MMIX1F520N075T2
Abstract: IXFZ520N075T2 ixfz520n075
Text: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
MMIX1F520N075T2
IXFZ520N075T2
ixfz520n075
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140tr
Abstract: No abstract text available
Text: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
140tr
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
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diode 500A
Abstract: diode 500A 1200v
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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68nF
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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diode 500A
Abstract: IGBT 500A 1200V FF51
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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DIM500GCM33-TS000
Abstract: DIM500GCM33-TS
Text: DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-2 DS6098-3 September 2014 LN31960 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)
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DIM500GCM33-TS000
DS6098-2
DS6098-3
LN31960)
65ames
DIM500GCM33-TS000
DIM500GCM33-TS
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Untitled
Abstract: No abstract text available
Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates
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DIM500GCM33-TS000
DS6098-1
LN30465)
2400ames
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68nf
Abstract: diode 500A IGBT FF 300 IC800
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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DIM500GCM33-TL000
Abstract: DIM500GCM33-TL
Text: DIM500GCM33-TL000 IGBT Chopper Module Replaces DS6114-1 DS6114-2 January 2014 LN31264 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM500GCM33-TL000
DS6114-1
DS6114-2
LN31264)
DIM500GCM33-TL000
DIM500GCM33-TL
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Untitled
Abstract: No abstract text available
Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates
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DIM500GCM33-TS000
DS6098-1
LN30465)
2400ames
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Untitled
Abstract: No abstract text available
Text: DIM500GCM33-TL000 IGBT Chopper Module DS6114-1 July 2013 LN30663 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM500GCM33-TL000
DS6114-1
LN30663)
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F1500NC
Abstract: calculation of diode snubber westcode fast recovery diode F1500NC250 50V 2000A diode
Text: An IXYS Company Provisional Data Data Sheet Issue:- 1 WESTCODE Date:- 2 Oct, 2003 Absolute Maximum Ratings VOLTAGE RATINGS Extra Fast Recovery Diode Type F1500NC250 MAXIMUM LIMITS UNITS Repetitive peak reverse voltage, note 1 2500 V VRSM Non-repetitive peak reverse voltage, (note 1)
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F1500NC250
F1500NC250
F1500NC
calculation of diode snubber
westcode fast recovery diode
50V 2000A diode
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Untitled
Abstract: No abstract text available
Text: An IXYS Company Provisional Data Data Sheet Issue:- 1 WESTCODE Date:- 2 Oct, 2003 Absolute Maximum Ratings VOLTAGE RATINGS Repetitive peak reverse voltage, note 1 VRSM Non-repetitive peak reverse voltage, (note 1) VRRM Extra Fast Recovery Diode
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F1500NC250
F1500NC250
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DIM500GDM33-TS000
Abstract: DIM500GDM33-TS
Text: DIM500GDM33-TS000 Dual Switch IGBT Module Replaces DS6097-2 DS6097-3 September 2014 LN31961 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC
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DIM500GDM33-TS000
DS6097-2
DS6097-3
LN31961)
DIM500GDM33-TS000
DIM500GDM33-TS
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M1502NC
Abstract: m1502nc250 21502A westcode fast recovery diode
Text: WESTCODE An Date:- 9 Sep, 2004 Data Sheet Issue:- 1 IXYS Company Fast Recovery Diode Type M1502N#200 to M1502N#250 Old Type No.: SM16-25CXC334 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2000 - 2500
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M1502N
SM16-25CXC334
M1502NC
m1502nc250
21502A
westcode fast recovery diode
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Untitled
Abstract: No abstract text available
Text: DIM500GDM33-TL000 Dual Switch IGBT Module DS6113-1 July 2013 LN30662 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM500GDM33-TL000
DS6113-1
LN30662)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 500EXH22 500EXH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 2500V :F AV = 500A trr = 5/<s (MAX.) (Tj = 25°C)
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500EXH22
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 500EXH22 500EXH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 2500V :F AV = 500A trr = 5/<s (MAX.) (Tj = 25°C)
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500EXH22
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diode 500A 2500v
Abstract: 500EXH22 izl diode
Text: TO SHIBA 500EXH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 500EXH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage V r r m = 2500V • Average Forward Current ÏF AV = 500A • Reverse Recovery Time trr = 5jus (MAX.) (Tj = 25°C)
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500EXH22
diode 500A 2500v
500EXH22
izl diode
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500YKH22
Abstract: No abstract text available
Text: TO SHIBA 500YKH22 500YKH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • Repetitive Peak Reverse Voltage VRRM = 2700V • Average Forward Current ÏF AV = 500A • Reverse Recovery Time trr = 5jus (MAX.) (Tj = 25°C)
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500YKH22
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Untitled
Abstract: No abstract text available
Text: 500YKH22 TO SHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 500YKH22 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time U n it in mm = 2700V ! f AV = 500A trr = 5^s(MAX.) (Tj = 25°C)
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500YKH22
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500YKH22
Abstract: No abstract text available
Text: TO SH IBA 500YKH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 500YKH22 HIGH SPEED RECTIFIER APPLICATIONS Unit in mm • Repetitive Peak Reverse Voltage : V r r m ~ 2700V • Average Forward Current : Ip AV = 500A • Reverse Recovery Time : tn ^ ö /^ s (MAX.) (Tj = 25°C)
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500YKH22
500YKH22
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 500YKH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 500YKH22 HIGH SPEED RECTIFIER APPLICATIONS Unit in mm • Repetitive Peak Reverse Voltage : V r r m ~ 2700V • Average Forward Current : Ip AV = 500A • Reverse Recovery Time : tn ^ ö /^ s (MAX.) (Tj = 25°C)
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500YKH22
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