philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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MOC2A40-5
Abstract: MOC2A40-10 601 Opto isolator 7255 AN1048 ACS01 motorola triac driver triac 101 amps IEEE472 RS-443
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA POWER OPTO Isolator M O C 2 A 4 0 -1 0 2 Amp Zero-Cross Triac Output M O C 2 A 4 0 -5 * This device consists of a gallium arsenide infrared emitting diode optically coupled to a zero-cross triac driver circuit and a power triac. It is capable of driving
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UL50811117
0CH1047
MOC2A40-5
MOC2A40-10
601 Opto isolator
7255
AN1048
ACS01
motorola triac driver
triac 101 amps
IEEE472
RS-443
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Bedienungsanleitung
Abstract: No abstract text available
Text: SAFETY ALERT SYMBOL INSTRUCTION MANUAL 77GX - 77GX2 - 150D TONE GENERATORS This symbol is used to call your attention to hazards or unsafe practices which could result in an injury or property damage. The signal word, defined below, indicates the severity of the hazard. The message
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77GX2
Bedienungsanleitung
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FMCW Radar
Abstract: 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW
Text: Low Barri er RF Sch ottk y Dio d e BAT2 4 Mi xe r f or FMCW Ra dar at 2 4 GHz Application Note AN190 Revision: V1.0 Date: 22-01-2010 RF and Protecti on Devi c es Edition 15-02-2010 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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AN190
AN190,
24GHz
BAT24:
FMCW Radar
77GHz Radar
infineon FMCW
sensor radar 24ghz
AN190
diagram radar circuit
77GHz circulator
Types of Radar Antenna
FMCW circuit
FMCW
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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Untitled
Abstract: No abstract text available
Text: SKM 100GB124D Absolute Maximum Ratings Symbol Conditions IGBT 6-7 -: 6!7 < 6 SEMITRANSTM 2 Low Loss IGBT Module SKM 100GB124D + 3 01 B ?B < 3 041 5- Characteristics Symbol Conditions IGBT 6-7 Typical Applications $
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100GB124D
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100gb124d
Abstract: No abstract text available
Text: SKM 100GB124D Absolute Maximum Ratings Symbol Conditions IGBT 6-7 -: 6!7 < 6 SEMITRANSTM 2 Low Loss IGBT Module SKM 100GB124D + 3 01 B ?B < 3 041 5- Characteristics Symbol Conditions IGBT 6-7 Typical Applications $
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100GB124D
100gb124d
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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77GHz Radar
Abstract: PPH25x ulm 2003 ph15 transistor pph15 transistor HB20M 24GHz Radar military switch PPH25 thales SMD
Text: UMS MMIC Solutions up to 100GHz The European Source for Products, Solutions and Foundry Services ABOUT US United Monolithic Semiconductors* UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Ulm, Germany and Orsay,
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100GHz
77GHz Radar
PPH25x
ulm 2003
ph15 transistor
pph15 transistor
HB20M
24GHz Radar
military switch
PPH25
thales SMD
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ulm 2003
Abstract: 77GHz Radar sas smd transistor PPH15 PPH25X 5gHz SMD RF Mixer SMD Transistor SAs diode catalogue pph15 transistor ulm 2002
Text: ABOUT US United Monolithic Semiconductors UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Germany, USA and France (Headquarters). Your Leading Source for Products, Support & Services
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LM2588
Abstract: UPL1V102MRH 67147 Schott 67147420 TL 0621 N ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a 67147450 67147410 schematic diagram 48v dc regulator schematic diagram 12v in step-up to out 24v 30a
Text: May 1995 LM2588 SIMPLE SWITCHER 5A Flyback Regulator General Description Features T he LM 2588 series o f regulators are m onolithic integrated circuits specifically designed fo r flyback, step-up boost , and forw ard co nve rter applications. The device is available
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LM2588
LM2588
UPL1V102MRH
67147
Schott 67147420
TL 0621 N
ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a
67147450
67147410
schematic diagram 48v dc regulator
schematic diagram 12v in step-up to out 24v 30a
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TP890
Abstract: No abstract text available
Text: FULL-LINE CATALOG39 MultiMeters | Clamp Meters | Thermometers | Airflow Meters | Light Meters | Sound Meters Water Quality Testers | Tachometers | Humidity & Moisture Meters | Video Inspection Cameras www.extech.com Call us or e-mail: 877-439-8324 orders@extech.com.
