DIODE 68A Search Results

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

100n60

Abstract: IXXR100N60B3H1
Contextual Info: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

94N50

Contextual Info: Advance Technical Information IXFN94N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 68A  55m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings

Contextual Info: XPTTM 600V IGBT GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC110 = 68A VCE(sat) ≤ 1.80V Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

DSAIH0002555

Contextual Info: B K C INT ERNAT IO NA L Ü3E D | 1 1 7 ^ 0 3 ODDDOfli _Type N0.IN 68A 7^ 0 / - 0 7 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC Internationa! Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients

GDE 13a DIODE

Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

HZM6.8WA

Abstract: 3.5V zener diode
Contextual Info: HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb Features Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Top View , Cathode

diode 1.5ke 200A

Abstract: Diode P6KE 100A
Contextual Info: TVS DIODE Electrical Characteristics P4KE, P6KE, 1.5KE Series: 51 to 400 Volts Break Down Voltage Code Maximum Reverse Current IRSM A Series: Series: Series: P4KE P6KE 1.5KE Break Down Voltage Working Maximum Maximum Maximum VBR @ IT Peak Reverse Clamping Temperature

What is a TRANSZORB

Abstract: SCL20A 1N6302A 1.5KE 180A keytek* 424 generator SCM120A diode 1.5ke 13A 5643A 1N6042A 5kp28a, 15000W reco relay
Contextual Info: TransZorb PROVIDING PROTECTION FOR • Telecommunications • Military • Computer • Industrial • Test & Instrumentation • Medical • Automotive GENERAL SEMICONDUCTOR INDUSTRIES, INC. A TransZorb® is a class o f diode, tw o term inal, that is designed

6868A

Contextual Info: TVS DIODE Electrical Characteristics P4KE, P6KE, 1.5KE Series: 51 to 400 Volts Break Down Voltage Code Maximum Reverse Current IRSM A Series: Series: Series: P4KE P6KE 1.5KE Break Down Voltage Working Maximum Maximum Maximum VBR @ IT Peak Reverse Clamping Temperature

Contextual Info: HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-351 Z Rev. 0 May. 1995 Features • HZM6.8WA has two devices, and can absorb external + and - surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI A D E -208-442A Z Rev 1 Features • HZM6.8FA has four devices, and can absorb external + and -Surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

ADE-208-442A

Abstract: Hitachi DSA00359
Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 September 1996 Features • HZM6.8FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Features Rev. 0 May. 1995 Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

SFT1445

Contextual Info: Ordering number : ENA1897A SFT1445 N-Channel Power MOSFET http://onsemi.com 100V, 17A, 111mΩ, Single TP/TP-FA Features • • ON-resistance RDS on 1=85mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=1030pF(typ.) Protection diode in 4V drive

Contextual Info: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Features Rev. 0 May. 1995 Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-351A Z Rev 1 Feb. 1, 1999 Features • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

3.5V zener diode

Abstract: 68A diode SC-59A Hitachi DSA00493
Contextual Info: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb Rev. 0 May.1995 Features Outline • HZM6.8WA has two devices, and can absorb external + and −surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

3.5V zener diode

Abstract: ADE-208-442A high speed Zener Diode
Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 Features • • HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information

68A diode

Abstract: Hitachi DSA00776 ADE-208-442A HZM6.8FA
Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 September 1996 Features • • HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.