PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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diode 47c
Abstract: No abstract text available
Text: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 47 C 170 I 1700 SKCD 47C 170 I 6,9x6,9 mm; 42 A4); 1700V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 6 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)
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C/125
diode 47c
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients
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AEC-Q101
JESD201A
EC-61000-4-2
DO-214AA
12mm/13â
RS-481
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GDE 13a DIODE
Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient
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OT-23
GDE 13a DIODE
diode marking GDE 38
diode 009 6V8A
marking diode 47C sot23
NEC D 882 p
GEX 36A DIODE
Diode Gfg 6f
MOTOROLA 727 36A
Diode GFP 56A
GFM 16A
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19tq15
Abstract: 42ctq30 IR42CTQ30 47CTQ20 IR42CTQ20 30L20 30L30 40L15 ir19 IR40L15
Text: Efficiency in SMPS Output Stage December 30th, 1999 Alberto Guerra & Francesco Vallone Department of Input/Output Rectifier International Rectifier, 1521 Grand, El Segundo 90245, California, U.S.A. Abstract. By means of the SPICE Schottky diode model, developed recently by International
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FU-456RDF
Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information
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350mW
650nm
1600nm
H-CT606-J
KI-0807
FU-456RDF
ML9XX46
laser diode DVD 300mw
FU-357RPA
650nm laser diode 200mw
ML7XX46
APD 10gbps
1550nm Laser Diode with butterfly pin package
sirio
FU-68SDF-V3M series
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650nm laser diode 200mw
Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information
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350mW
650nm
1600nm
H-CR606-G
KI-0608
650nm laser diode 200mw
FU-456RDF
laser diode DVD 300mw
FU-357RPP
laser FP TO-CAN for SFP
SIRIO
FU-357RPA
laser DFB 1550nm 10mW
PD8XX10
ML7XX46
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laser diode DVD 300mw
Abstract: MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication
Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650 nm to 1600 nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 300 mW Application Map 1 Technology Trend 3 Laser Diode for Information
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H-CP606-E
laser diode DVD 300mw
MF-2500FXC
785nm mitsubishi
mitsubishi ic. 5201
DVD LENS circuit diagrams
1550nm Laser Diode butterfly
laser diode DVD 100mw
D4030
FU-423SLD
laser diode for optical communication
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kluber
Abstract: KLUBER WOLFRACOAT C Thyristor BT 102 water cooled thyristor assembly kluber wolfracoat thyristor ys 150 017 NT102 295kW Thyristor ys 150 103 RC snubber thyristor design
Text: Technical Information Technische Erläuterungen Für schnelle Thyristoren wird hierzu empfohlen: - C, = 10.47 nF - R, entsprechend 7, = Fl, . C, = 1,0 . .2.0 ps - D, schnelle Diode Der Entladewiderstand R, darf niemals fehlen, weil sich sonst einige Daten der Thyristoren verschlechtern können, z.B. die kritische Spannungssteilheit dv/dt ,. Falls die Beschaltung den Verlauf des Steuerstroms nachteilig beeinflußt, so ist dies bei der Bemessung des
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Abstract: No abstract text available
Text: VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • 150 °C TJ operation • Optimized for 3.3 V application • Ultralow forward voltage drop • High frequency operation Anode
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VS-47CTQ020PbF,
VS-47CTQ020-N3
O-220AB
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • 150 °C TJ operation • Optimized for 3.3 V application • Ultralow forward voltage drop • High frequency operation Anode
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VS-47CTQ020PbF,
VS-47CTQ020-N3
2002/95/EC
JEDEC-JESD47
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-47CTQ020PbF, VS-47CTQ020-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode • 150 °C TJ operation • Optimized for 3.3 V application • Ultralow forward voltage drop • High frequency operation Anode
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VS-47CTQ020PbF,
VS-47CTQ020-N3
O-220AB
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-47CTQ020S-M3, VS-47CTQ020-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK TO-262 FEATURES • 150 °C TJ operation • Center tap configuration • Optimized for 3.3 V application • Ultralow forward voltage drop
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VS-47CTQ020S-M3,
VS-47CTQ020-1-M3
O-262
VS-47CTQ020S-M3
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-47CTQ020SPbF, VS-47CTQ020-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A TO-263AB D2PAK FEATURES TO-262AA • 150 °C TJ operation • Center tap configuration • Optimized for 3.3 V application • Ultralow forward voltage drop
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VS-47CTQ020SPbF,
VS-47CTQ020-1PbF
O-263AB
O-262AA
VS-47CTQ020SPbF
J-STD-020,
VS-47CTQ020-1PbF
2002/95/EC.
2002/95/EC
2011/65/EU.
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40HF
Abstract: 47CTQ020 P460
Text: Bulletin PD-20854 rev. A 02/07 47CTQ020PbF 40 Amp SCHOTTKY RECTIFIER IF AV = 40Amp VR = 20V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 40 A VRRM 20 V IFSM @ tp = 5 s sine 1000 A VF 0.34 V - 55 to 150
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PD-20854
47CTQ020PbF
40Amp
O-220
40HF
47CTQ020
P460
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40HF
Abstract: 47CTQ020-1 47CTQ020S P460 SMD-220 smd DIODE code marking 20A
Text: Bulletin PD-21038 rev. A 07/06 47CTQ020SPbF 47CTQ020-1PbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 20V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular waveform 40 A VRRM 20 V IFSM @ tp = 5 s sine
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PD-21038
47CTQ020SPbF
47CTQ020-1PbF
40Amp
O-220
O-262
40HF
47CTQ020-1
47CTQ020S
P460
SMD-220
smd DIODE code marking 20A
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Untitled
Abstract: No abstract text available
Text: 47CTQ020PbF Vishay High Power Products Schottky Rectifier, 40 A FEATURES • • • • • • 150 °C TJ operation Available Center tap configuration RoHS* Optimized for 3.3 V application COMPLIANT Ultra low forward voltage drop High frequency operation
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47CTQ020PbF
O-220AB
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: 5 Ü 8 È X /W :* y a 7 jnting Device Surface Moun.ing^Device K 7 Schottky Barrier Diode K S Diode Array OUTLINE DIMENSIONS S1ZAS4 40V 1.2A •S M D • T j 1 50TC •P rrs m % T \j - •SR B S •D C /D C Z iy iK - 9 •m m , y -A . oa«h •a«. Tti-^jutü
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: i S l l f A - f x Surface Mounting Device y a 7 y y h ÿ 'i ^ — K 7 Schottky Barrier Diode U - f I Diode Array WWrffeffl OUTLINE DIMENSIONS S1ZAS4 40V 1.2A •S M D • T j 1 5 0"C •P n n s M m 7 I K ^ > y ÿ z U M . r u - •S R mm •D C /D C I V A '- i?
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Untitled
Abstract: No abstract text available
Text: s e MIKRDn Absolute Maximum Ratings Symbol Conditions ' Values Units 1200 V 550 1500 375 -5 5 + 150 A A2s °C °C °c V rrm Ifsm l2t Tsolder Tvj, Tstg Tvj, Tstg SEMICELL CAL - Diode Chips3* SKCD 47C 120 I > 6 bondwires 300 |im 0 tp = 10 ms; sin; T j = 150 °C
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BCD047
C/125
l3bb71
CD047205
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Untitled
Abstract: No abstract text available
Text: s e MIKRD n Types V r rm V 1500 1600 1700 SEMICELL C A L - Diode Chips3 SKCD 47 C 1501 SKCD 47 C 1601 SKCD 47 C 1701 SKCD 47C 150.1701 6,9x6,9 mm; 40 A4>;1500.1700V Absolute Maximum Ratings Symbol Conditions ' If s m > 6 bondwires 300 jim 0 ) tp = 10 ms; sin; Tj = 150 °C
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C/125
613bb71
0Q0b73S
CD047701
013bb71
00Db73b
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hp pin diode
Abstract: multi port circulator
Text: That HEWLETT rnücM PACKARD Applications o f PIN Diodes Application Note 922 Introduction The m ost im portant property of the PIN diode is the fact that it can, under certain circumstances, behave as an alm ost pure resis tance at RF frequencies, with a
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MTT-35,
hp pin diode
multi port circulator
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MARKING SMD 43t
Abstract: 43t SMD smd 43t a13g smd 2au smd marking 9T smd diode marking JC DIODE marking VU 49LC AI 186 N
Text: SBD Array Diode Array WWW OUTLINE Package : 1Z S1ZAS4 40 V 1.2A 1,1, m - ; Type NKo. ' Feature • SMD x vH J— _ —I . Dale codc T ï ï Main Use •mm. f - A . IJ 3 2 21 4.7 7 MAX • Switching Regulator • DC/DC Converter • Home Appliance, Game,
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S12AS4
waveli50HÂ
C59SE
J532-1)
MARKING SMD 43t
43t SMD
smd 43t
a13g
smd 2au
smd marking 9T
smd diode marking JC
DIODE marking VU
49LC
AI 186 N
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LM 327 CN
Abstract: LM 327 N 2088a
Text: Ordering number : EN 3 9 6 0 ¡I N o .3960 FP101 P N P E p ita x ia l P la n a r S ilico n T ra n s is to r / C o m p o site S c h o ttk y B a r r ie r D iode SA%YOi DC/DC C onverter A p p lica tio n s F e a tu r e s • C om posite type w ith a P N P tr a n s is to r a n d a S c h o ttk y b a r r ie r diode c o n ta in e d in one p ack ag e,
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FP101
2SB1121
05-05C
LM 327 CN
LM 327 N
2088a
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