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CATALOG39
TP890
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Untitled
Abstract: No abstract text available
Text: Bulletin 12020/A International S R ectifier 200HF R SERIES STANDARD RECOVERY DIODES Stud Version Features High current carrying capability High surge current capability Types up to 1 2 00V V RRM Stud cathode and stud anode version Standard J E D E C types
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12020/A
200HF
S5452
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77G DIODE
Abstract: CA3083F/3W
Text: C ìA Q fìfìQ HARRIS S E M I C O N D U C T O R J T u General Purpose High Current NPN Transistor Array S e p te m b e r 1 9 9 6 Features Description • High lc . 100mA Max T h e C A 3 0 8 3 is a vers a tile array of five high current (to
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100mA
CA3083
77G DIODE
CA3083F/3W
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infineon ACC_PLL_1
Abstract: 77ghz VCO
Text: T626_MPA2_W 77 GHz MPA for Car Radar Systems T626_MPA2_W Preliminary Data GaAs MMIC Features • Operating Frequency: 76-77 GHz • Output Power: +13 dBm • Input and Output matched to 50 Ohms • Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-G0173
QS9000
ISO9001
infineon ACC_PLL_1
77ghz VCO
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r03003
Abstract: 77GHz Radar FMCW Radar FMCW circuit FMCW VCO 10GHZ oscillator ku-band oscillator 77GH
Text: CHV2242 Q-band VCO based on Ku-band Oscillator and Q-band Multiplier GaAs Monolithic Microwave IC Description Main Features n Ku-band VCO + Q-band multiplier n On chip varactor n External resonator for centre frequency control and phase noise optimisation
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CHV2242
CHV2242
DSCHV22420077
-17-Mar-00
r03003
77GHz Radar
FMCW Radar
FMCW circuit
FMCW
VCO 10GHZ oscillator
ku-band oscillator
77GH
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infineon FMCW
Abstract: 77GHz Radar Infineon 77GHz VCO infineon radar 77ghz VCO FMCW circuit ultrasonic power generator with PLL 77 GHz VCO FMCW Radar fmcw
Text: T625_VCO2_W 77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data GaAs MMIC Features • Operating Frequency: 76-77 GHz • Tuning Range > 1GHz • Output matched to 50 Ohms • Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe
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Q62702-G0172
QS9000
ISO9001
infineon FMCW
77GHz Radar
Infineon 77GHz VCO
infineon radar
77ghz VCO
FMCW circuit
ultrasonic power generator with PLL
77 GHz VCO
FMCW Radar
fmcw
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77GHz Radar
Abstract: R03003 77ghz VCO FMCW Radar chip varactor varactor diode for x band radar 77GHz R0300
Text: CHV2242a Q-band VCO based on Ku-band Oscillator and Q-band Multiplier GaAs Monolithic Microwave IC Description +V Main Features n Ku-band VCO + Q-band multiplier n On chip varactor n External resonator for centre frequency control and phase noise optimisation
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CHV2242a
CHV2242a
DSCHV22421074
-15-Mar
77GHz Radar
R03003
77ghz VCO
FMCW Radar
chip varactor
varactor diode for x band radar
77GHz
R0300
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Untitled
Abstract: No abstract text available
Text: ¿77 SGS-1H0MS0N * J I . M » I I U M W P @ i _ L 6 2 3 4 THREE PHASE MOTOR DRIVER ADVANCE DATA . SUPPLY VOLTAGE FROM 7 TO 58V . 5A PEAK CURRENT . DC MAX CURRENT T ^ = 70°C ♦ 1.5A(SO(16+2+2 ♦ 4A (PowerS020) • R ds on 0.3Q TYP VALUE AT 25°C
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PowerS020)
50KHz
L6234
L6234
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CHM2378
Abstract: low power dc mixer mmic am
Text: CHM2378 W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description RF1 The CHM2378 is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and
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CHM2378
CHM2378
100MHz
DSCHM23781074
-15-Mar
low power dc mixer
mmic am
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Untitled
Abstract: No abstract text available
Text: CHM2378a RoHS COMPLIANT W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description RF1 The CHM2378a is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and
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CHM2378a
CHM2378a
100MHz
DSCHM2378a6354
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CHM2378
Abstract: dual diode mixer
Text: CHM2378a W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description RF1 The CHM2378 is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and
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CHM2378a
CHM2378
100MHz
DSCHM23781269
-26-Sep
dual diode mixer
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