DIODE 400V 0.5A Search Results

Contextual Info: RD0504T Ordering number : ENA1851A SANYO Semiconductors DATA SHEET RD0504T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • VRRM=400V trr=17ns typ. (IF=0.5A, IR=1A) VF max=1.5V Halogen free compliance • • Specifications

A1851

Abstract: sot428 Part marking
Contextual Info: RD0504T Ordering number : ENA1851 SANYO Semiconductors DATA SHEET RD0504T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • VRRM=400V trr=17ns typ. (IF=0.5A, IR=1A) • • VF max=1.5V Halogen free compliance Specifications

marking TP

Abstract: R0504
Contextual Info: RD0504T Ordering number : ENA1851A SANYO Semiconductors DATA SHEET RD0504T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • VRRM=400V trr=17ns typ. (IF=0.5A, IR=1A) VF max=1.5V Halogen free compliance • • Specifications

S11V

Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Contextual Info: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s

Contextual Info: RECTIFIER, 400V, 1.7A, 50ns January 7, 1998 IPFF4 T E L 8 0 5 -4 9 8 -2 1 11 FAX:805-498-3804 W E B : http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE QUICK REFERENCE DATA • • • • • > • • Ip • trr • Ir 400V

RD2004

Abstract: A1486 RD2004JN
Contextual Info: RD2004JN Ordering number : ENA1486 SANYO Semiconductors DATA SHEET RD2004JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. Fast forward / reverse recovery time.

RD1004

Abstract: a1615 RD1004LS-SB5 rd1004ls RD1004LS-SB
Contextual Info: RD1004LS-SB5 Ordering number : ENA1615 SANYO Semiconductors DATA SHEET RD1004LS-SB5 Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. Easy to be mounted, good heat dissipation.

TSC5302D

Abstract: TSC5302DCH TSC5302DCP
Contextual Info: Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 800V Ic = 2A VCE SAT , = 1.0V @ Ic / Ib = 1A / 0.2A Features Ordering Information Built-in free-wheeling diode makes efficient anti

TSC5304D

Abstract: power transistor Ic 4A NPN to - 251 TSC5304DCH TSC5304DCP TS530 NPN Transistor 10A 400V TSC5304 ic 565 pin diagram
Contextual Info: Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti

5210 diode

Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

RD2004

Abstract: RD2004JS-SB ENA1895 TC-00002483 A1895
Contextual Info: RD2004JS-SB Ordering number : ENA1895 SANYO Semiconductors DATA SHEET RD2004JS-SB Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • VF=1.5V max. IF=20A VRRM=400V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: IDIOTI i s t i RECTIFIER, 400V, 2.1 A, 50ns January 7, 1998 2IPFF4 TE L805-498-2111 FAX:805-498-3804 W E B :http://w w w .sem tech.com Q UICK REFERENCE DATA A XIA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE 400V If = 2.1 A trr = 50nS Very low reverse recovery tim e

Contextual Info: Ordering number : ENN7034 DSH05 Diffused Type Silicon Diode DSH05 0.5A Power Rectifier Features • Facilitates automatic mounting and miniaturization in end products. Peak reverse voltage : VRM=400V. Average rectified current : IO=0.5A. unit : mm 1312 [DSH05]

DSH05

Contextual Info: Ordering number : ENN7034 DSH05 Diffused Type Silicon Diode DSH05 0.5A Power Rectifier Features • Facilitates automatic mounting and miniaturization in end products. Peak reverse voltage : VRM=400V. Average rectified current : IO=0.5A. unit : mm 1312 [DSH05]

TSC5304ED

Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

A1270

Abstract: transistor A1270 RD2004 A1270 transistor datasheet RD2004LN A-1270 a1270* transistor
Contextual Info: RD2004LN Ordering number : ENA1270A SANYO Semiconductors DATA SHEET RD2004LN Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

pin diagram of ic 4440

Abstract: IC 0116 DC TSC5305D TSC5305DCM TSC5305DCZ ic 4440 transistor Vceo 400V, Vebo 9v, Ic 10A
Contextual Info: Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 5A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti

D 92 M 03 DIODE

Abstract: NPN Transistor 1A 400V TSC5301D "NPN Transistor"
Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

TRANSISTOR L 043 A

Abstract: diode 400v 0.5a TSC5301D transistor case To 92 NPN Transistor 1A 400V
Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

RD2004

Contextual Info: RD2004LS-SB5 Ordering number : ENA1612 SANYO Semiconductors DATA SHEET RD2004LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

NPN Transistor 1A 400V

Abstract: e07 mARking NPN transistor NPN TO92 400V transistor case To 92 "NPN Transistor"
Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features  1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

TSC5304D

Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation