Untitled
Abstract: No abstract text available
Text: LASER DIODE CONTROLLER WITH APC Micrel, Inc. FEATURES DESCRIPTION • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Monitor Diode power control circuit ■ Designed for use with SY88902 and SY88903 ■ Single power supply
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SY88903
SY88902
10-pin
SY88905
SY88903
M9999-081005
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U5ZA40C
Abstract: No abstract text available
Text: U5ZA40C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA40C Best Suited for Overvoltage Protection of Electronic System: Electronic System for Use in Automobiles Electronic System for Commercial Use Electronic System for Industrial Use For Communications, Controls, Measuring Instruments, etc.
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U5ZA40C
U5ZA40C
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Untitled
Abstract: No abstract text available
Text: U5ZA40C TOSHIBA Zener Diode Silicon Diffused-Junction Type U5ZA40C Best Suited for Overvoltage Protection of Electronic Systems Unit: mm Electronic Systems for Use in Automobiles Electronic Systems for Commercial Use Electronic Systems for Industrial Use For Communications, Control, Measurement Instruments
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U5ZA40C
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Untitled
Abstract: No abstract text available
Text: Ultra Low Noise Wideband Op Amp APPLICATIONS: FEATURES typical : • • • • • • • • • • • • • • • • instrum entation sense amplifiers ultrasound pre-amps magnetic tape & disk pre-amps photo-diode transim pedance amplifiers wide band active filters
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CLC425
05nV/VHz
00V/V
LC425
OA-15
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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35n120au1
Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU
Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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35N120AU1
35n120au1
IXSX35N120AU1
IGBT 500V 35A
35N120AU
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I2C Bus Control Interface IC
Abstract: No abstract text available
Text: 19-2190; Rev 1; 5/06 2°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted
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2N3904
2N3906
E16-1*
21-0055F
MAX6690MEE-T
MAX6690MEE+
MAX6690MEE
MAX6690YMEE+
I2C Bus Control Interface IC
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Untitled
Abstract: No abstract text available
Text: 19-1836; Rev 3; 5/06 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted
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2N3904
2N3906
E16-1*
21-0055F
MAX6654MEE-T
MAX6654MEE+
MAX6654MEE
MAX6654YMEE+
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PDF
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS blE J> • 4447SAM 0010312 135 H H P A IDA-07318 MagIC Silicon Bipolar MMIC 1.5 Gb/s Laser Diode Driver HEW LETT PACKARD 180 mil Package Features • • • • • • • • High Data Rates: 1.5 Gb/s NRZ High Modulation Current: 50 mA
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4447SAM
IDA-07318
IDA-07318
---------40C
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Untitled
Abstract: No abstract text available
Text: Li IXYS Half Controlled VHF36 Single Phase Rectifier Bridges with freewheeling Diode Type DSti V 8 1 3 2 op o p V 800 1200 1400 1600 Test Conditions •dAV» ^FRHS> ^TRM S Tk = 85‘ C, module module per leg ^FSU> ^TSH Tvj dl/dt „ (dv/dt)w 45-C; > GC
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VHF36
36-12io5
36-16io5
00031Q7
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PDF
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Untitled
Abstract: No abstract text available
Text: n iyyq U lA . X O Half Controlled VHF15 Single Phase Rectifier Bridges with freewheeling Diode v RRM v DRM v RSM v OSM V V 900 1300 1500 1700 800 1200 1400 1600 vm Q ^FRMS> ^TRMS ^FSM* V sM JPdt Maximum Ratings A A T"vj “ ^VJM VR- 0 V t = 10 ms 50 Hz , sine
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VHF15
VHF15-12io5
15-14io5
00D31D1
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DIAC st4
Abstract: DIAC st2 SC142d SC141 triac st4 diac diac 120 amperes 400 volts GE SC142D SC147B SC142B st2 diac
Text: TRIAC SELECTOR GUIDE TRIAC TRIGG ERS The ST2 diac is a silicon b i-d irectio nal diode which may be used for triggering triacs or SCR’s. It has a three layer structure w ith negative resistance sw itching ch aracteristics in both directions. The ST4 is an asym m etrical AC trig ger integrated circ u it for use in tria c phase control applications. This device
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t0-z02ab
SC116
DIAC st4
DIAC st2
SC142d
SC141 triac
st4 diac
diac 120 amperes 400 volts
GE SC142D
SC147B
SC142B
st2 diac
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GE SC triac
Abstract: st2 diac DIAC st2 GE ST2 GE SC142D st4 diac DIAC st4 DIAC GE ST2 Ge st4 DIAC SC116D
Text: TRIAC SELECTOR GUIDE TRIAC T RIGG ERS The ST2 diac is a silicon b i-d irectio nal diode which may be used for triggering triacs or SCR’s. It has a three layer structure w ith negative resistance sw itching ch aracteristics in both directions. The ST4 is an asym m etrical AC trig ger integrated circ u it for use in tria c phase control applications. This device
