DIODE 3L2 Search Results

marking 3L2 diode

Abstract: DIODE 3L2 3L2 diode i0633
Contextual Info: Super Fast Recovery Diode Single Diode Wtm D3L20U OUTLINE 2 0 0 V 2 .5 A Feature • Low Noise • trr=35ns • Full Molded • m s 'ix • trr=35ns • y iæ - ju k Main Use • • • • • ÌM .0 A J M 3 • a f f l- F A Switching Regulator Fly Wheel

d3l20u

Contextual Info: □— m im K U type Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S D3L20U 200V 2.5A • 5Ë»* R A TIN G S Absolute Maximum Ratings m s se# Symbol Item Y/" tm S to ra g e Tem perature - a r A .S l S J ± Maximum R everse V oltage

RB053L-30

Contextual Info: Schottky barrier diode Silicon Epitaxial Planer RB063L-30 Limits Reverse voltage (repetitive peak) VRM 30V Reverse voltage (DC) VR IO* 30V IFSM 70A Average rectified forward current Forward current surge peak (60Hz: ) DIMENSION (UNIT:mm) CATHODE MARK 1.5±0.2

1xys

Abstract: D-6840 D6840 VB035-08N04 VB024-08N04 VB035-04N04 VB010 VB015-10N04 VB035 VB024-04N04
Contextual Info: 4b E D • I X Y S Mbflb25b D00127S 1 «IXY CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Sheet No. 911014A November 1991 VB006 VB015 VB035 Single-Phase Diode Rectifier Bridge VB010 VB024 • C om pact Housing

QS3L383

Contextual Info: QS3L383, QS3L2383 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed Low Power 10-Bit Bus Exchange Switches QS3L383 QS3L2383 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

QS3L384

Abstract: QS3L2384
Contextual Info: QuickSwitch Products qs3L384 High-Speed, Low Power qs3L2384 CMOS 10-Bit Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • bidirectional switches connect inputs to outputs • Zero propagation delay QS3L384 ;

QS3L2384

Abstract: QS3L384 B9 fet datasheet
Contextual Info: QS3L384, QS3L2384 QuickSwitch Products High-Speed, Low Power CMOS 10-Bit Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS3L384 QS3L2384 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

QS3L2384

Contextual Info: IDTQS3L2384 HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS EXCHANGE SWITCH DESCRIPTION: FEATURES: Enhanced N channel FET with no inherent diode to Vcc Low propagation delay, zero ground bounce

QS3L2384

Abstract: SO24-2
Contextual Info: IDTQS3L2384 HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc

QS3L384

Abstract: QS3L2384
Contextual Info: QuickSwitch Products & C T O U N C . High-Speed, Low Power CMOS 10-Bit Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5£2 bidirectional switches connect inputs to outputs • Zero propagation delay QS3L384 ;

PS2533

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2533-1 ,-2,-4, PS2533L-1 ,-2,-4 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION The P S2533-1, -2, -4 and P S2533L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

PS20A

Contextual Info: GB Semiconductor, Inc Q u ic k S w itc h P ro d u c ts q s 3L383 High-Speed Low Power qs3L2383 11W * P«S E x c h a n g e Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5Q. bidirectional switches connect inputs

transistor 3l2

Contextual Info: DATA SHEET PHOTOCOUPLER PS2533-1 ,-2,-4,PS2533L-1 ,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES DESCRIPTION T he P S 2533-1, -2, -4 and P S 2 533 L-1 , -2, -4 are o p tica lly c o u p le d iso lato rs con ta in in g a G aA s light em ittin g diode

S3L384Q

Abstract: S3L384 QS3L384 QS3L2384
Contextual Info: ÖUALITY SE MI CON DUCTOR INC bSE D QS3L384, Q • 74bb003 OQDlMlb «=137 QS3L2384 Q S 3L384 Q S 3L2384 High Speed, Low Power CMOS10-bit Bus Switches FEATURES/BENEFITS • 5£2 switches connect inputs to outputs • Direct bus connection when switches on • Zero propagation delay 3L384

Contextual Info: Q u ic k S w itc h P ro d u c ts High-Speed, Low Power % .1« . q s 3L384 qs 3L2384 C » O S '» ’ I» ' ßus Switches FEATURES/BENEFITS DESCRIPTION • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs

transistor 3l2

Contextual Info: fOMdZOT KD224503 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D d fH n C jtO n Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed tor use

Contextual Info: 1.8mm RIGHT ANGLE LED INDICATORS Kingbright L-2060NA/3 Package Dimensions Features lTRI-LEVEL DESIGN. lDIFFERENT COLOR COMBINATION AVAILABLE. l BLACK CASE ENHANCES CONTRAST RATIO. l HIGH RELIABILITY LIFE MEASURED IN YEARS. Description The Green source color devices are made with Gallium

DIODE 3L2

Abstract: Complementary MOSFET Half Bridge
Contextual Info: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to

ior e78996

Abstract: IRFK3D450 e78996 india IRFK3F450
Contextual Info: Bulletin E27100 International Iiqr IRectifier IRFK3D450,IRFK3F450 Isolated Base Power HEX-pak Assem bly - Half Bridge Configuration • • • ■ High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.

SMD marking code B21 diode

Abstract: SMD MARKING CODE b21 SMD diode W03 SMD W05 smd diode Coloured band marking code S 4.2B diode smd diode smd marking BBB SMD W05 77 DIODE smd marking Ak DT80
Contextual Info: rZ J £ SGS-THOM SON iM M i[L Œ « Q M (ê § T P U x x /S M T H D T x x TRISIL DISCRETE SOLUTION FOR ISDN PROTECTION FEATURES . UNDIRECTIONAL CROWBAR PROTECTION. • PEAK PULSE CURRENT : Ipp = 7 5 A , 1 0 /1 0 0 0 jis . ■ HOLDING CURRENT = 150mA. ■ BREAKDOWN VOLTAGE:

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

S3L38

Abstract: 2/3L384
Contextual Info: QS3L384, QS3L2384 Q S3L384 Q S3L2384 High Speed, Low Power CMOS10-bit Bus Switches Q FEATURES/BENEFITS • • • • • 5i2 switches connect inputs to outputs Direct bus connection when switches on Zero propagation delay 3L384 Undershoot Clamp diodes on all inputs

QS3L384

Abstract: QS3L2384
Contextual Info: QS3L384, Q QS3L2384 QS3L384 QS3L2384 High Speed, Low Power CMOS10-bit Bus Switches FEATURES/BENEFITS * 5 ii switches connect inputs to outputs * Direct bus connection when switches on • Zero propagation delay 3L384 • Undershoot Clamp diodes on all inputs

thyristor st 103

Abstract: MCR-SL-S-1/thyristor st 103
Contextual Info: J.5E D SEMIKRON INC I fll3W,?l GÜOm'iB O I -p a s ^ V drm Itrms maximum values for continuous operation tq 110 A (Tvj V rrm 125 C) V SKFT 40/08 DS 15 20 25 1000 - 40/08 DU 40/10 DT 40/10 DU 40/12 DT 40/12 DU - 20 25 20 25 25 1200 1400 130 A 130 A 110 A