: STTA806D
Text: STTA806D I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.
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STTA806D
O220AC
STTA806D
STTA806DI
STTA806DI
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BB2L
Abstract: STTA812D STTA812DI STTA812G
Text: STTA812D/DI/G TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 1200V trr typ 50ns VF (max) 2.0V K A IF(AV) A A FEATURES AND BENEFITS K ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN
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STTA812D/DI/G
O-220AC
STTA812DI
STTA812D
STTA812G
BB2L
STTA812D
STTA812DI
STTA812G
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IRF840
Abstract: ISL9R860S3S TB334
Text: ISL9R860S3S May 2001 Data Sheet itle UF7 3P F76 D3 bA, V, 22 m, an- 8A, 600V Stealth Diode Features The ISL9R860S3S is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse
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ISL9R860S3S
ISL9R860S3S
IRF840
TB334
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Untitled
Abstract: No abstract text available
Text: ISL9R8120P2, ISL9R8120S3S 8 A, 1200 V, STEALTH Diode Features • Stealth Recovery trr = 300 ns @ IF = 8 A • Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS compliant
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ISL9R8120P2,
ISL9R8120S3S
ISL9R8120S3S
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APT10078BLL
Abstract: APT11GF120BRDQ1 APT11GF120BRDQ1G JESD24-1
Text: APT11GF120BRDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO -2 47 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
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APT11GF120BRDQ1
APT11GF120BRDQ1
APT11GF120BRDQ1G*
20KHz
APT10078BLL
APT11GF120BRDQ1G
JESD24-1
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IB12A600
Abstract: E80276 QM400HA-24
Text: MITSUBISHI TRANSISTOR MODULES QM400HA-24 HIGH POWER SWITCHING USE INSULATED TYPE QM400HA-24 • • • • • IC Collector current . 400A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 75
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QM400HA-24
E80276
E80271
IB12A600
E80276
QM400HA-24
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Untitled
Abstract: No abstract text available
Text: APT11GF120BRDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT11GF120BRDQ1 APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO -2 47 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
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APT11GF120BRDQ1
APT11GF120BRDQ1
APT11GF120BRDQ1G*
20KHz
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STTA806D
Abstract: STTA806DI STTA806G STTA806G-TR
Text: STTA806D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A A K K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS SPECIFICTO”FREEWHEEL MODE” OPERATIONS:
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STTA806D/DI/G
O-220AC
STTA806DI
STTA806D
2500VRMS
STTA806G
STTA806D
STTA806DI
STTA806G
STTA806G-TR
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STTA806DI
Abstract: STTA806D STTA806G STTA806G-TR
Text: STTA806D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A A K K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS SPECIFICTO”FREEWHEEL MODE” OPERATIONS:
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STTA806D/DI/G
O-220AC
STTA806DI
STTA806D
2500VRMS
STTA806G
STTA806DI
STTA806D
STTA806G
STTA806G-TR
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045C2
Abstract: STTA806DI STTA806D STTA806G STTA806G-TR
Text: STTA806D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A A K K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:
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STTA806D/DI/G
O-220AC
STTA806DI
STTA806D
2500VRMS
STTA806G
045C2
STTA806DI
STTA806D
STTA806G
STTA806G-TR
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R460PF2
Abstract: R460P ISL9R460PF2
Text: ISL9R460PF2 4 A, 600 V, Stealth Diode Features • Stealth Recovery trr = 17 ns @ IF = 4 A • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Switch Mode Power Supplies
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ISL9R460PF2
ISL9R460PF2
O-220F
00x45°
54TYP
R460PF2
R460P
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STTA806DI
Abstract: STTA806D STTA806G STTA806G-TR
Text: STTA806D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K • ■ ■ ■ K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS ■ A A K SPECIFIC TO “FREEWHEEL MODE” OPERATIONS:
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STTA806D/DI/G
O-220AC
STTA806DI
STTA806D
2500VRMS
STTA806G
STTA806DI
STTA806D
STTA806G
STTA806G-TR
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STTA806DI
Abstract: 4a 400V ultra fast diode d2pak STTA806D STTA806G STTA806G-TR
Text: STTA806D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K • ■ ■ ■ K Insulated TO-220AC STTA806DI TO-220AC STTA806D FEATURES AND BENEFITS ■ A A K SPECIFIC TO “FREEWHEELMODE”OPERATIONS:
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STTA806D/DI/G
O-220AC
STTA806DI
STTA806D
2500VRMS
STTA806G
STTA806DI
4a 400V ultra fast diode d2pak
STTA806D
STTA806G
STTA806G-TR
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B06A
Abstract: KAV60 DSEI 12 06A B-06A diode 640 Tvj-150
Text: •4bflbEEb DDDlbEti hhl H I X Y □IXYS DSEI8 Fast Recovery Epitaxial Diode V IFAV v = 8A = 400-600 V < 35 ns Typ *RSU V 440 540 640 D S E I 8 -0 4 A DS EI 8 -05 A D S E I Ô -06A 400 500 600 S ym bol S -s ° M aximum ratings Test conditions 130 A A
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B-04A
B-06A
115rC;
1506C:
O-220
B06A
KAV60
DSEI 12 06A
B-06A
diode 640
Tvj-150
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n539
Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Text: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0
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1N4001
1N4002
N4003
1N4004
1N4005
1N400Ó
1N4007
1N5392
1N5393
1N5394
n539
6A10 DIODE
diode 2a05
FRI57
diode 6A10
Diode IN5398
diode k5 10-16
diode 1n5392
N5398
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Diode SMD ED 7ca
Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
Text: / = 7 SGS-THOMSON S T T A 806M IL iO T * ! & _ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 600V trr 25ns (typ) 1.5 V V f (max) FEATURE&AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE” OPERA TIONS: Freewheel or Booster Diode.
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STTA806M
Diode SMD ED 7ca
alps 502 RD
SMD 8A TRANSISTOR
transistor smd 1FT
STTA806M
alps 502 C
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STTB806M
Abstract: Diode SMD ED 8A
Text: r z 7 m S C S - T H O M S O N 7# « ^ m [ i O T 2* S T T B 806M S ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (av 8A V rrm 600V trr (typ) 50ns V f (max) 1.3V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA TIONS: Snubbing or clamping, demagnetization
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STTB806M
S0-10â
TI-12SÂ
STTB806M
Diode SMD ED 8A
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