DIODE 43A Search Results

100v 20a fast recovery power diode

Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
Contextual Info: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

CD laser pickup assembly

Abstract: laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd
Contextual Info: Numbering System • New Numbering System of Laser Diodes GH 0 65 07 A 2 A Semiconductor laser diode Category 0 : Laser diode, 1 : Frame laser, 2 : Dual wavelength laser Wavelength (63 : 635nm band, 65 : 650nm band, 78 : 780nm band etc.) Optical power output

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

ESD valve

Abstract: S370 S370 UDT "Emitting Diode"
Contextual Info: VISIB LE LIG HT PRODUCTS Super Green Light Emitting Diode REV:B DATE:2005/4/25 ESD PRODUCTS ! CLASS I iDEVICE NO:HSFb-43AG LENS COLOR: colored diffusion colored transparent white diffusion water clear »PACKAGE DIMENSIONS: A W f IO O - +l 2A CM CO , -

Contextual Info: HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

11n120cnd

Abstract: TA49189 11n120 MJ5016 11N120CND INTERSIL HGTG11N120CND TA49291 12V 200A Relay TA49303 LD26
Contextual Info: HGTG11N120CND Data Sheet January 2000 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

HGTG11N120CND

Abstract: 11n120cnd 11n120 TA49303 LD26 TA49189 TA49291
Contextual Info: HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

11n120cnd

Abstract: 11n120 11N120CND INTERSIL TA49189 TA49303 12V 200A Relay HGTG11N120CND LD26 TA49291 11N120C
Contextual Info: HGTG11N120CND Data Sheet January 2000 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

11N120CND

Contextual Info: HG TG 11N120CND S em iconductor Data Sheet April 1999 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The H GTG11N120CND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

Contextual Info: ADVANCED POWER Te c h n o l o g y 0 APT5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2

5012JN

Abstract: APT5012JNU3 APTS012JNU3 APT5012
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O A rm m m APT5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T

APT42F50B

Abstract: APT42F50S MIC4452 43A 013
Contextual Info: APT42F50B APT42F50S 600V, 43A, 0.13Ω Max trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D wV o k APT5012JNU2 O s ISOTOP® POWER MOS IV< 500V 43A 0.120 Single Die M OSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS

Contextual Info: APT43F60B2 APT43F60L 600V, 43A, 0.16Ω Max, trr ≤270ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

r33v

Abstract: LES08A3.3L05 SOIC-08 marking 221 3L05 8V 1A TVS diode
Contextual Info: EletroStatic Discharged Protection Devices LES08AXXL05 Series EletroStatic Discharged Protection Devices (LES08AXXL05 Series) DESCRIPTION BrightKing’s LES08AXXL05 series are surge-rated diode arrays designed to protect high-speed data line interfaces. The series has been specifically

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients

GDE 13a DIODE

Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient

APT5012JNU2

Abstract: ST-200 transformer DIODE BAT 17
Contextual Info: A d van ced R o w er Te c h n o l o g y APT5012JNU2 ISOTOP® 500V 43A 0.120 Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" P O W E R M O S IV ‘ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm 1V m

Contextual Info: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd