DIODE 83A Search Results

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

61000-4-X

Abstract: industrial process measurement 20KV DIODE AN9607
Contextual Info: AN96-07 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS TRANSIENT IMMUNITY STANDARDS: IEC 61000-4-x just prior to contact Air discharge method . Contact discharge is the preferred test method, but air discharge is used where contact discharge cannot be

AN9607

Abstract: 61000-4-X an96-07 TVS diode iec 61000-4-5 surge
Contextual Info: AN96-07 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS TRANSIENT IMMUNITY STANDARDS: IEC 61000-4-x just prior to contact Air discharge method . Contact discharge is the preferred test method, but air discharge is used where contact discharge cannot be

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

10KV DIODE

Contextual Info: Surging Ideas TVS Diode Application Note AN96-07 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com TRANSIENT IMMUNITY STANDARDS: IEC 1000-4-x On January 1, 1996, exports into Europe began facing some tough transient immunity standards. The International Electrotechnical Commission

Contextual Info: Schottky Barrier Diode Data Sheet RB160MM-50 lApplication lDimensions Unit : mm General rectification lLand Size Figure (Unit : mm) 0.1±0.1 0.05 1.2 lFeatures 1) Small power mold type 3.05 0.12 3.5±0.2 2.6±0.1 0.85 1.6±0.1 PMDU (PMDU) 2) High reliability

Contextual Info: Schottky Barrier Diode Data Sheet RB160MM-40 lApplication lDimensions Unit : mm General rectification lLand Size Figure (Unit : mm) 0.1±0.1 0.05 1.2 lFeatures 1) Small power mold type 3.05 3.5±0.2 0.12 2.6±0.1 0.85 1.6±0.1 PMDU (PMDU) 2) High reliability

2 input and gate 24v

Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode

2SK3511

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3511 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode +0.2 2.54-0.2 +0.2 15.25-0.2 Low Ciss: Ciss = 5900 pF TYP. +0.1 0.81-0.1

2SK3510

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3510 TO-263 +0.1 1.27-0.1 Features Super low on-state resistance: +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode +0.1 0.81-0.1 2.54 +0.2

ciss

Abstract: 2SK3432 2SK34
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3432 TO-263 +0.1 1.27-0.1 Features MAX. VGS = 4 V, ID = 42 A Low Ciss: Ciss = 9500 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 RDS(on)2 = 6.9 m +0.2 4.57-0.2 +0.2 2.54-0.2

mosfet 4800

Abstract: ,mosfet smd 4800 4800 power mosfet 4800 mosfet 2SJ606 ,Transistor smd 4800
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SJ606 TO-263 Unit: mm +0.1 1.27-0.1 Features MAX. VGS = -4.0 V, ID =-42 A Low Ciss: Ciss = 4800 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 RDS(on)2 = 23m +0.2 4.57-0.2 +0.2

Contextual Info: Transistors MOSFET IC SMD Type Product specification 2SK3355 TO-263 +0.1 1.27-0.1 RDS on 2 = 8.8m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 9800 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode

S 170 MOSFET TRANSISTOR

Abstract: smd transistor nc 61 2SK3355
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3355 TO-263 +0.1 1.27-0.1 RDS on 2 = 8.8m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 9800 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2

2SJ607 DATASHEET

Abstract: 2SJ607
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SJ607 TO-263 +0.1 1.27-0.1 RDS on 2 = 16 m MAX. (VGS = -4.0 V, ID =-42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 7500 pF TYP. 5.60 MAX. (VGS =-10 V, ID = -42A) Built-in gate protection diode +0.2 4.57-0.2

785Nm

Abstract: infra red diode 785nm diode PL78T040FC2D-T-0 TO 5.6mm package
Contextual Info: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Near Infra Red Series of laser diodes. These units are available in ready-to-use, fibercoupled packages, including FC, ST, and SC receptacles, as well as fiberpigtailed units.

gat 20

Abstract: smd transistor 26 2SK3479 1013M
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3479 TO-263 +0.1 1.27-0.1 RDS on 2 = 13 m MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 11000 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 MAX. (VGS = 10 V, ID = 42 A) +0.2 4.57-0.2

NS-106

Abstract: 2SK3354 NS 106
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

IR Laser diode

Contextual Info: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging op tions for its’ Near Inf ra Red Series of laser diodes. These units are a vailable in read y-to-use, f ibercoupled pa ckages, including FC, ST, and SC rece ptacles, as well as f iberpigtailed units.

2N2067

Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
Contextual Info: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581