hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
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25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
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BD304
Abstract: SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A
Text: SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4241, Rev- HERMETIC ULTRAFAST DIODE Description: 3Amp, 20nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Data communication and telecommunications system equipment
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SXX175UF3A
SXX200UF3A
SXX225UF3A
SXX250UF3A
Mil-Prf-19500
BD304
SXX175UF3A
SXX200UF3A
SXX225UF3A
SXX250UF3A
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SXX175UF3A
Abstract: BD304 SXX200UF3A SXX225UF3A SXX250UF3A
Text: SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4241, Rev- HERMETIC ULTRAFAST DIODE Description: 3Amp, 20nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Data communication and telecommunications system equipment
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SXX175UF3A
SXX200UF3A
SXX225UF3A
SXX250UF3A
Mil-Prf-19500
SXX175UF3A
BD304
SXX200UF3A
SXX225UF3A
SXX250UF3A
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transistor C 4242
Abstract: SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A
Text: SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4242, Rev- HERMETIC ULTRAFAST DIODE Description: 1Amp, 15nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Datacommunication and telecommunication system equipment
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SXX175UF-A
SXX200UF-A
SXX225UF-A
SXX250UF-A
Mil-Prf-19500
SXX17asheet
transistor C 4242
SXX175UF-A
SXX200UF-A
SXX225UF-A
SXX250UF-A
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SXX225UF-A
Abstract: SXX175UF-A SXX200UF-A SXX250UF-A
Text: SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATASHEET 4242, Rev A HERMETIC ULTRAFAST DIODE Description: 1Amp, 15nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Datacommunication and telecommunication system equipment
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SXX175UF-A
SXX200UF-A
SXX225UF-A
SXX250UF-A
Mil-Prf-19500
SXX225UF-A
SXX175UF-A
SXX200UF-A
SXX250UF-A
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SVC321SPA
Abstract: varactor diode AM EN699H 3881 AM receiver 6993
Text: Ordering number :EN699H SVC321SPA Diffused Junction Type Sillicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC321SPA is a varactor diode with a good linearity and high capacitance raito that is capable of
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EN699H
SVC321SPA
SVC321SPA
SVC321SPA]
varactor diode AM
EN699H
3881
AM receiver
6993
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SVC321SPA
Abstract: varactor diode AM 3881
Text: Ordering number :EN699H SVC321SPA Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC321SPA is a varactor diode with a good linearity and high capacitance raito that is capable of
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EN699H
SVC321SPA
SVC321SPA
SVC321SPA]
varactor diode AM
3881
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UC1612J
Abstract: UC1612L UC3612 UC3612DP UC3612J UC3612N UC1612
Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage
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UC1612
UC3612
UC1612
UC1612J
UC1612L
UC3612
UC3612DP
UC3612J
UC3612N
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Untitled
Abstract: No abstract text available
Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage
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UC1612
UC3612
UC3612
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DIODE DATABOOK
Abstract: FLYBACK CLAMPING DIODE UC1612 UC3612
Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage
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UC1612
UC3612
UC1612
DIODE DATABOOK
FLYBACK CLAMPING DIODE
UC3612
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FLYBACK CLAMPING DIODE
Abstract: Schottky Diode 40V 5A Schottky Diode 40V 5A dual Schottky Diode 50V 3A DIODE DATABOOK DUAL DIODE two transistor forward UC1612 UC3612
Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage
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UC1612
UC3612
UC1612
100mA
FLYBACK CLAMPING DIODE
Schottky Diode 40V 5A
Schottky Diode 40V 5A dual
Schottky Diode 50V 3A
DIODE DATABOOK
DUAL DIODE
two transistor forward
UC3612
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Schottky diode Die flip chip
Abstract: UC1612 UC1612J UC1612L UC3612 UC3612DP UC3612J UC3612N
Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage
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UC1612
UC3612
UC1612
Schottky diode Die flip chip
UC1612J
UC1612L
UC3612
UC3612DP
UC3612J
UC3612N
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UTZ-SC0331
Abstract: ndv4916e NM424
Text: [ UTZ-SC0331_2 ] 2012/10/02 Violet Laser Diode NDV4916E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 410-420nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm ( + .03
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UTZ-SC0331
NDV4916E
CW120mW
410-420nm
ndv4916e
NM424
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UTZ-SC0332
Abstract: No abstract text available
Text: [ UTZ-SC0332_2 ] 2012/10/02 Violet Laser Diode NDV4A16E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 420-425nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm ( + .03
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UTZ-SC0332
NDV4A16E
CW120mW
420-425nm
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Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0332_2 ] 2012/10/02 Violet Laser Diode NDV4A16E Engineering Sample Features Outline Dimension • Optical Output Power: CW120mW • Peak Wavelength: 420-425nm • Can Type:5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm
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UTZ-SC0332
NDV4A16E
CW120mW
420-425nm
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Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0331_2 ] 2012/10/02 Violet Laser Diode NDV4916E Engineering Sample Features Outline Dimension • Optical Output Power: CW120mW • Peak Wavelength: 410-420nm • Can Type:5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm
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UTZ-SC0331
NDV4916E
CW120mW
410-420nm
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FLYBACK CLAMPING DIODE
Abstract: Schottky Diode 50V 3A DIODE DATABOOK power Schottky bridge Schottky Diode 40V 5A Schottky Diode 40V 5A bridge PLCC-20 SOIC-16 UC1610 UC2610
Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
UC1610
100mA
FLYBACK CLAMPING DIODE
Schottky Diode 50V 3A
DIODE DATABOOK
power Schottky bridge
Schottky Diode 40V 5A
Schottky Diode 40V 5A bridge
PLCC-20
SOIC-16
UC2610
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
UC3610DW
UC3610DWTR
UC3610N
UC3610Q
UC3610QTR
SSYA008
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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Untitled
Abstract: No abstract text available
Text: UC1612 UC3612 y ^ UNITRODE Dual Schottky Diode FEATURES DESCRIPTION • The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. Monolithic Two Diode Array Exceptional Efficiency
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UC1612
UC3612
UC3612
100mA
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
capC1610
UC3610
100mA
030S4
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS u im UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
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PDF
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 UNITROOE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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OCR Scan
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UC1610
UC2610
UC3610
100mA
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