DIODE 5A 800V Search Results

ERC20M

Contextual Info: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

power Diode 800V 5A

Abstract: ERC20M
Contextual Info: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

power Diode 800V 5A

Abstract: diode 5A 800V
Contextual Info: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability

Contextual Info: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design

power Diode 800V 5A

Contextual Info: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design

YG226S8

Abstract: power Diode 800V 5A Diode 800V 5A 5A 800V
Contextual Info: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design

ERC20

Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

power Diode 800V 5A

Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

d400 e

Abstract: power Diode 800V 5A
Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

ERC20

Contextual Info: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

SCS205KG

Contextual Info: SCS205KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 17nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: SCS105KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCS105KG

Contextual Info: SCS105KG Datasheet SiC Schottky Barrier Diode lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: SCS210KE2 SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A/10A* QC 17nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

Contextual Info: S6301 Data Sheet SiC Schottky Barrier Diode Bare Die VR 1200V IF 5A*1 17nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

8EWS08S

Abstract: 8EWS10S 8EWS12S AN-994 8EWS10
Contextual Info: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology

8EWS10

Contextual Info: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology

8EWS08S

Abstract: 8EWS10S 8EWS12S AN-994
Contextual Info: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology

Contextual Info: Preliminary Data Sheet 12151 05/98 International IO R Rectifier SAFElR Series 70EPS. R INPUT RECTIFIER DIODE W ) = 13 5A VF < 1.15V@ 70A 'f s m = 900A V RRM 800 to 1600V Description/Features The 70EPS.(R) rectifier SAFElR series has been optimized for very low forward voltage drop, with

Contextual Info: Preliminary Data Sheet 12151 rev. A 12/98 International I R Rectifier SAFElR Series 70EPS. INPUT RECTIFIER DIODE W = 13 5A VF < 1.15V@ 70A 'f s m = 900A VRRM 800 to 1600V Description/Features The 70EPS. rectifier S A F E R series has been optimized for very low forward voltage drop, with

APT5F100K

Abstract: MIC4452 1000v5a
Contextual Info: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced