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    DIODE 6203 Search Results

    DIODE 6203 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 6203 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-A1028

    Abstract: 6203W diode bat 85
    Text: BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 62-03W L Q62702-A1028 Pin Configuration Package 1=A SOD-323


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    PDF 2-03W 2-03W Q62702-A1028 OD-323 900MHz Mar-07-1996 Q62702-A1028 6203W diode bat 85

    diode RL 04

    Abstract: No abstract text available
    Text: BAT 62-03W Silicon Schottky Diode 2  Low barrier diode for detectors up to GHz 1 frequencies VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration BAT 62-03W L 1=C Package 2=A SOD-323 Maximum Ratings


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    PDF 2-03W VPS05176 OD-323 Oct-07-1999 diode RL 04

    Untitled

    Abstract: No abstract text available
    Text: 62033 TO-46 LIGHT EMITTING DIODE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 06/30/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package Touch screen arrays Reflective sensors Position sensors Level sensors


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    PDF 940nm MIL-PRF-19500.

    Untitled

    Abstract: No abstract text available
    Text: 62033 TO-46 LIGHT EMITTING DIODE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 06/30/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package Touch screen arrays Reflective sensors Position sensors Level sensors


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    PDF 940nm MIL-PRF-19500.

    Untitled

    Abstract: No abstract text available
    Text: 62038 GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 08/18/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package End-of-tape indicators Reflective sensors Card readers


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    PDF 940nm MIL-PRF-19500. 100mA

    Untitled

    Abstract: No abstract text available
    Text: 62033 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE TYPE GS5040 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION Touch screen arrays


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    PDF GS5040) 940nm MIL-PRF-19500. GS5040-1 GS5040-2, GS5040-3,

    TO46 package

    Abstract: GS5040-3 GS5040-1 GS5040-2
    Text: 62033 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE TYPE GS5040 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION Touch screen arrays


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    PDF GS5040) 940nm MIL-PRF-19500. GS5040-1 GS5040-2, GS5040-3, TO46 package GS5040-3 GS5040-2

    Untitled

    Abstract: No abstract text available
    Text: 62038 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE Replaces TIL 31-34 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION


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    PDF 940nm TIL33B. MIL-PRF-19500. TIL31B TIL31BHR2 TIL33B TIL33BYR2

    TIL31B

    Abstract: IR TIL31B TO46 package TIL33B
    Text: 62038 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE Replaces TIL 31-34 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION


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    PDF 940nm TIL33B. MIL-PRF-19500. TIL31B TIL31BHR2 TIL33B TIL33BYR2 IR TIL31B TO46 package

    CLASS II LASER

    Abstract: 74HCT04 BC184 IEC8 quadrant detector 213-3629 Light Detector laser
    Text: Issued March 1997 232-6203 Data Pack F Laser diode modules Data Sheet This data sheet covers the following items: Device Beta TX series 1mW modulating 3mW modulating 3mW modulating Beta CW series 1mW continuous wave 1.5mW continuous wave 3mW continuous wave


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    PDF

    TSHA620

    Abstract: TSHA6202 TSHA520 TSHA6200 TSHA6201 TSHA6203
    Text: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.


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    PDF TSHA620. TSHA520. D-74025 11-May-04 TSHA620 TSHA6202 TSHA520 TSHA6200 TSHA6201 TSHA6203

    Untitled

    Abstract: No abstract text available
    Text: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.


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    PDF TSHA620. TSHA520. 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability


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    PDF TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability


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    PDF TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 2002/95/EC. 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability


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    PDF TSHA6200, TSHA6201, TSHA6202, TSHA6203 2002/95/EC 2002/96/EC TSHA620. 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: mu GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 O P TO ELEC TR O N IC PRODUCTS DIVISION * HIGH INTENSITY GaAIAs VERSION AVAILABLE RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 is a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to


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    PDF MIL-S-19500.

    Untitled

    Abstract: No abstract text available
    Text: ma GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 OPTO ELE CT RON IC PRODUCTS D I VI SI O N * HIGH INTENSITY GaAIAs VERSION AVAILABLE RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 ¡s a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to


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    PDF MIL-S-19500.

    Untitled

    Abstract: No abstract text available
    Text: HICROPAC INDUSTRIES INC 45E D b i i s m o ooQOTaa s a dpi GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 * HIGH INTENSITY GaAIAs VERSION AVAILABLE •-T3W-U RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 is a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to


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    PDF MIL-S-19500.

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT 62-03W L Ordering Code Pin Configuration Package Q62702-A1028


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    PDF 2-03W Q62702-A1028 2-03W OD-323 S535b05 D1SD354 900MHz

    JN sod323

    Abstract: JN sod-323
    Text: SIEMENS BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT 62-03V\ L Ordering Code Pin Configuration Package Q62702-A1028


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    PDF 2-03W Q62702-A1028 OD-323 2-03V\ 900MHz JN sod323 JN sod-323

    Untitled

    Abstract: No abstract text available
    Text: ma 62038 GaAs INFRARED LIGHT-EMITTING DIODE OPTOELECTRONIC PRODUCTS DIVISION REPLACES TIL 33B GENERAL DESCRIPTION The 62038 is designed to emit near-infrared radiation when forward biased. The output is spectrally compatible with silicon sensors and is a pin compatible replacement for the TIL33B. The 62038 is hermetically sealed and utilizes a flat lense. A coin­


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    PDF TIL33B. TIL33B /IH6203E TIL31 TIL34

    tube 6203

    Abstract: GL-6203 diode 6203 GL620 rs tube DIODE E91 general electric
    Text: E T -T 1 0 2 6 DESCRIPTION AND RATING TWIN DIODE GL-6203 FIVE-STAR TUBE ★ ★ ★ ★ ★ The GL-6203 is a miniature full-wave high-vacuum rectifier intended for use in power supplies of a-c and storage-battery-operated equipment. The tube is specially designed to assure dependable life and reliable service under the exacting conditions


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    PDF ET-T1026 GL-6203 GL-6203 tube 6203 diode 6203 GL620 rs tube DIODE E91 general electric

    circuit sc 6200

    Abstract: DS-02-V
    Text: NJU7261 Series C-MOS STEP-UP SWITCHING REGULATOR • GENERAL DESCRIPTION ■ PRELIM INARY PACKAGE OUTLINE The NJU7261 series is a C-MOS step-up switching regulator which contains accurate voltage reference, error amplifier, CR osciIlator, control circuit, switching transistor, diode


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    PDF NJU7261 NJU7261UXX circuit sc 6200 DS-02-V

    TIL31

    Abstract: No abstract text available
    Text: mu 62038 GaAs INFRARED LIGHT-EMITTING DIODE O P TO E LE C TR O N IC PRODUCTS D IV IS IO N REPLACES TIL 33B GENERAL DESCRIPTION The 62038 is designed to emit near-infrared radiation when forward biased. The output is spectrally compatible with silicon sensors and is a pin compatible replacement for the TIL33B. The 62038 is hermetically sealed and utilizes a flat lense. A coin­


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    PDF TIL33B. TIL33B TIL31 TIL34 bllEb40 000107b