B20NM50FD
Abstract: P20NM50FD F20NM50D P20NM50 STP20NM50FD B20NM50 STB20NM50FD STF20NM50D ZVS phase-shift converters
Text: STP20NM50FD STF20NM50D - STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/TO-220FP/D2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STF20NM50D STB20NM50FD 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC
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STP20NM50FD
STF20NM50D
STB20NM50FD
O-220/TO-220FP/D2PAK
STF20NM50D
B20NM50FD
P20NM50FD
F20NM50D
P20NM50
STP20NM50FD
B20NM50
STB20NM50FD
ZVS phase-shift converters
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Untitled
Abstract: No abstract text available
Text: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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O-220/I
STP20NM50FD
STB20NM50FD-1
O-220
O-220)
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TO220I
Abstract: STP20NM50FD
Text: STP20NM50FD STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/I PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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O-220/I
STP20NM50FD
STB20NM50FD-1
STB20NM50FD
O-220
O-220)
TO220I
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STB20NM50FD-1
Abstract: SD20A STP20NM50FD
Text: Q * Be R t s g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A
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O-220/I2PAK
STP20NM50FD
STB20NM50FD-1
O-220
O-220)
STB20NM50FD-1
SD20A
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S-1380
Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters
Text: Q * Be R t s g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A
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STP20NM50FD
STB20NM50FD-1
O-220/I2PAK
S-1380
STB20NM50FD-1
STP20NM50FD
ZVS phase-shift converters
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P20NM50FD
Abstract: B20NM50FD P20NM50 STP20NM50FD B20NM50FD-1 STB20NM50FD-1 ZVS phase-shift converters
Text: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22Ω
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STP20NM50FD
STB20NM50FD-1
O-220/I2PAK
O-220
P20NM50FD
B20NM50FD
P20NM50
STP20NM50FD
B20NM50FD-1
STB20NM50FD-1
ZVS phase-shift converters
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S-1380
Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters 836 DIODE current
Text: Q * B • ■ ■ ■ ■ ■ R t es g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS R DS(on) R ds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC
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STP20NM50FD
STB20NM50FD-1
O-220/I
S-1380
STB20NM50FD-1
STP20NM50FD
ZVS phase-shift converters
836 DIODE current
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Untitled
Abstract: No abstract text available
Text: KSM10N50CF/KSMF10N50CF 500V N-Channel MOSFET Features TO-220F TO-220 • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode
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KSM10N50CF/KSMF10N50CF
O-220F
O-220
54TYP
00x45Â
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G20N50c
Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance
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HGTG20N50C1D
O-247
500ns
150oC.
G20N50c
g20n50c1d
g20n50
g20N50c1
HGTG20N50
HGTG20N50C1D
20A igbt
IGBT Drivers Transistors
ACT10
AN7254
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ZVS phase-shift converters
Abstract: STB20NM50FD
Text: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STB20NM50FD
ZVS phase-shift converters
STB20NM50FD
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STB20NM50FD
Abstract: ZVS phase-shift converters
Text: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STB20NM50FD
STB20NM50FD
ZVS phase-shift converters
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Untitled
Abstract: No abstract text available
Text: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STB20NM50FD
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G20N50c
Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE
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HGTG20N50C1D
O-247
500ns
150oC.
AN7254
AN7260)
150oC
100oC
G20N50c
g20n50c1d
mosfet 20a 300v
g20n50
ic tb 810 datasheet
HGTG20N50C1D
g20N50c1
HGTG20N50
20A igbt
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Untitled
Abstract: No abstract text available
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW20NM50FD
O-247
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Untitled
Abstract: No abstract text available
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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O-247
STW20NM50FD
O-247
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S-1380
Abstract: STW20NM50FD ZVS phase-shift converters
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW20NM50FD
O-247
S-1380
STW20NM50FD
ZVS phase-shift converters
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Untitled
Abstract: No abstract text available
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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O-247
STW20NM50FD
O-247
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Untitled
Abstract: No abstract text available
Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW20NM50FD
O-247
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IXFN64N50PD2
Abstract: 64N50P SOT227B package 64N50
Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ
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IXFN64N50PD2
IXFN64N50PD3
OT-227
E153432
200ns
64N50P
IXFN64N50PD2
SOT227B package
64N50
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IXFN64N50PD2
Abstract: IXFN64N50PD3
Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A 85m 200ns
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IXFN64N50PD2
IXFN64N50PD3
E153432
200ns
IXFN64N50PD2
IXFN64N50PD3
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN64N50PD2 IXFN64N50PD3 RDS on Boost & Buck Configurations (Ultra-fast FRED Diode) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ
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IXFN64N50PD2
IXFN64N50PD3
OT-227
E153432
200ns
64N50P
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mosfet 500v 10A
Abstract: diode 500v 10A mosfet 10a 500v power diode 500v 10A 2SK1278
Text: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1278
mosfet 500v 10A
diode 500v 10A
mosfet 10a 500v
power diode 500v 10A
2SK1278
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Untitled
Abstract: No abstract text available
Text: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1278
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PJ 969 diode
Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode
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500ns
HGTG20N50C1D
O-247
AN7254
AN7260)
PJ 969 diode
G20N50c
20N50C1D
pj 986 diode
F25 transistor
mosfet 20n
GE 639
pj 809
IGBT 500V 35A
igbt 20A 500V
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