DIODE 3J Search Results

Contextual Info: DATA SHEET_ LASER DIODE NDL7408P Series 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER DESCRIPTION NDL7408P Series is a 1 310 nm laser diode coaxial module with single mode fiber. Quantum Well st-MQW structure and a built-in InGaAs monitor photo diode.

NEC LASER DIODE butterfly package

Contextual Info: PRELIMINARY DATA SHEET_ NEC LASER DIODE MODULE NDL7540P 1480 nm OPTICAL FIBER APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE FEATURES • InGaAsP Strained M Q W DC-PBH laser diode • H igh output power Pf=110mW @ !F=500m A CW • Internal optical isolator, therm o electric cooler and m onitor photo diode

Contextual Info: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEA TU R ES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages

311D

Abstract: bup 311d
Contextual Info: BUP 311D Infineon IGBT With Antiparallel Diode Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Type VCE IC BUP 311D 1200V A

bup 311d

Abstract: 311d BUP311D May-06-1999
Contextual Info: BUP 311D IGBT With Antiparallel Diode Preliminary data sheet • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Former Development ID: BUP 3JKD Type VCE IC BUP 311D 1200V A Pin 1

DIODE 3J

Abstract: RB706F-40
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 RB706F-40 Schottky Diode 1. ANODE 2. CATHODE FEATURES z Small package z Low VF and low IR. z High reliability. 3. C,A MAKING: 3J• Maximum Ratings @TA=25℃ Parameter

12G2

Abstract: 12T2
Contextual Info: I2f2 A b OHHOH flH O A -TpH O fl Double diode-triode The 12T2 double diode-triode is designed for low-frequency detection and pre-amplification. The 12T2 double diode-triodes are enclosed in JlBO H H bie ÄHOA-TpHOÄbi 1 2 F 2 BbinycKafOTCH b metal case and are provided with an octal base

FS75R12W2T4

Contextual Info: Technische Information / technical information FS75R12W2T4_B11 IGBT-Module IGBT-modules EasyPACK 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPACK 2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode

FF300R06ME3

Abstract: e43a
Contextual Info: Technische Information / technical information FF300R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode EconoDUAL™2 module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT-Wechselrichter / IGBT-inverter

OW43

Abstract: DF900R12IP4D u 1620 DF900 2n67 667 2N
Contextual Info: Technische Information / technical information DF900R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode

FF225R12ME4

Contextual Info: Technische Information / technical information FF225R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter

DIN 16901 130

Abstract: FS150R12KE3G DIN 16901 140 DO6a DIN 16901 150 DIN 16901
Contextual Info: Technische Information / technical information FS150R12KE3G IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

fs150r12ke3g

Contextual Info: Technische Information / technical information FS150R12KE3G IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

FP35R12KT4

Abstract: 32L0 IR 50H
Contextual Info: Technische Information / technical information FP35R12KT4_B11 IGBT-Module IGBT-modules EconoPIM 2 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™2 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter

fs150r12kt3

Contextual Info: Technische Information / technical information FS150R12KT3 IGBT-Module IGBT-modules EconoPACK 3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

FF200R12KT3

Contextual Info: Technische Information / technical information FF200R12KT3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und EmCon High Efficiency Diode 62mm C-series module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

FS150R12KT3

Contextual Info: Technische Information / technical information FS150R12KT3 IGBT-Module IGBT-modules EconoPACK 3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

W16 sot 23

Abstract: W16 marking code sot 23 CMPZDA33V dual zener dual zener common anode MARKING CODE R7 DIODE diode zener marking 58 marking w13 marking codes ON w16 marking code
Contextual Info: Central CMPZDA2V4 THRU CMPZDA47V TM Semiconductor Corp. SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 350mW DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZDA2V4 Series silicon dual zener diode is a high quality voltage regulator, connected in a

LTC4098-3.6

Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense

ifs75b12n3e4_b32

Contextual Info: Technische Information / technical information IFS75B12N3E4_B32 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense

FP35R12KT4

Contextual Info: Technische Information / technical information FP35R12KT4 IGBT-Module IGBT-modules EconoPIM 2 Modul mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™2 module with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

DIN 16901 130

Abstract: DIN 16901 140 DIN 16901 ISO 2768 fK FS225R12KE4 DIN ISO 2768-M
Contextual Info: Technische Information / technical information FS225R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

Contextual Info: Technische Information / technical information BSM300GA120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values