ir igbt 1200V 40A
Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
Text: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package
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IRGPS40B120U
Super-247
20KHz
Super-247TM
5M-1994.
O-274AA
ir igbt 1200V 40A
igbt 1200V 40A short circuit
on 4772
200uH
HF40D120ACE
IRGPS40B120U
1200v fet
Super-247 Package
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420 Diode
Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UDP
Super-247
Super-247TM
PS37N50A
IRFPS37N50A
420 Diode
719C
IRGPS40B120UDP
IRFPS37N50A
1000V 20A transistor
UJ3000
igbt 1200V 60A
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Untitled
Abstract: No abstract text available
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UDP
Super-247
Super-247â
IRFPS37N50A
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420 Diode
Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
Text: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UD
Super-247
Super-247TM
5M-1994.
O-274AA
420 Diode
ir igbt 1200V 40A
IRGPS40B120UD
TRANSISTOR N 1380 600 300 SC
igbt 40A 600V
3IRGPS40B120UD
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IRGPS40B120UD
Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
Text: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4240A
IRGPS40B120UD
Super-247
Super-247TM
Super-247TM
IRFPS37N50A
IRFPS37N50A
IRGPS40B120UD
ic MARKING QG
1000V 20A transistor
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Untitled
Abstract: No abstract text available
Text: IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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IRG7PH46UDPbF
IRG7PH46UD-EP
O-247AD
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IRG7PH46UPBF
Abstract: 600v 20a IGBT driver ir igbt 1200V 40A 96305 igbt 40A 600V C-150 9630
Text: PD - 96305 IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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IRG7PH46UPbF
IRG7PH46U-EP
O-247AD
IRG7PH46UPBF
600v 20a IGBT driver
ir igbt 1200V 40A
96305
igbt 40A 600V
C-150
9630
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Untitled
Abstract: No abstract text available
Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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6305A
IRG7PH46UPbF
IRG7PH46U-EP
O-247AD
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mosfet 1200V 40A
Abstract: MOSFET 40A 600V ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V 4772 mosfet driver Diode 1200V 40A IGBT 600V 40A IGBT 600V 40A diode
Text: PROVISIONAL PD - 94240 IRGPS40B120UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA
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IRGPS40B120UD
Super-247
20KHz
Super-247TM
5M-1994.
O-274AA
mosfet 1200V 40A
MOSFET 40A 600V
ir igbt 1200V 40A
DIODE 2800
igbt 1200V 40A short circuit
igbt 40A 600V
4772 mosfet driver
Diode 1200V 40A
IGBT 600V 40A
IGBT 600V 40A diode
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irg7ph46
Abstract: 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A IRG7PH46UPBF 8200 T igbt driver applications
Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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6305A
IRG7PH46UPbF
IRG7PH46U-EP
O-247AC
O-247AD
IRG7PH46NE
irg7ph46
600v 20a IGBT driver
tr marking code 25h
irg7ph46uep
marking code 117A
8200 T
igbt driver applications
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IRF 930
Abstract: IRFPS40N50L 93923 IRFPS40N50
Text: PD- 93923 PROVISIONAL IRFPS40N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics
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IRFPS40N50L
Super-247TM
Dissipatio252-7105
IRF 930
IRFPS40N50L
93923
IRFPS40N50
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mosfet 1200V 40A
Abstract: 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A
Text: PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C VCES = 1200V Features • • • • • Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE on Temperature Coefficient.
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IRGPS40B120U
Super-247
Super-247TM
5M-1994.
O-274AA
mosfet 1200V 40A
600v 20a IGBT driver
IRGPS40B120U
800V 40A mosfet
IGBT 600V 40A
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IRFP150
Abstract: TA17431 IRFP151 IRFP153 IRFP152 TB334 12V 40A motor Relay 170uH
Text: IRFP150, IRFP151, IRFP152, IRFP153 Semiconductor 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 34A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFP150,
IRFP151,
IRFP152,
IRFP153
IRFP150
TA17431
IRFP151
IRFP153
IRFP152
TB334
12V 40A motor Relay
170uH
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sil 5102
Abstract: 150N IRFP150 TB334 PO40A
Text: [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator () /DOCI S N ESIG W D CT E N FOR ODU TM DED UTE PR N E STIT OMM REC LE SUB 150N
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IRFP15
sil 5102
150N
IRFP150
TB334
PO40A
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IRF7779L2TR
Abstract: IRF7779L2TR1PBF IRF7779L2T
Text: PD - 97435 IRF7779L2TRPbF IRF7779L2TR1PbF DirectFET Power MOSFET RoHS Compliant, Halogen Free l Lead-Free Qualified up to 260°C Reflow l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification
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IRF7779L2TRPbF
IRF7779L2TR1PbF
AN1035
IRF7779L2TR
IRF7779L2TR1PBF
IRF7779L2T
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4311 mosfet transistor
Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
Text: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP150
TA17431.
O-247
4311 mosfet transistor
tl 4311
transistor tl 4311
IRFP150
TB334
T2T-2
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IRFPS37N50A
Abstract: IRGPS40B120UP 312V marking code igbt 40a 600v
Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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5899A
IRGPS40B120UP
Super-247
Super-247TM
IRFPS37N50A
IRFPS37N50A
IRGPS40B120UP
312V marking code
igbt 40a 600v
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Untitled
Abstract: No abstract text available
Text: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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IRGPS40B120UP
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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sil 5102
Abstract: IRFP150 TB334
Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()
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IRFP150
sil 5102
IRFP150
TB334
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irfp150
Abstract: No abstract text available
Text: IGNS DES W E N CT FOR PRODU D E D E MEN ITUT COM SUBST 0N E R NOT SSIBLE IRFP15 Data Sheet PO 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm,
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IRFP15
IRFP150
irfp150
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Untitled
Abstract: No abstract text available
Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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5899A
IRGPS40B120UP
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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TRANSISTOR N 1380 600 300 SC
Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
Text: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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4295A
IRGPS40B120U
Super-247
Super-247TM
5M-1994.
O-274AA
TRANSISTOR N 1380 600 300 SC
MOSFET 40A 600V
IRGPS40B120U
mosfet 1200V 40A
1200V,
IGBT 500A 1200V
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Untitled
Abstract: No abstract text available
Text: IRFW/I550A Advanced Power MOSEET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V ■ Lower RDS(ON) : 0.032 £2(Typ.)
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OCR Scan
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PDF
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IRFW/I550A
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Untitled
Abstract: No abstract text available
Text: Advanced IRFW/I550A Power MOSFET FEATURES BV DSS = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 40 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature
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IRFW/I550A
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