DIODE 3A1 Search Results

ST T4 3660

Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
Contextual Info: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in

Contextual Info: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in

CZRB3009-G

Abstract: CZRB3005-G 3b3 smd zener diode 330 marking diode 3A1 zener diode smd 3F7 marking code 3B6 ,zener DIODE smd color marking Zener diode smd marking code 63 3F6 smd
Contextual Info: Comchip SMD Zener Diode SMD Diode Specialist CZRB3005-G Thru CZRB3200-G Voltage: 6.2 to 200 Volts Power: 3 Watts RoHS Device Features DO-214AA SMB -Glass passivated chip -Low leakage 0.191 (4.85) 0.171 (4.35) -Built-in strain telief -Low inductance -High peak reverse power dissipation

SMD zener diode 7.5 b

Abstract: smd zener diode color code zener DIODE smd color marking ,zener DIODE smd color marking zener diode 8.2 v smd SMD DO-213 ZENER DIODE zener 3B2 marking code 3B6 Diode zener smd 152 Zener diode smd marking code 63
Contextual Info: Comchip SMD Zener Diode SMD Diode Specialist CZRB3005-G Thru CZRB3200-G Voltage: 6.2 to 200 Volts Power: 3 Watts RoHS Device Features DO-214AA SMB -Glass passivated chip -Low leakage 0.191 (4.85) 0.171 (4.35) -Built-in strain telief -Low inductance -High peak reverse power dissipation

IDTQS3VH16244

Abstract: QS3VH16244
Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH IDTQS3VH16244 PRELIMINARY FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

IDTQS3VH16244

Abstract: QS3VH16244
Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16244 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

ST T4 3660

Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Contextual Info: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast

5a1 DIODE

Abstract: 8A2 DIODE QS316209 QS3162209
Contextual Info: QS316209, QS3162209 QuickSwitch Products High-Speed CMOS 18-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316209 QS3162209 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

1Bn-12Bn

Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
Contextual Info: QS316212, QS3162212 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316212 QS3162212 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

AIC2351

Abstract: AIC2351GV5 GN15G GN33G 2351G 1. EN 2. GND 3. VOUT 4. VIN 5. FB SOT-23-5 AIC2351-33GV5TR AIC2351GV5TR l22f AIC235
Contextual Info: AIC2351 Low-Noise Synchronous PWM/PFM Step-Down DC/DC Converter FEATURES DESCRIPTION 2.5V to 5.5V Input Voltage Range 600mA Guaranteed Output Current 95% Efficiency No Schottky Diode Required 30µA Low Quiescent Current 100% Duty Cycle in Low Dropout Operation

Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

.xa2

Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

Contextual Info: S101S16V Series S101S16V Series IT rms ≤3A, Built-in snubber circuit Zero Cross type SIP 4pin Triac output SSR • Description ■ Agency approvals/Compliance S101S16V Series Solid State Relays (SSR) are an integration of an infrared emitting diode (IRED), a

LR63705

Abstract: S101S16F S101S16V infra-red distance measurement
Contextual Info: S101S16V Series S101S16V Series IT rms ≤3A, Built-in snubber circuit Zero Cross type SIP 4pin Triac output SSR • Description ■ Agency approvals/Compliance S101S16V Series Solid State Relays (SSR) are an integration of an infrared emitting diode (IRED), a

10A1

Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

10A1

Abstract: 10A2 10B1 11A1 11A2 12A1 12A2 SN74CBTS16213
Contextual Info: SN74CBTS16213 24-BIT FET BUS-EXCHANGE SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS051B – MARCH 1998 – REVISED NOVEMBER 1998 DGG OR DL PACKAGE TOP VIEW 5-Ω Switch Connection Between Two Ports TTL-Compatible Input Levels Package Options Include Plastic Thin

10A1

Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

SO56-2

Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
Contextual Info: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay

.xa2

Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

10A1

Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Contextual Info: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 PRELIMINARY FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

Contextual Info: IDTQS3VH16244 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH IDTQS3VH16244 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc − Isolation under power-off conditions

3A2 zener diode

Abstract: zener 3a2 a51 ZENER DIODE Diode zener 3a A43 ZENER DIODE a51 zener ZENER A43 3a20 DAM3A18 Zener Diode 3A2
Contextual Info: SURGE SUPPRESSOR DIODE DAM3A OUTLINE DRAWING Unit in mm inch 7.5 (0.295) φ 1.2 (0.047) Type mark (Red) 27CA 26MIN. (1.02) 59MIN. (2.32) 26MIN. (1.02) Direction of polarity Cathode band (Red) • High transient reverse power capability suitable for protecting automobile electronic

irf 3250

Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
Contextual Info: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter