DHG60I1200HA
Abstract: No abstract text available
Text: DHG 60 I 1200 HA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 60 A 200 ns Part number DHG 60 I 1200 HA 3 1 Backside: cathode Features / Advantages: Applications:
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60747and
20110617a
DHG60I1200HA
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400HB
Abstract: No abstract text available
Text: DPF 60 IM 400HB not released V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns 1 Part number Marking on product 2 DPF 60 IM 400HB 3 Features / Advantages: Applications: Package:
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400HB
O-247AD
60747and
400HB
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BZX88
Abstract: BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 BZX88-C2V7
Text: MICRO-E SILICON PLANAR HIGH-SPEED SW ITCHING DIODES Ratings and Characteristics at 2 5 °C ambient temperature Type BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 Description Max. Vrw m Volts 60 Single diode 30 Single diode Single diode 15 60 Common cathode diode pair
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BAW63
BAW63A
BAW63B
BAW64
BAW65
BAW66
BAW67
BAW68
BZX88-C10
BZX88-C11
BZX88
BZX88-C2V7
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Untitled
Abstract: No abstract text available
Text: DSA 60 C 60 HB tentative V RRM = 60 V I FAV = 2x 30 A V F = 0.65 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power
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O-247
60747and
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Untitled
Abstract: No abstract text available
Text: DPG 60 I 300HA advanced HiPerFRED² V RRM = I FAV = t rr = High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number 3 DPG 60 I 300HA 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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300HA
O-247AD
60747and
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Untitled
Abstract: No abstract text available
Text: DHG 60 I 1200 HA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 60 A 200 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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60747and
20110617a
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DPG60IM400QB
Abstract: DPF60IM400HB DPG60I400HA dpg 60 im 400 qb DPF60I
Text: DPG 60 IM 400 QB V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 IM 400 QB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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60747and
20100128a
DPG60IM400QB
DPF60IM400HB
DPG60I400HA
dpg 60 im 400 qb
DPF60I
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d1ca
Abstract: d1ja D1JA20
Text: DIODE RA SERIES ARRAYS OF ROTARY SOLENOIDS Low-frequency rectifying Diode Arrays Absolute Maximum Ratings VRM IO Type No. D1CS20 D1CA20 20R 60 60R D1JS20 D1JA20 60 *1 D1CA D1CS IFSM D1JS Electrical Characteristics Tstg Tj VF max Conditions Ta Conditions
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D1CS20
D1CA20
D1JS20
D1JA20
d1ca
d1ja
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DLA60I1200HA
Abstract: No abstract text available
Text: DLA 60 I 1200 HA tentative VRRM = I FAV = VF = Low Voltage Standard Rectifier Single Diode 1200 V 60 A 1V Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase
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O-247
f0090720
60747and
DLA60I1200HA
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LED570-66-60
Abstract: No abstract text available
Text: LED570-66-60 TECHNICAL DATA High Power LED Array, 60 chips InGaAlP LED570-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency InGaAlP diode chips, mounted on a metal stem TO-66 with AIN ceramics
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LED570-66-60
LED570-66-60
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LED420-66-60-110
Abstract: No abstract text available
Text: LED420-66-60-110 TECHNICAL DATA High Power LED Array, 60 chips, Glass Window LED420-66-60-110 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency InGaN diode chips, mounted on a metal stem TO-66 and covered with
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LED420-66-60-110
LED420-66-60-110
S3584-08
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LEDW47-66-60-110
Abstract: No abstract text available
Text: LEDW47-66-60-110 TECHNICAL DATA High Power LED Array, 60 chips InGaN LEDW47-66-60-110 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency InGaN blue color diode chips, mounted on a metal stem TO-66 and
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LEDW47-66-60-110
LEDW47-66-60-110
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Untitled
Abstract: No abstract text available
Text: VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A FEATURES • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time • Designed and
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VS-60
JEDEC-JESD47
O-247AC
O-247AC
VS-60EPF1.
VS-60APF1.
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A FEATURES • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time TO-247AC modified
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VS-60
O-247AC
JEDEC-JESD47
O-247AC
VS-60EPF.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: 4* SPECIFICATION DIODE: Schottky IF av Amps MAX Vrrm Volts MIN @TC °C Vfm Volts MAX IRM mA MAX TJ C MAX FST 60 Amp. (D61- 2SL) Part# Cross Ref. : FST6230SL 62CNQ030SL 60 30 135 0.46 5 150 FST6245SL 60CNQ045SL 60 45 116 0.52 2 150 FST62100SL 63CNQ100SL 60
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FST6230SL
62CNQ030SL
FST6245SL
60CNQ045SL
FST62100SL
63CNQ100SL
D61-2SL
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Untitled
Abstract: No abstract text available
Text: VS-60.PF1.PbF Series, VS-60.PF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A FEATURES • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time TO-247AC modified
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VS-60
O-247AC
JEDEC-JESD47
O-247AC
2002/95/EC
VS-60EPF1.
VS-60APF1.
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: DPG 60 IM 300 PC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 60 A 35 ns Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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po200
60747and
20100205a
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LED385-66-60-110
Abstract: No abstract text available
Text: LED385-66-60-110 TECHNICAL DATA PRELIMINARY High Power LED Array, 60 chips InGaN LED385-66-60-110 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency InGaN UV diode chips, mounted on a metal stem TO-66 and covered a
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LED385-66-60-110
LED385-66-60-110
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2x61-12A
Abstract: 60-12A
Text: DSEP 2x 60-12A HiPerFREDTM Epitaxial Diode IFAV = 2x 60 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 miniBLOC, SOT-227 B Type DSEP 2x 60-12A Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 80°C; rectangular, d = 0.5 100 60 A A
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0-12A
OT-227
torqu200
2x61-12A
2x61-12A
60-12A
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LED375-66-60-110
Abstract: No abstract text available
Text: LED375-66-60-110 TECHNICAL DATA PRELIMINARY High Power LED Array, 60 chips InGaN LED375-66-60-110 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency InGaN UV diode chips, mounted on a metal stem TO-66 and covered a
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LED375-66-60-110
LED375-66-60-110
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LED365-66-60
Abstract: No abstract text available
Text: LED365-66-60 TECHNICAL DATA High Power LED Array, 60 chips AlGaN LED365-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaN diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with clear silicone resin.
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LED365-66-60
LED365-66-60
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Untitled
Abstract: No abstract text available
Text: DSEI 60-06A DSEI 60-06AT VRRM = 600 V IFAVM = 60 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 A Type C TO-247 AD A DSEI 60-06A DSEI 60-06AT C C TO-268 AA (AT Type) A A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ①
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0-06A
60-06AT
60-06AT
O-247
O-268
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DLA60I1200HA
Abstract: No abstract text available
Text: DLA 60 I 1200 HA tentative VRRM = I FAV = VF = Low Voltage Standard Rectifier Single Diode 1200 V 60 A 1V Part number DLA 60 I 1200 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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O-247
60747and
DLA60I1200HA
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Untitled
Abstract: No abstract text available
Text: SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 56 25 25 9,8 KW 50 9,8 KW 60 66 ø11,5 ø11,5 95 80 2 1 36 50 48 3 60 IGBT 112 124 92
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