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12Vdc,
GE SC triac
st2 diac
DIAC st2
GE ST2
GE SC142D
st4 diac
DIAC st4
DIAC GE ST2
Ge st4 DIAC
SC116D
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laser diode driver circuit automatic power control
Abstract: No abstract text available
Text: * L A S E R DSODE SYNERGY S T 8 8 90 5 C O N T R O L L E R W I T H APC S E M IC O N D U C 1 O B EESCR F EA TU R E S • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Monitor Diode power control circuit ■ Designed for use with SY88902 and SY88903
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SY88903
SY88902
10-pin
SY88905
SY88903
SY88905
laser diode driver circuit automatic power control
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PDF
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SS24 DIODE schottky
Abstract: MIC4684BM C2330 t1b diode SPRAGUE SEMICONDUCTOR GRM42-6 SS24 t1a 68 ss24 diode
Text: Application Hint 40c Micrel Application Hint 40c ±2.5V/0.5A Split Power Supply by Jeff Dixon VIN 4.85V to 30V 3 C1 15 F 35V 8 U1 MIC4684BM VIN BS EN 4 SW 1 FB 5 C5 0.33 F 50V 68 H R1 3.01k D1 2A/40V GND SOP-8 VOUT +2.5V @ 0.5A T1A 2, 6, 7 C2 330 F 6.3V R2
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MIC4684BM
A/40V
594D156X0035D2T
594D337X06R3DT2
SS24 DIODE schottky
MIC4684BM
C2330
t1b diode
SPRAGUE SEMICONDUCTOR
GRM42-6
SS24
t1a 68
ss24 diode
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PART marking d2
Abstract: Schottky Power Rectifier 10A Schottky CZSH10-40CN
Text: CZSH10-40CN SURFACE MOUNT DUAL, COMMON CATHODE SILICON SCHOTTKY POWER RECTIFIER 10 AMP, 40 VOLTS SOT-223C CASE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZSH10-40CN ia a dual common cathode 10 Amp surface mount silicon Schottky rectifier package in a SOT-223C
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CZSH10-40CN
OT-223C
OT-223C
22-July
PART marking d2
Schottky Power Rectifier
10A Schottky
CZSH10-40CN
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VS-40CPQ
Abstract: JEDEC-JESD47 VS-40CPQ100
Text: VS-40CPQ.PbF Series, VS-40CPQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base common cathode 2 • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature
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VS-40CPQ.
O-247AC
2002/95/EC
JEDEC-JESD47
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-40CPQ
JEDEC-JESD47
VS-40CPQ100
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Untitled
Abstract: No abstract text available
Text: LSE D INTERNATIONAL RECTIFIER • 4355452 0017220 2 4 e! H I N R PD-2.308 4 o c p q o 5o International [k ^ J Rectifier 4 o c pq o 6 o SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Description/Features The 40CPQ. center tap Schottky rectifier has been opti
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40CPQ.
40CPQ060
IRFP460
40HFL40S02
D-194
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BUK75
Abstract: BUK752R3-40C
Text: BUK752R3-40C N-channel TrenchMOS standard level FET Rev. 03 — 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been designed
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BUK752R3-40C
BUK752R3-40C
BUK75
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BUK7E2R3-40C
Abstract: BUK75 10S100
Text: BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 — 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been designed
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BUK7E2R3-40C
BUK7E2R3-40C
BUK75
10S100
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40CTQ045L
Abstract: 40HFL40S02 IRFP460
Text: Preliminary Data Sheet PD-20572 11/98 40CTQ045L SCHOTTKY RECTIFIER 40 Amp TO-262 Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 40CTQ.L Units The 40CTQ045L center tap Schottky rectifier series has been optimized for very low forward voltage drop, with moderate
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PD-20572
40CTQ045L
O-262
40CTQ.
40CTQ045L
40HFL40S02
IRFP460
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p035h
Abstract: 40CPQ080 40CPQ100 40HF 100V 20A Schottky Common Anode Diode
Text: Bulletin PD-20675 rev. B 08/04 40CPQ080PbF 40CPQ100PbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 80 -100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 40 A 80/100 V IFSM @ tp = 5 s sine 2950
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PD-20675
40CPQ080PbF
40CPQ100PbF
40Amp
-100V
40CPQ.
O-247
p035h
40CPQ080
40CPQ100
40HF
100V 20A Schottky Common Anode Diode
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.
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BUK762R0-40C
BUK762R0-40C
771-BUK762R0-40C
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20675 rev. B 08/04 40CPQ080PbF 40CPQ100PbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 80 -100V Description/ Features Major Ratings and Characteristics The 40CPQ.PbF center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The
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PD-20675
40CPQ080PbF
40CPQ100PbF
40Amp
-100V
40CPQ.
O-247
O-247
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