Untitled
Abstract: No abstract text available
Text: APT80F60J 600V, 84A, 0.055Ω Max, trr ≤ 370ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT80F60J
370ns
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Untitled
Abstract: No abstract text available
Text: APT80F60J 600V, 84A, 0.055Ω Max, trr ≤ 370ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT80F60J
370ns
OT-227
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lt 39 diode smd
Abstract: smd diode 78a IRG4ZH71KD
Text: PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C,
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IRG4ZH71KD
SMD-10
lt 39 diode smd
smd diode 78a
IRG4ZH71KD
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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gFE smd diode
Abstract: smd transistor 18E irg4zh70ud SMD-10 PACKAGE diode smd 312
Text: PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● ● ● ● UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in
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IRG4ZH70UD
SMD-10
gFE smd diode
smd transistor 18E
irg4zh70ud
SMD-10 PACKAGE
diode smd 312
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Untitled
Abstract: No abstract text available
Text: PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for
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1688A
IRG4PSH71KD
O-247
O-264,
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IRG4PSH71KD
Abstract: GE 84A Diode LT 410 diode lt 247
Text: PD - 91688 PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for
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IRG4PSH71KD
O-247
O-264,
O-247,
IRG4PSH71KD
GE 84A
Diode LT 410
diode lt 247
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IRG4PSH71KD
Abstract: No abstract text available
Text: PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for
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1688A
IRG4PSH71KD
O-247
O-264,
O-247,
IRG4PSH71KD
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1743A SFT1450 N-Channel Power MOSFET http://onsemi.com 40V, 21A, 28mΩ, Single TP/TP-FA Features • • ON-resistance RDS on 1=21mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=715pF(typ.) Protection diode in 4.5V drive
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ENA1743A
SFT1450
715pF
PW10s,
A1743-9/9
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Class d 1000 WATT
Abstract: MIL-STD-810D st 339 TX1000
Text: Corporate: www.cdtechno.com TX1000 1000 Watt, Single Output, AC/DC Power Supply Harmonic Correction to EN61000-3-2 z Self-Cooled 5”x 4.88”x 12” Chassis z 70-80% Efficiency z Wide Range Input of 90-264VAC z Optional ORing Diode z FCC / CISPR 22 Class A EMI
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TX1000
EN61000-3-2
90-264VAC
EN60950
EN61000-4
TX1000
8-32UNC-2B
Class d 1000 WATT
MIL-STD-810D
st 339
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT with Diode IXGK64N60B3D1 IXGX64N60B3D1 VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 64A 1.8V 88ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGK64N60B3D1
IXGX64N60B3D1
IC110
O-264
2x61-06A
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IXGX64N60B3D1
Abstract: PLUS247 123B16
Text: IXGK64N60B3D1 IXGX64N60B3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 64A 1.8V 88ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGK64N60B3D1
IXGX64N60B3D1
IC110
O-264
2x61-06A
IXGX64N60B3D1
PLUS247
123B16
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uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJFV0SG00
uPD3599
transistor nec 2SK2396
MOS FET BUZ 444
MC-7643
nec 3S4M
4305 regulator nec
RD2.4S equivalent
2SC4305 NEC
2sA1441 nec
NPN transistor SST 117
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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Untitled
Abstract: No abstract text available
Text: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
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94965B
IRF1010EPbF
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
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94965B
IRF1010EPbF
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 94965A IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
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4965A
IRF1010EPbF
O-220
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ssf6008
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 3150 mosfet
Text: SSF6008 Feathers: ID =84A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8mΩ Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current N–Channel enhancement mode trench power
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SSF6008
SSF6008
SSF6008TOP
T0-220)
O-220
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
3150 mosfet
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SSF*6808
Abstract: SSF6808 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Text: SSF6808 Feathers: ID =84A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=8mΩ（max.） Fully characterized avalanche voltage and current Description: The SSF6808 is a new generation of high voltage and low current N–Channel enhancement mode trench power
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SSF6808
SSF6808
T0-220)
O-220
SSF*6808
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
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Untitled
Abstract: No abstract text available
Text: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description
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IRF1010EPbF
O-220
fo20AB
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APT30M36B2FLL
Abstract: APT30M36LFLL
Text: APT30M36B2FLL APT30M36LFLL 300V POWER MOS 7 R FREDFET FREDFET 84A 0.036Ω B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30M36B2FLL
APT30M36LFLL
O-264
O-264
O-247
APT30M36B2FLL
APT30M36LFLL
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*f1010e
Abstract: irf1010e equivalent IRF1010E
Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description Advanced HEXFET® Power MOSFETs from International
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IRF1010E
O-220
*f1010e
irf1010e equivalent
IRF1010E
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IRF1010E
Abstract: No abstract text available
Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description Advanced HEXFET® Power MOSFETs from International
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IRF1010E
O-220
O-220AB
IRF1010E
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Untitled
Abstract: No abstract text available
Text: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins
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IRG4PSH71
O-247
O-264,
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