BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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Untitled
Abstract: No abstract text available
Text: L L 4151 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 75V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the
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150mA
DO-35
1N4151.
OD-80C)
150OC
100MHz,
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hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
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25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
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BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
MAM139
OD110)
OD110
SCDS47
117021/1100/01/pp8
BA792
top mark smd Philips
Diode smd code 805
SMD MARKING 541 DIODE
279-27
smd diode marking kda
marking code kda
smd code marking 777
smd diode marking 77
S4 SMD diode mark
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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OCR Scan
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF
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M3D178
BA792
MAM139
OD110)
OD110
SCDS47
113061/1100/01/pp8
SMD MARKING 541 DIODE
smd diode 708
BA792
Diode smd code 805
SOD110
S4 SMD diode mark
MCC SMD DIODE
SMD MARK CODE s4
BP317
diode marking code 777
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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OCR Scan
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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marking code k1
Abstract: BAP51-02 smd marking KM
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance
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M3D319
BAP51-02
OD523
MAM405
OD523)
613514/02/pp8
marking code k1
BAP51-02
smd marking KM
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance
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M3D319
BAP63-02
BAP63-02
OD523
OD523)
MAM405
125004/04/pp7
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smd code marking A8 diode
Abstract: smd diode A8 smd diode code a8
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance
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M3D049
BAP50-03
OD323
MAM406
OD323)
125004/00/02/pp8
smd code marking A8 diode
smd diode A8
smd diode code a8
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BAP51-03
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance
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M3D049
BAP51-03
OD323
MAM406
OD323)
115002/03/pp8
BAP51-03
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
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M3D319
1PS79SB10
SC-79
MAM403
SC-79)
SCA60
115104/00/01/pp8
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smd schottky diode marking 72
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
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M3D049
1PS76SB70
OD323
MAM283
OD323)
SCA60
115104/00/01/pp8
smd schottky diode marking 72
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Untitled
Abstract: No abstract text available
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
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C-150
Abstract: IRGIB6B60KD
Text: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427D
IRGIB6B60KD
O-220
O-220
C-150
IRGIB6B60KD
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str 6707
Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Text: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
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M3D177
BAT254
BAT254
OD110
MAM214
OD110)
SCDS48
117021/1100/01/pp8
str 6707
BP317
Diode smd code 805
SMD 2211
smd schottky diode marking 72
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AME41-4096
Abstract: AME41CEAS AME41CEAT AME41CEET AME41FEET AME41FEHA
Text: AME, Inc. Micropower Voltage Reference Diode AME41-4096 n General Description n Key Features The AME41-4096 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 40µA to 20mA current range. Each circuit is trimmed at wafer sort to
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AME41-4096
AME41-4096
OT-23.
OT-23,
2003-DS41-4096-E
AME41CEAS
AME41CEAT
AME41CEET
AME41FEET
AME41FEHA
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transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
Text: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor c 2335
C-150
IRFI840G
IRGIB15B60KD1
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1PS59SB20
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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M3D114
1PS59SB20
SC-59
MLC357
MSA314
SCA60
115104/00/01/pp8
1PS59SB20
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Untitled
Abstract: No abstract text available
Text: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427A
IRGIB6B60KD
O-220
IRFI840G
O-220
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BAS240
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS240 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS240 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.
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M3D154
BAS240
MAM214
OD110)
613514/01/pp8
BAS240
BP317
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transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4599A
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor BR 9013
C-150
IRFI840G
IRGIB15B60KD1
transistor c 2335
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diode 10a 400v
Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
Param99
IRFI840G
O-220
diode 10a 400v
10a 400v bipolar transistor
transistor IRF 630
ultrafast diode 10a 400v
ultrafast swiching transistor
C-150
IRFI840G
IRGIB10B60KD1
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